Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
APT5010JVFR

APT5010JVFR

MOSFET N-CH 500V 44A ISOTOP

Microchip Technology
2,154 -

RFQ

APT5010JVFR

Ficha técnica

Tube POWER MOS V® Active N-Channel MOSFET (Metal Oxide) 500 V 44A (Tc) - 100mOhm @ 500mA, 10V 4V @ 2.5mA 470 nC @ 10 V - 8900 pF @ 25 V - - - Chassis Mount
APT8030JVFR

APT8030JVFR

MOSFET N-CH 800V 25A ISOTOP

Microchip Technology
3,383 -

RFQ

APT8030JVFR

Ficha técnica

Tube POWER MOS V® Active N-Channel MOSFET (Metal Oxide) 800 V 25A (Tc) - 300mOhm @ 500mA, 10V 4V @ 2.5mA 510 nC @ 10 V - 7900 pF @ 25 V - - - Chassis Mount
MSCSM120SKM31CTBL1NG

MSCSM120SKM31CTBL1NG

PM-MOSFET-SIC-SBD-BL1

Microchip Technology
3,000 -

RFQ

Bulk - Active N-Channel SiCFET (Silicon Carbide) 1200 V 79A 20V 31mOhm @ 40A, 20V 2.8V @ 1mA 232 nC @ 20 V +25V, -10V 3020 pF @ 1000 V - 310W -55°C ~ 175°C (TJ) Chassis Mount
MSC015SMA070B

MSC015SMA070B

SICFET N-CH 700V 131A TO247-3

Microchip Technology
289 -

RFQ

MSC015SMA070B

Ficha técnica

Tube - Active N-Channel SiCFET (Silicon Carbide) 700 V 131A (Tc) 20V 19mOhm @ 40A, 20V 2.4V @ 1mA 215 nC @ 20 V +25V, -10V 4500 pF @ 700 V - 400W (Tc) -55°C ~ 175°C (TJ) Through Hole
MSC025SMA120B

MSC025SMA120B

SICFET N-CH 1.2KV 103A TO247-3

Microchip Technology
399 -

RFQ

MSC025SMA120B

Ficha técnica

Tube - Active N-Channel SiCFET (Silicon Carbide) 1200 V 103A (Tc) 20V 31mOhm @ 40A, 20V 2.8V @ 1mA 232 nC @ 20 V +25V, -10V 3020 pF @ 1000 V - 500W (Tc) -55°C ~ 175°C (TJ) Through Hole
MSC025SMA120J

MSC025SMA120J

SICFET N-CH 1.2KV 77A SOT227

Microchip Technology
404 -

RFQ

MSC025SMA120J

Ficha técnica

Tube - Active N-Channel SiCFET (Silicon Carbide) 1200 V 77A (Tc) 20V 31mOhm @ 40A, 20V 2.8V @ 1mA 232 nC @ 20 V +25V, -10V 3020 pF @ 1000 V - 278W (Tc) -55°C ~ 175°C (TJ) Chassis Mount
APL502J

APL502J

MOSFET N-CH 500V 52A ISOTOP

Microchip Technology
191 -

RFQ

APL502J

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 52A (Tc) 15V 90mOhm @ 26A, 12V 4V @ 2.5mA - ±30V 9000 pF @ 25 V - 568W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
MIC94031CYW

MIC94031CYW

MOSFET P-CH 16V 1A

Microchip Technology
3,289 -

RFQ

Tape & Reel (TR) TinyFET® Obsolete P-Channel MOSFET (Metal Oxide) 16 V 1A (Ta) - 450mOhm @ 100mA, 10V 1.4V @ 250µA - - - - 568mW (Ta) -55°C ~ 150°C (TJ) -
APT1001R1BN

APT1001R1BN

MOSFET N-CH 1000V 10.5A TO247AD

Microchip Technology
2,090 -

RFQ

APT1001R1BN

Ficha técnica

Tube POWER MOS IV® Obsolete N-Channel MOSFET (Metal Oxide) 1000 V 10.5A (Tc) 10V 1.1Ohm @ 5.25A, 10V 4V @ 1mA 130 nC @ 10 V ±30V 2950 pF @ 25 V - 310W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT1001RBN

APT1001RBN

MOSFET N-CH 1000V 11A TO247AD

Microchip Technology
2,429 -

RFQ

APT1001RBN

Ficha técnica

Tube POWER MOS IV® Obsolete N-Channel MOSFET (Metal Oxide) 1000 V 11A (Tc) 10V 1Ohm @ 5.5A, 10V 4V @ 1mA 130 nC @ 10 V ±30V 2950 pF @ 25 V - 310W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT5020BN

