Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
TN5335K1-G

TN5335K1-G

MOSFET N-CH 350V 110MA SOT23

Microchip Technology
3,328 -

RFQ

TN5335K1-G

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 350 V 110mA (Tj) 3V, 10V 15Ohm @ 200mA, 10V 2V @ 1mA - ±20V 110 pF @ 25 V - 360mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
TP2104N3-G

TP2104N3-G

MOSFET P-CH 40V 175MA TO92-3

Microchip Technology
2,779 -

RFQ

TP2104N3-G

Ficha técnica

Bag - Active P-Channel MOSFET (Metal Oxide) 40 V 175mA (Tj) 4.5V, 10V 6Ohm @ 500mA, 10V 2V @ 1mA - ±20V 60 pF @ 25 V - 740mW (Ta) -55°C ~ 150°C (TJ) Through Hole
VN0106N3-G

VN0106N3-G

MOSFET N-CH 60V 350MA TO92-3

Microchip Technology
2,570 -

RFQ

VN0106N3-G

Ficha técnica

Bag - Active N-Channel MOSFET (Metal Oxide) 60 V 350mA (Tj) 5V, 10V 3Ohm @ 1A, 10V 2.4V @ 1mA - ±20V 65 pF @ 25 V - 1W (Tc) -55°C ~ 150°C (TJ) Through Hole
TN2510N8-G

TN2510N8-G

MOSFET N-CH 100V 730MA TO243AA

Microchip Technology
3,955 -

RFQ

TN2510N8-G

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 100 V 730mA (Tj) 3V, 10V 1.5Ohm @ 750mA, 10V 2V @ 1mA - ±20V 125 pF @ 25 V - 1.6W (Ta) -55°C ~ 150°C (TJ) Surface Mount
VP0104N3-G

VP0104N3-G

MOSFET P-CH 40V 250MA TO92-3

Microchip Technology
3,256 -

RFQ

VP0104N3-G

Ficha técnica

Bag - Active P-Channel MOSFET (Metal Oxide) 40 V 250mA (Tj) 5V, 10V 8Ohm @ 500mA, 10V 3.5V @ 1mA - ±20V 60 pF @ 25 V - 1W (Tc) -55°C ~ 150°C (TJ) Through Hole
TN0106N3-G

TN0106N3-G

MOSFET N-CH 60V 350MA TO92-3

Microchip Technology
947 -

RFQ

TN0106N3-G

Ficha técnica

Bag - Active N-Channel MOSFET (Metal Oxide) 60 V 350mA (Tj) 4.5V, 10V 3Ohm @ 500mA, 10V 2V @ 500µA - ±20V 60 pF @ 25 V - 1W (Tc) -55°C ~ 150°C (TJ) Through Hole
TN0606N3-G

TN0606N3-G

MOSFET N-CH 60V 500MA TO92-3

Microchip Technology
3,150 -

RFQ

TN0606N3-G

Ficha técnica

Bag - Active N-Channel MOSFET (Metal Oxide) 60 V 500mA (Tj) 3V, 10V 1.5Ohm @ 750mA, 10V 2V @ 1mA - ±20V 150 pF @ 25 V - 1W (Tc) -55°C ~ 150°C (TJ) Through Hole
VP0106N3-G

VP0106N3-G

MOSFET P-CH 60V 250MA TO92-3

Microchip Technology
2,101 -

RFQ

VP0106N3-G

Ficha técnica

Bag - Active P-Channel MOSFET (Metal Oxide) 60 V 250mA (Tj) 5V, 10V 8Ohm @ 500mA, 10V 3.5V @ 1mA - ±20V 60 pF @ 25 V - 1W (Tc) -55°C ~ 150°C (TJ) Through Hole
TP0606N3-G

TP0606N3-G

MOSFET P-CH 60V 320MA TO92-3

Microchip Technology
2,312 -

RFQ

TP0606N3-G

Ficha técnica

Bag - Active P-Channel MOSFET (Metal Oxide) 60 V 320mA (Tj) 5V, 10V 3.5Ohm @ 750mA, 10V 2.4V @ 1mA - ±20V 150 pF @ 25 V - 1W (Tc) -55°C ~ 150°C (TJ) Through Hole
VN2460N8-G

VN2460N8-G

MOSFET N-CH 600V 200MA TO243AA

Microchip Technology
2,938 -

RFQ

VN2460N8-G

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 600 V 200mA (Tj) 4.5V, 10V 20Ohm @ 100mA, 10V 4V @ 2mA - ±20V 150 pF @ 25 V - 1.6W (Ta) -55°C ~ 150°C (TJ) Surface Mount
VN2410L-G

