Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
VN2210N3-G

VN2210N3-G

MOSFET N-CH 100V 1.2A TO92-3

Microchip Technology
2,077 -

RFQ

VN2210N3-G

Ficha técnica

Bag - Active N-Channel MOSFET (Metal Oxide) 100 V 1.2A (Tj) 5V, 10V 350mOhm @ 4A, 10V 2.4V @ 10mA - ±20V 500 pF @ 25 V - 740mW (Tc) -55°C ~ 150°C (TJ) Through Hole
DN3765K4-G

DN3765K4-G

MOSFET N-CH 650V 300MA TO252-3

Microchip Technology
2,236 -

RFQ

DN3765K4-G

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 650 V 300mA (Tj) 0V 8Ohm @ 150mA, 0V - - ±20V 825 pF @ 25 V Depletion Mode 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
APT24F50B

APT24F50B

MOSFET N-CH 500V 24A TO247

Microchip Technology
2,248 -

RFQ

APT24F50B

Ficha técnica

Tube POWER MOS 8™ Active N-Channel MOSFET (Metal Oxide) 500 V 24A (Tc) 10V 240mOhm @ 11A, 10V 5V @ 1mA 90 nC @ 10 V ±30V 3630 pF @ 25 V - 335W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT7M120B

APT7M120B

MOSFET N-CH 1200V 8A TO247

Microchip Technology
2,659 -

RFQ

APT7M120B

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 1200 V 8A (Tc) 10V 2.5Ohm @ 3A, 10V 5V @ 1mA 80 nC @ 10 V ±30V 2565 pF @ 25 V - 335W (Tc) -55°C ~ 150°C (TJ) Through Hole
MSC750SMA170B4

MSC750SMA170B4

TRANS SJT 1700V TO247-4

Microchip Technology
3,603 -

RFQ

MSC750SMA170B4

Ficha técnica

Tube - Active N-Channel SiCFET (Silicon Carbide) 1700 V 7A (Tc) 20V 940mOhm @ 2.5A, 20V 3.25V @ 100µA (Typ) 11 nC @ 20 V +23V, -10V 184 pF @ 1360 V - 68W (Tc) -55°C ~ 175°C (TJ) Through Hole
MSC750SMA170S

MSC750SMA170S

TRANS SJT 1700V D3PAK

Microchip Technology
3,368 -

RFQ

MSC750SMA170S

Ficha técnica

Tube - Active - SiCFET (Silicon Carbide) 1700 V 6A (Tc) - - - - - - - - - Surface Mount
APT42F50B

APT42F50B

MOSFET N-CH 500V 42A TO247

Microchip Technology
3,465 -

RFQ

APT42F50B

Ficha técnica

Tube POWER MOS 8™ Active N-Channel MOSFET (Metal Oxide) 500 V 42A (Tc) 10V 130mOhm @ 21A, 10V 5V @ 1mA 170 nC @ 10 V ±30V 6810 pF @ 25 V - 625W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT106N60B2C6

APT106N60B2C6

MOSFET N-CH 600V 106A T-MAX

Microchip Technology
2,325 -

RFQ

APT106N60B2C6

Ficha técnica

Tube CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 106A (Tc) 10V 35mOhm @ 53A, 10V 3.5V @ 3.4mA 308 nC @ 10 V ±20V 8390 pF @ 25 V - 833W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT10090BLLG

APT10090BLLG

MOSFET N-CH 1000V 12A TO247

Microchip Technology
2,748 -

RFQ

APT10090BLLG

Ficha técnica

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 1000 V 12A (Tc) 10V 950mOhm @ 6A, 10V 5V @ 1mA 71 nC @ 10 V ±30V 1969 pF @ 25 V - 298W (Tc) -55°C ~ 150°C (TJ) Through Hole
MSC040SMA120B

MSC040SMA120B

SICFET N-CH 1200V 66A TO247-3

Microchip Technology
3,366 -

RFQ

MSC040SMA120B

Ficha técnica

Tube - Active N-Channel SiCFET (Silicon Carbide) 1200 V 66A (Tc) 20V 50mOhm @ 40A, 20V 2.7V @ 2mA 137 nC @ 20 V +23V, -10V 1990 pF @ 1000 V - 323W (Tc) -55°C ~ 175°C (TJ) Through Hole
MSC040SMA120B4