APT5020BN

MOSFET N-CH 500V 28A TO247AD

Microchip Technology
2,066 -

RFQ

APT5020BN

Ficha técnica

Tube POWER MOS IV® Obsolete N-Channel MOSFET (Metal Oxide) 500 V 28A (Tc) 10V 200mOhm @ 14A, 10V 4V @ 1mA 210 nC @ 10 V ±30V 3500 pF @ 25 V - 360W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT5020BNFR

APT5020BNFR

MOSFET N-CH 500V 28A TO247AD

Microchip Technology
3,582 -

RFQ

Tube POWER MOS IV® Obsolete N-Channel MOSFET (Metal Oxide) 500 V 28A (Tc) 10V 200mOhm @ 14A, 10V 4V @ 1mA 210 nC @ 10 V ±30V 3500 pF @ 25 V - 360W (Tc) -55°C ~ 150°C (TJ) Through Hole
TN2130K1-G

TN2130K1-G

MOSFET N-CH 300V 85MA TO236AB

Microchip Technology
4,592 -

RFQ

TN2130K1-G

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 300 V 85mA (Tj) 4.5V 25Ohm @ 120mA, 4.5V 2.4V @ 1mA - ±20V 50 pF @ 25 V - 360mW (Tc) -55°C ~ 150°C (TJ) Surface Mount
MIC94050YM4-TR

MIC94050YM4-TR

MOSFET P-CH 6V 1.8A SOT-143

Microchip Technology
15,160 -

RFQ

MIC94050YM4-TR

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) SymFET™ Active P-Channel MOSFET (Metal Oxide) 6 V 1.8A (Ta) 1.8V, 4.5V 160mOhm @ 100mA, 4.5V 1.2V @ 250µA - 6V 600 pF @ 5.5 V - 568mW (Ta) -40°C ~ 150°C (TJ) Surface Mount
2N7008-G

2N7008-G

MOSFET N-CH 60V 230MA TO92-3

Microchip Technology
2,298 -

RFQ

2N7008-G

Ficha técnica

Bag - Active N-Channel MOSFET (Metal Oxide) 60 V 230mA (Tj) 5V, 10V 7.5Ohm @ 500mA, 10V 2.5V @ 250µA - ±30V 50 pF @ 25 V - 1W (Tc) -55°C ~ 150°C (TJ) Through Hole
TN2106N3-G

TN2106N3-G

MOSFET N-CH 60V 300MA TO92-3

Microchip Technology
1,300 -

RFQ

TN2106N3-G

Ficha técnica

Bag - Active N-Channel MOSFET (Metal Oxide) 60 V 300mA (Tj) 4.5V, 10V 2.5Ohm @ 500mA, 10V 2V @ 1mA - ±20V 50 pF @ 25 V - 740mW (Tc) -55°C ~ 150°C (TJ) Through Hole
DN2535N3-G

DN2535N3-G

MOSFET N-CH 350V 120MA TO92

Microchip Technology
1,430 -

RFQ

DN2535N3-G

Ficha técnica

Bag - Active N-Channel MOSFET (Metal Oxide) 350 V 120mA (Tj) 0V 25Ohm @ 120mA, 0V - - ±20V 300 pF @ 25 V Depletion Mode 1W (Tc) -55°C ~ 150°C (TJ) Through Hole
DN2540N3-G

DN2540N3-G

MOSFET N-CH 400V 120MA TO92

Microchip Technology
1,760 -

RFQ

DN2540N3-G

Ficha técnica

Bag - Active N-Channel MOSFET (Metal Oxide) 400 V 120mA (Tj) 0V 25Ohm @ 120mA, 0V - - ±20V 300 pF @ 25 V Depletion Mode 1W (Tc) -55°C ~ 150°C (TJ) Through Hole
VN2450N8-G

VN2450N8-G

MOSFET N-CH 500V 250MA TO243AA

Microchip Technology
17,880 -

RFQ

VN2450N8-G

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 500 V 250mA (Tj) 4.5V, 10V 13Ohm @ 400mA, 10V 4V @ 1mA - ±20V 150 pF @ 25 V - 1.6W (Ta) -55°C ~ 150°C (TJ) Surface Mount
TN0702N3-G

TN0702N3-G

MOSFET N-CH 20V 530MA TO92-3

Microchip Technology
6,557 -

RFQ

TN0702N3-G

Ficha técnica

Bag - Active N-Channel MOSFET (Metal Oxide) 20 V 530mA (Tj) 2V, 5V 1.3Ohm @ 500mA, 5V 1V @ 1mA - ±20V 200 pF @ 20 V - 1W (Tc) -55°C ~ 150°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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