VN2410L-G

MOSFET N-CH 240V 190MA TO92-3

Microchip Technology
3,814 -

RFQ

VN2410L-G

Ficha técnica

Bag - Active N-Channel MOSFET (Metal Oxide) 240 V 190mA (Tj) 2.5V, 10V 10Ohm @ 500mA, 10V 2V @ 1mA - ±20V 125 pF @ 25 V - 1W (Tc) -55°C ~ 150°C (TJ) Through Hole
TN0110N3-G

TN0110N3-G

MOSFET N-CH 100V 350MA TO92-3

Microchip Technology
364 -

RFQ

TN0110N3-G

Ficha técnica

Bag - Active N-Channel MOSFET (Metal Oxide) 100 V 350mA (Tj) 4.5V, 10V 3Ohm @ 500mA, 10V 2V @ 500µA - ±20V 60 pF @ 25 V - 1W (Tc) -55°C ~ 150°C (TJ) Through Hole
TN2540N8-G

TN2540N8-G

MOSFET N-CH 400V 260MA TO243AA

Microchip Technology
2,911 -

RFQ

TN2540N8-G

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 400 V 260mA (Tj) 4.5V, 10V 12Ohm @ 500mA, 10V 2V @ 1mA - ±20V 125 pF @ 25 V - 1.6W (Ta) -55°C ~ 150°C (TJ) Surface Mount
VN3205N8-G

VN3205N8-G

MOSFET N-CH 50V 1.5A TO243AA

Microchip Technology
2,777 -

RFQ

VN3205N8-G

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 50 V 1.5A (Tj) 4.5V, 10V 300mOhm @ 1.5A, 10V 2.4V @ 10mA - ±20V 300 pF @ 25 V - 1.6W (Ta) -55°C ~ 150°C (TJ) Surface Mount
TN0604N3-G

TN0604N3-G

MOSFET N-CH 40V 700MA TO92-3

Microchip Technology
1,000 -

RFQ

TN0604N3-G

Ficha técnica

Bag - Active N-Channel MOSFET (Metal Oxide) 40 V 700mA (Tj) 5V, 10V 750mOhm @ 1.5A, 10V 1.6V @ 1mA - ±20V 190 pF @ 20 V - 740mW (Ta) -55°C ~ 150°C (TJ) Through Hole
VN0808L-G

VN0808L-G

MOSFET N-CH 80V 300MA TO92-3

Microchip Technology
2,521 -

RFQ

VN0808L-G

Ficha técnica

Bag - Active N-Channel MOSFET (Metal Oxide) 80 V 300mA (Tj) 10V 4Ohm @ 1A, 10V 2V @ 1mA - ±30V 50 pF @ 25 V - 1W (Tc) -55°C ~ 150°C (TJ) Through Hole
VN3205N3-G

VN3205N3-G

MOSFET N-CH 50V 1.2A TO92-3

Microchip Technology
2,691 -

RFQ

VN3205N3-G

Ficha técnica

Bag - Active N-Channel MOSFET (Metal Oxide) 50 V 1.2A (Tj) 4.5V, 10V 300mOhm @ 3A, 10V 2.4V @ 10mA - ±20V 300 pF @ 25 V - 1W (Tc) -55°C ~ 150°C (TJ) Through Hole
TP0604N3-G

TP0604N3-G

MOSFET P-CH 40V 430MA TO92-3

Microchip Technology
642 -

RFQ

TP0604N3-G

Ficha técnica

Bag - Active P-Channel MOSFET (Metal Oxide) 40 V 430mA (Tj) 5V, 10V 2Ohm @ 1A, 10V 2.4V @ 1mA - ±20V 150 pF @ 20 V - 740mW (Ta) -55°C ~ 150°C (TJ) Through Hole
DN2540N5-G

DN2540N5-G

MOSFET N-CH 400V 500MA TO220-3

Microchip Technology
2,817 -

RFQ

DN2540N5-G

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 400 V 500mA (Tj) 0V 25Ohm @ 120mA, 0V - - ±20V 300 pF @ 25 V Depletion Mode 15W (Tc) -55°C ~ 150°C (TJ) Through Hole
VP0808L-G

VP0808L-G

MOSFET P-CH 80V 280MA TO92-3

Microchip Technology
2,421 -

RFQ

VP0808L-G

Ficha técnica

Bag - Active P-Channel MOSFET (Metal Oxide) 80 V 280mA (Tj) 10V 5Ohm @ 1A, 10V 4.5V @ 1mA - ±30V 150 pF @ 25 V - 1W (Tc) -55°C ~ 150°C (TJ) Through Hole
Total 697 Record«Prev1234567...35Next»
1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Inicio

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Producto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Teléfono

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Usuario