MSC040SMA120B4

SICFET N-CH 1200V 66A TO247-4

Microchip Technology
154 -

RFQ

MSC040SMA120B4

Ficha técnica

Tube - Active N-Channel SiCFET (Silicon Carbide) 1200 V 66A (Tc) 20V 50mOhm @ 40A, 20V 2.6V @ 2mA 137 nC @ 20 V +23V, -10V 1990 pF @ 1000 V - 323W (Tc) -55°C ~ 175°C (TJ) Through Hole
MSC080SMA120J

MSC080SMA120J

SICFET N-CH 1.2KV 35A SOT227

Microchip Technology
3,718 -

RFQ

MSC080SMA120J

Ficha técnica

Tube - Active N-Channel SiCFET (Silicon Carbide) 1200 V 37A (Tc) - - - - - - - - -55°C ~ 175°C (TJ) Chassis Mount
MSC400SMA330B4

MSC400SMA330B4

MOSFET SIC 3300 V 400 MOHM TO-24

Microchip Technology
2,390 -

RFQ

Bulk - Active N-Channel SiCFET (Silicon Carbide) 3300 V 11A (Tc) 20V 520mOhm @ 5A, 20V 2.97V @ 1mA 37 nC @ 20 V +23V, -10V 579 pF @ 2400 V - 131W (Tc) -55°C ~ 150°C (TJ) Through Hole
MSC035SMA170B4

MSC035SMA170B4

MOSFET SIC 1700V 35 MOHM TO-247-

Microchip Technology
2,620 -

RFQ

MSC035SMA170B4

Ficha técnica

Bulk - Active N-Channel SiCFET (Silicon Carbide) 1700 V 68A (Tc) 20V 45mOhm @ 30A, 20V 3.25V @ 2.5mA (Typ) 178 nC @ 20 V +23V, -10V 3300 pF @ 1000 V - 370W (Tc) -55°C ~ 175°C (TJ) Through Hole
MSC035SMA170B

MSC035SMA170B

TRANS SJT 1700V TO247

Microchip Technology
3,268 -

RFQ

MSC035SMA170B

Ficha técnica

Tube - Active N-Channel SiCFET (Silicon Carbide) 1700 V 68A (Tc) 20V 45mOhm @ 30A, 20V 3.25V @ 2.5mA (Typ) 178 nC @ 20 V +23V, -10V 3300 pF @ 1000 V - 370W (Tc) -60°C ~ 175°C (TJ) Through Hole
APT40M70JVR

APT40M70JVR

MOSFET N-CH 400V 53A SOT227

Microchip Technology
3,908 -

RFQ

Tube POWER MOS V® Active N-Channel MOSFET (Metal Oxide) 400 V 53A (Tc) 10V 70mOhm @ 26.5A, 10V 4V @ 2.5mA 495 nC @ 10 V ±30V 8890 pF @ 25 V - 450W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
APT41F100J

APT41F100J

MOSFET N-CH 1000V 42A ISOTOP

Microchip Technology
3,790 -

RFQ

APT41F100J

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 1000 V 42A (Tc) 10V 210mOhm @ 33A, 10V 5V @ 5mA 570 nC @ 10 V ±30V 18500 pF @ 25 V - 960W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
APT29F100B2

APT29F100B2

MOSFET N-CH 1000V 30A T-MAX

Microchip Technology
3,011 -

RFQ

APT29F100B2

Ficha técnica

Tube POWER MOS 8™ Active N-Channel MOSFET (Metal Oxide) 1000 V 30A (Tc) 10V 440mOhm @ 16A, 10V 5V @ 2.5mA 260 nC @ 10 V ±30V 8500 pF @ 25 V - 1040W (Tc) -55°C ~ 150°C (TJ) Through Hole
MSC080SMA330B4

MSC080SMA330B4

MOSFET SIC 3300 V 80 MOHM TO-247

Microchip Technology
3,886 -

RFQ

Bulk - Active N-Channel SiCFET (Silicon Carbide) 3300 V 41A (Tc) 20V 105mOhm @ 30A, 20V 2.97V @ 3mA 55 nC @ 20 V +23V, -10V 3462 pF @ 2400 V - 381W (Tc) -55°C ~ 150°C (TJ) Through Hole
APTM100UM45DAG

APTM100UM45DAG

MOSFET N-CH 1000V 215A SP6

Microchip Technology
3,566 -

RFQ

APTM100UM45DAG

Ficha técnica

Bulk POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 1000 V 215A (Tc) 10V 52mOhm @ 107.5A, 10V 5V @ 30mA 1602 nC @ 10 V ±30V 42700 pF @ 25 V - 5000W (Tc) -40°C ~ 150°C (TJ) Chassis Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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