Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SI7686DP-T1-GE3

SI7686DP-T1-GE3

MOSFET N-CH 30V 35A PPAK SO-8

Vishay Siliconix
577 -

RFQ

SI7686DP-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 35A (Tc) 4.5V, 10V 9.5mOhm @ 13.8A, 10V 3V @ 250µA 26 nC @ 10 V ±20V 1220 pF @ 15 V - 5W (Ta), 37.9W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFR220TRRPBF

IRFR220TRRPBF

MOSFET N-CH 200V 4.8A DPAK

Vishay Siliconix
129 -

RFQ

IRFR220TRRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 200 V 4.8A (Tc) 10V 800mOhm @ 2.9A, 10V 4V @ 250µA 14 nC @ 10 V ±20V 260 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI4459ADY-T1-GE3

SI4459ADY-T1-GE3

MOSFET P-CH 30V 29A 8SO

Vishay Siliconix
12,170 -

RFQ

SI4459ADY-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 30 V 29A (Tc) 4.5V, 10V 5mOhm @ 15A, 10V 2.5V @ 250µA 195 nC @ 10 V ±20V 6000 pF @ 15 V - 3.5W (Ta), 7.8W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRLU024

IRLU024

MOSFET N-CH 60V 14A TO251AA

Vishay Siliconix
3,027 -

RFQ

IRLU024

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 14A (Tc) 4V, 5V 100mOhm @ 8.4A, 5V 2V @ 250µA 18 nC @ 5 V ±10V 870 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRLU110

IRLU110

MOSFET N-CH 100V 4.3A TO251AA

Vishay Siliconix
3,506 -

RFQ

IRLU110

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 100 V 4.3A (Tc) 4V, 5V 540mOhm @ 2.6A, 5V 2V @ 250µA 6.1 nC @ 5 V ±10V 250 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRLZ14STRL

IRLZ14STRL

MOSFET N-CH 60V 10A D2PAK

Vishay Siliconix
2,452 -

RFQ

IRLZ14STRL

Ficha técnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 60 V 10A (Tc) 4V, 5V 200mOhm @ 6A, 5V 2V @ 250µA 8.4 nC @ 5 V ±10V 400 pF @ 25 V - 3.7W (Ta), 43W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLZ14STRR

IRLZ14STRR

MOSFET N-CH 60V 10A D2PAK

Vishay Siliconix
3,742 -

RFQ

IRLZ14STRR

Ficha técnica

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 10A (Tc) 4V, 5V 200mOhm @ 6A, 5V 2V @ 250µA 8.4 nC @ 5 V ±10V 400 pF @ 25 V - 3.7W (Ta), 43W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLZ24L

IRLZ24L

MOSFET N-CH 60V 17A TO262-3

Vishay Siliconix
3,352 -

RFQ

IRLZ24L

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 17A (Tc) 4V, 5V 100mOhm @ 10A, 5V 2V @ 250µA 18 nC @ 5 V ±10V 870 pF @ 25 V - 3.7W (Ta), 60W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRLZ24S

IRLZ24S

MOSFET N-CH 60V 17A D2PAK

Vishay Siliconix
3,457 -

RFQ

IRLZ24S

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 17A (Tc) 4V, 5V 100mOhm @ 10A, 5V 2V @ 250µA 18 nC @ 5 V ±10V 870 pF @ 25 V - 3.7W (Ta), 60W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLZ24STRL

IRLZ24STRL

MOSFET N-CH 60V 17A D2PAK

Vishay Siliconix
2,452 -

RFQ

IRLZ24STRL

Ficha técnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 60 V 17A (Tc) 4V, 5V 100mOhm @ 10A, 5V 2V @ 250µA 18 nC @ 5 V ±10V 870 pF @ 25 V - 3.7W (Ta), 60W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLZ24STRR

