Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
TN2640K4-G

TN2640K4-G

MOSFET N-CH 400V 500MA TO252

Microchip Technology
2,032 -

RFQ

TN2640K4-G

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 400 V 500mA (Tj) 4.5V, 10V 5Ohm @ 500mA, 10V 2V @ 2mA - ±20V 225 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
MIC94051BM4 TR

MIC94051BM4 TR

MOSFET P-CH 6V 1.8A SOT143

Microchip Technology
3,349 -

RFQ

MIC94051BM4 TR

Ficha técnica

Tape & Reel (TR) SymFET™ Obsolete P-Channel MOSFET (Metal Oxide) 6 V 1.8A (Ta) 1.8V, 4.5V 160mOhm @ 100mA, 4.5V 1.2V @ 250µA - 6V 600 pF @ 5.5 V - 568mW (Ta) -40°C ~ 150°C (TJ) Surface Mount
MIC94052BC6-TR

MIC94052BC6-TR

MOSFET P-CH 6V 2A SC70-6

Microchip Technology
2,373 -

RFQ

MIC94052BC6-TR

Ficha técnica

Tape & Reel (TR) - Discontinued at Mosen P-Channel MOSFET (Metal Oxide) 6 V 2A (Ta) 1.8V, 4.5V 84mOhm @ 100mA, 4.5V 1.2V @ 250µA - 6V - - 270mW (Ta) -40°C ~ 150°C (TJ) Surface Mount
MIC94053BC6-TR

MIC94053BC6-TR

MOSFET P-CH 6V 2A SC70-6

Microchip Technology
3,816 -

RFQ

MIC94053BC6-TR

Ficha técnica

Tape & Reel (TR) - Discontinued at Mosen P-Channel MOSFET (Metal Oxide) 6 V 2A (Ta) 1.8V, 4.5V 84mOhm @ 100mA, 4.5V 1.2V @ 250µA - 6V - - 270mW (Ta) -40°C ~ 150°C (TJ) Surface Mount
2N6661

2N6661

MOSFET N-CH 90V 350MA TO39

Microchip Technology
3,069 -

RFQ

2N6661

Ficha técnica

Bag - Active N-Channel MOSFET (Metal Oxide) 90 V 350mA (Tj) 5V, 10V 4Ohm @ 1A, 10V 2V @ 1mA - ±20V 50 pF @ 24 V - 6.25W (Tc) -55°C ~ 150°C (TJ) Through Hole
MSC015SMA070B4

MSC015SMA070B4

TRANS SJT N-CH 700V 140A TO247-4

Microchip Technology
3,919 -

RFQ

MSC015SMA070B4

Ficha técnica

Tube - Active N-Channel SiCFET (Silicon Carbide) 700 V 140A (Tc) 20V 19mOhm @ 40A, 20V 2.4V @ 4mA 215 nC @ 20 V +23V, -10V 4500 pF @ 700 V - 455W (Tc) -55°C ~ 175°C (TJ) Through Hole
APT50M65JFLL

APT50M65JFLL

MOSFET N-CH 500V 58A ISOTOP

Microchip Technology
2,679 -

RFQ

APT50M65JFLL

Ficha técnica

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 500 V 58A (Tc) 10V 65mOhm @ 29A, 10V 5V @ 2.5mA 141 nC @ 10 V ±30V 7010 pF @ 25 V - 520W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
APT53F80J

APT53F80J

MOSFET N-CH 800V 57A ISOTOP

Microchip Technology
3,219 -

RFQ

APT53F80J

Ficha técnica

Tube POWER MOS 8™ Active N-Channel MOSFET (Metal Oxide) 800 V 57A (Tc) 10V 110mOhm @ 43A, 10V 5V @ 5mA 570 nC @ 10 V ±30V 17550 pF @ 25 V - 960W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
LND01K1-G

LND01K1-G

MOSFET N-CH 9V 330MA SOT23-5

Microchip Technology
3,195 -

RFQ

LND01K1-G

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 9 V 330mA (Tj) 0V 1.4Ohm @ 100mA, 0V - - +0.6V, -12V 46 pF @ 5 V Depletion Mode 360mW (Ta) -25°C ~ 125°C (TJ) Surface Mount
VN2110K1-G

VN2110K1-G

MOSFET N-CH 100V 200MA SOT23-3

Microchip Technology
9,514 -

RFQ

VN2110K1-G

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 100 V 200mA (Tj) 5V, 10V 4Ohm @ 500mA, 10V 2.4V @ 1mA - ±20V 50 pF @ 25 V - 360mW (Tc) -55°C ~ 150°C (TJ) Surface Mount
2N7002-G

