Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRFB17N50L

IRFB17N50L

MOSFET N-CH 500V 16A TO220AB

Vishay Siliconix
3,677 -

RFQ

IRFB17N50L

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 500 V 16A (Tc) 10V 320mOhm @ 9.9A, 10V 5V @ 250µA 130 nC @ 10 V ±30V 2760 pF @ 25 V - 220W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFBC30PBF-BE3

IRFBC30PBF-BE3

MOSFET N-CH 600V 3.6A TO220AB

Vishay Siliconix
960 -

RFQ

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 3.6A (Tc) 10V 2.2Ohm @ 2.2A, 10V 4V @ 250µA 31 nC @ 10 V ±20V 660 pF @ 25 V - 74W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF530STRLPBF

IRF530STRLPBF

MOSFET N-CH 100V 14A D2PAK

Vishay Siliconix
238 -

RFQ

IRF530STRLPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 100 V 14A (Tc) 10V 160mOhm @ 8.4A, 10V 4V @ 250µA 26 nC @ 10 V ±20V 670 pF @ 25 V - 3.7W (Ta), 88W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SI7898DP-T1-E3

SI7898DP-T1-E3

MOSFET N-CH 150V 3A PPAK SO-8

Vishay Siliconix
2,417 -

RFQ

SI7898DP-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 150 V 3A (Ta) 6V, 10V 85mOhm @ 3.5A, 10V 4V @ 250µA 21 nC @ 10 V ±20V - - 1.9W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI6415DQ-T1-E3

SI6415DQ-T1-E3

MOSFET P-CH 30V 6.5A 8TSSOP

Vishay Siliconix
2,682 -

RFQ

SI6415DQ-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 30 V 6.5A (Ta) 4.5V, 10V 19mOhm @ 6.5A, 10V 1V @ 250µA (Min) 70 nC @ 10 V ±20V - - 1.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SIHFBF30S-GE3

SIHFBF30S-GE3

MOSFET N-CHANNEL 900V

Vishay Siliconix
998 -

RFQ

SIHFBF30S-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 900 V 3.6A (Tc) 10V 3.7Ohm @ 2.2A, 100V 4V @ 250µA 78 nC @ 10 V ±20V 1200 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHA12N50E-GE3

SIHA12N50E-GE3

N-CHANNEL 500V

Vishay Siliconix
995 -

RFQ

SIHA12N50E-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 500 V 10.5A (Tc) 10V 380mOhm @ 6A, 10V 4V @ 250µA 50 nC @ 10 V ±30V 886 pF @ 100 V - 32W (Tc) -55°C ~ 150°C (TJ) Through Hole
SI7892BDP-T1-E3

SI7892BDP-T1-E3

MOSFET N-CH 30V 15A PPAK SO-8

Vishay Siliconix
2,313 -

RFQ

SI7892BDP-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 15A (Ta) 4.5V, 10V 4.2mOhm @ 25A, 10V 3V @ 250µA 40 nC @ 4.5 V ±20V 3775 pF @ 15 V - 1.8W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF644NS

IRF644NS

MOSFET N-CH 250V 14A D2PAK

Vishay Siliconix
3,751 -

RFQ

IRF644NS

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 250 V 14A (Tc) 10V 240mOhm @ 8.4A, 10V 4V @ 250µA 54 nC @ 10 V ±20V 1060 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SI4896DY-T1-GE3

SI4896DY-T1-GE3

MOSFET N-CH 80V 6.7A 8SO

Vishay Siliconix
3,177 -

RFQ

SI4896DY-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 80 V 6.7A (Ta) 6V, 10V 16.5mOhm @ 10A, 10V 2V @ 250µA (Min) 41 nC @ 10 V ±20V - - 1.56W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SIR438DP-T1-GE3

SIR438DP-T1-GE3

MOSFET N-CH 25V 60A PPAK SO-8

Vishay Siliconix
261 -

RFQ

SIR438DP-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 25 V 60A (Tc) 4.5V, 10V 1.8mOhm @ 20A, 10V 2.3V @ 250µA 105 nC @ 10 V ±20V 4560 pF @ 10 V - 5.4W (Ta), 83W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFP31N50L

IRFP31N50L

MOSFET N-CH 500V 31A TO247-3

Vishay Siliconix
3,946 -

RFQ

IRFP31N50L

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 500 V 31A (Tc) 10V 180mOhm @ 19A, 10V 5V @ 250µA 210 nC @ 10 V ±30V 5000 pF @ 25 V - 460W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFPS43N50K

IRFPS43N50K

MOSFET N-CH 500V 47A SUPER247

Vishay Siliconix
2,582 -

RFQ

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 500 V 47A (Tc) 10V 90mOhm @ 28A, 10V 5V @ 250µA 350 nC @ 10 V ±30V 8310 pF @ 25 V - 540W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFPS40N50L

IRFPS40N50L

MOSFET N-CH 500V 46A SUPER247

Vishay Siliconix
3,550 -

RFQ

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 500 V 46A (Tc) 10V 100mOhm @ 28A, 10V 5V @ 250µA 380 nC @ 10 V ±30V 8110 pF @ 25 V - 540W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFP32N50K

IRFP32N50K

MOSFET N-CH 500V 32A TO247-3

Vishay Siliconix
2,974 -

RFQ

IRFP32N50K

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 500 V 32A (Tc) 10V 160mOhm @ 32A, 10V 5V @ 250µA 190 nC @ 10 V ±30V 5280 pF @ 25 V - 460W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFB18N50K

IRFB18N50K

MOSFET N-CH 500V 17A TO220AB

Vishay Siliconix
2,171 -

RFQ

IRFB18N50K

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 17A (Tc) 10V 290mOhm @ 10A, 10V 5V @ 250µA 120 nC @ 10 V ±30V 2830 pF @ 25 V - 220W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFP23N50L

IRFP23N50L

MOSFET N-CH 500V 23A TO247-3

Vishay Siliconix
2,361 -

RFQ

IRFP23N50L

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 500 V 23A (Tc) 10V 235mOhm @ 14A, 10V 5V @ 250µA 150 nC @ 10 V ±30V 3600 pF @ 25 V - 370W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFP460P

IRFP460P

MOSFET N-CH 500V 20A TO247-3

Vishay Siliconix
3,291 -

RFQ

IRFP460P

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 500 V 20A (Tc) - 270mOhm @ 12A, 10V 4V @ 250µA 210 nC @ 10 V - 4200 pF @ 25 V - - -55°C ~ 150°C (TJ) Through Hole
SI4630DY-T1-GE3

SI4630DY-T1-GE3

MOSFET N-CH 25V 40A 8SO

Vishay Siliconix
638 -

RFQ

SI4630DY-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 25 V 40A (Tc) 4.5V, 10V 2.7mOhm @ 20A, 10V 2.2V @ 250µA 161 nC @ 10 V ±16V 6670 pF @ 15 V - 3.5W (Ta), 7.8W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF620STRLPBF

IRF620STRLPBF

MOSFET N-CH 200V 5.2A D2PAK

Vishay Siliconix
122 -

RFQ

IRF620STRLPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 200 V 5.2A (Tc) 10V 800mOhm @ 3.1A, 10V 4V @ 250µA 14 nC @ 10 V ±20V 260 pF @ 25 V - 3W (Ta), 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
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1800+ Fabricantes en todo el mundo
15,000+
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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