IRLZ24STRR

MOSFET N-CH 60V 17A D2PAK

Vishay Siliconix
3,887 -

RFQ

IRLZ24STRR

Ficha técnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 60 V 17A (Tc) 4V, 5V 100mOhm @ 10A, 5V 2V @ 250µA 18 nC @ 5 V ±10V 870 pF @ 25 V - 3.7W (Ta), 60W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLZ34L

IRLZ34L

MOSFET N-CH 60V 30A TO262-3

Vishay Siliconix
2,080 -

RFQ

IRLZ34L

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 30A (Tc) 4V, 5V 50mOhm @ 18A, 5V 2V @ 250µA 35 nC @ 5 V ±10V 1600 pF @ 25 V - 3.7W (Ta), 88W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRLZ34S

IRLZ34S

MOSFET N-CH 60V 30A D2PAK

Vishay Siliconix
2,739 -

RFQ

IRLZ34S

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 30A (Tc) 4V, 5V 50mOhm @ 18A, 5V 2V @ 250µA 35 nC @ 5 V ±10V 1600 pF @ 25 V - 3.7W (Ta), 88W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLZ34STRL

IRLZ34STRL

MOSFET N-CH 60V 30A D2PAK

Vishay Siliconix
3,453 -

RFQ

IRLZ34STRL

Ficha técnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 60 V 30A (Tc) 4V, 5V 50mOhm @ 18A, 5V 2V @ 250µA 35 nC @ 5 V ±10V 1600 pF @ 25 V - 3.7W (Ta), 88W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLZ34STRR

IRLZ34STRR

MOSFET N-CH 60V 30A D2PAK

Vishay Siliconix
3,050 -

RFQ

IRLZ34STRR

Ficha técnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 60 V 30A (Tc) 4V, 5V 50mOhm @ 18A, 5V 2V @ 250µA 35 nC @ 5 V ±10V 1600 pF @ 25 V - 3.7W (Ta), 88W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLZ44L

IRLZ44L

MOSFET N-CH 60V 50A TO262-3

Vishay Siliconix
2,889 -

RFQ

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 4V, 5V 28mOhm @ 31A, 5V 2V @ 250µA 66 nC @ 5 V ±10V 3300 pF @ 25 V - - -55°C ~ 175°C (TJ) Through Hole
IRLZ44STRL

IRLZ44STRL

MOSFET N-CH 60V 50A D2PAK

Vishay Siliconix
3,298 -

RFQ

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 4V, 5V 28mOhm @ 31A, 5V 2V @ 250µA 66 nC @ 5 V ±10V 3300 pF @ 25 V - 3.7W (Ta), 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SIHA2N80E-GE3

SIHA2N80E-GE3

MOSFET N-CH 800V 2.8A TO220

Vishay Siliconix
3,422 -

RFQ

SIHA2N80E-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) E Active N-Channel MOSFET (Metal Oxide) 800 V 2.8A (Tc) 10V 2.75Ohm @ 1A, 10V 4V @ 250µA 19.6 nC @ 10 V ±30V 315 pF @ 100 V - 29W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIR876ADP-T1-GE3

SIR876ADP-T1-GE3

MOSFET N-CH 100V 40A PPAK SO-8

Vishay Siliconix
474 -

RFQ

SIR876ADP-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 100 V 40A (Tc) 4.5V, 10V 10.8mOhm @ 20A, 10V 2.8V @ 250µA 49 nC @ 10 V ±20V 1630 pF @ 50 V - 5W (Ta), 62.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFR224TRPBF

IRFR224TRPBF

MOSFET N-CH 250V 3.8A DPAK

Vishay Siliconix
290 -

RFQ

IRFR224TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 250 V 3.8A (Tc) 10V 1.1Ohm @ 2.3A, 10V 4V @ 250µA 14 nC @ 10 V ±20V 260 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) Surface Mount
Total 4747 Record«Prev1... 1415161718192021...238Next»
1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Inicio

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Producto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Teléfono

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Usuario