2N7002-G

MOSFET N-CH 60V 115MA SOT23

Microchip Technology
1,229 -

RFQ

2N7002-G

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 60 V 115mA (Tj) 5V, 10V 7.5Ohm @ 500mA, 10V 2.5V @ 250µA - ±30V 50 pF @ 25 V - 360mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
2N7000-G

2N7000-G

MOSFET N-CH 60V 200MA TO92-3

Microchip Technology
3,678 -

RFQ

2N7000-G

Ficha técnica

Bag - Active N-Channel MOSFET (Metal Oxide) 60 V 200mA (Tj) 4.5V, 10V 5Ohm @ 500mA, 10V 3V @ 1mA - ±30V 60 pF @ 25 V - 1W (Tc) -55°C ~ 150°C (TJ) Through Hole
VN2106N3-G

VN2106N3-G

MOSFET N-CH 60V 300MA TO92-3

Microchip Technology
2,471 -

RFQ

VN2106N3-G

Ficha técnica

Bag - Active N-Channel MOSFET (Metal Oxide) 60 V 300mA (Tj) 5V, 10V 4Ohm @ 500mA, 10V 2.4V @ 1mA - ±20V 50 pF @ 25 V - 1W (Tc) -55°C ~ 150°C (TJ) Through Hole
TN5325K1-G

TN5325K1-G

MOSFET N-CH 250V 150MA TO236AB

Microchip Technology
2,141 -

RFQ

TN5325K1-G

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 250 V 150mA (Ta) 4.5V, 10V 7Ohm @ 1A, 10V 2V @ 1mA - ±20V 110 pF @ 25 V - 360mW (Ta) -55°C ~ 150°C (TA) Surface Mount
VN2222LL-G

VN2222LL-G

MOSFET N-CH 60V 230MA TO92-3

Microchip Technology
2,017 -

RFQ

VN2222LL-G

Ficha técnica

Bag - Active N-Channel MOSFET (Metal Oxide) 60 V 230mA (Tj) 5V, 10V 7.5Ohm @ 500mA, 10V 2.5V @ 1mA - ±30V 60 pF @ 25 V - 400mW (Ta), 1W (Tc) -55°C ~ 150°C (TJ) Through Hole
VN10KN3-G-P002

VN10KN3-G-P002

MOSFET N-CH 60V 310MA TO92-3

Microchip Technology
3,611 -

RFQ

VN10KN3-G-P002

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 60 V 310mA (Tj) 5V, 10V 5Ohm @ 500mA, 10V 2.5V @ 1mA - ±30V 60 pF @ 25 V - 1W (Tc) -55°C ~ 150°C (TJ) Through Hole
TP5322K1-G

TP5322K1-G

MOSFET P-CH 220V 120MA TO236AB

Microchip Technology
2,781 -

RFQ

TP5322K1-G

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 220 V 120mA (Tj) 4.5V, 10V 12Ohm @ 200mA, 10V 2.4V @ 1mA - ±20V 110 pF @ 25 V - 360mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
VN10KN3-G

VN10KN3-G

MOSFET N-CH 60V 310MA TO92-3

Microchip Technology
2,953 -

RFQ

VN10KN3-G

Ficha técnica

Bag - Active N-Channel MOSFET (Metal Oxide) 60 V 310mA (Tj) 5V, 10V 5Ohm @ 500mA, 10V 2.5V @ 1mA - ±30V 60 pF @ 25 V - 1W (Tc) -55°C ~ 150°C (TJ) Through Hole
TP2104K1-G

TP2104K1-G

MOSFET P-CH 40V 160MA TO236AB

Microchip Technology
2,125 -

RFQ

TP2104K1-G

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 40 V 160mA (Tj) 4.5V, 10V 6Ohm @ 500mA, 10V 2V @ 1mA - ±20V 60 pF @ 25 V - 360mW (Ta) -55°C ~ 150°C Surface Mount
VP2106N3-G

VP2106N3-G

MOSFET P-CH 60V 250MA TO92-3

Microchip Technology
2,759 -

RFQ

VP2106N3-G

Ficha técnica

Bag - Active P-Channel MOSFET (Metal Oxide) 60 V 250mA (Tj) 5V, 10V 12Ohm @ 500mA, 10V 3.5V @ 1mA - ±20V 60 pF @ 25 V - 1W (Tc) -55°C ~ 150°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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