Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SIHP8N50D-E3

SIHP8N50D-E3

MOSFET N-CH 500V 8.7A TO220AB

Vishay Siliconix
3,996 -

RFQ

SIHP8N50D-E3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 8.7A (Tc) 10V 850mOhm @ 4A, 10V 5V @ 250µA 30 nC @ 10 V ±30V 527 pF @ 100 V - 156W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFR224TRLPBF

IRFR224TRLPBF

MOSFET N-CH 250V 3.8A DPAK

Vishay Siliconix
2,300 -

RFQ

IRFR224TRLPBF

Ficha técnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 250 V 3.8A (Tc) 10V 1.1Ohm @ 2.3A, 10V 4V @ 250µA 14 nC @ 10 V ±20V 260 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFR420ATRLPBF

IRFR420ATRLPBF

MOSFET N-CH 500V 3.3A DPAK

Vishay Siliconix
2,572 -

RFQ

IRFR420ATRLPBF

Ficha técnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 500 V 3.3A (Tc) 10V 3Ohm @ 1.5A, 10V 4.5V @ 250µA 17 nC @ 10 V ±30V 340 pF @ 25 V - 83W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI7634BDP-T1-E3

SI7634BDP-T1-E3

MOSFET N-CH 30V 40A PPAK SO-8

Vishay Siliconix
3,960 -

RFQ

SI7634BDP-T1-E3

Ficha técnica

Tape & Reel (TR) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 40A (Tc) 4.5V, 10V 5.4mOhm @ 15A, 10V 2.6V @ 250µA 68 nC @ 10 V ±20V 3150 pF @ 15 V - 5W (Ta), 48W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SISS42DN-T1-GE3

SISS42DN-T1-GE3

MOSFET N-CH 100V 11.8/40.5A PPAK

Vishay Siliconix
2,085 -

RFQ

SISS42DN-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 100 V 11.8A (Ta), 40.5A (Tc) 7.5V, 10V 14.4mOhm @ 15A, 10V 3.4V @ 250µA 38 nC @ 10 V ±20V 1850 pF @ 50 V - 4.8W (Ta), 57W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFR1N60ATRLPBF

IRFR1N60ATRLPBF

MOSFET N-CH 600V 1.4A DPAK

Vishay Siliconix
100 -

RFQ

IRFR1N60ATRLPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 600 V 1.4A (Tc) 10V 7Ohm @ 840mA, 10V 4V @ 250µA 14 nC @ 10 V ±30V 229 pF @ 25 V - 36W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFR224TRPBF-BE3

IRFR224TRPBF-BE3

N-CHANNEL 250V

Vishay Siliconix
2,546 -

RFQ

IRFR224TRPBF-BE3

Ficha técnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 250 V 3.8A (Tc) 10V 1.1Ohm @ 2.3A, 10V 4V @ 250µA 14 nC @ 10 V ±20V 260 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIR800DP-T1-RE3

SIR800DP-T1-RE3

MOSFET N-CH 20V 50A PPAK SO-8

Vishay Siliconix
2,474 -

RFQ

Tape & Reel (TR) TrenchFET® Gen III Active N-Channel MOSFET (Metal Oxide) 20 V 50A (Tc) 2.5V, 10V 2.3mOhm @ 15A, 10V 1.5V @ 250µA 133 nC @ 10 V ±12V 5125 pF @ 10 V - 69W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SQJ412EP-T2_GE3

SQJ412EP-T2_GE3

MOSFET N-CH 40V 32A PPAK SO-8

Vishay Siliconix
2,275 -

RFQ

SQJ412EP-T2_GE3

Ficha técnica

Tape & Reel (TR) Automotive, AEC-Q101, TrenchFET® Active N-Channel MOSFET (Metal Oxide) 40 V 32A (Tc) 4.5V, 10V 4.1mOhm @ 10.3A, 10V 2.5V @ 250µA 120 nC @ 10 V ±20V 5950 pF @ 20 V - 83W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFR210TRPBF-BE3

IRFR210TRPBF-BE3

MOSFET N-CH 200V 2.6A DPAK

Vishay Siliconix
6,000 -

RFQ

IRFR210TRPBF-BE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 200 V 2.6A (Tc) - 1.5Ohm @ 1.6A, 10V 4V @ 250µA 8.2 nC @ 10 V ±20V 140 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFR210TRLPBF-BE3

IRFR210TRLPBF-BE3

MOSFET N-CH 200V 2.6A DPAK

Vishay Siliconix
3,000 -

RFQ

IRFR210TRLPBF-BE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 200 V 2.6A (Tc) - 1.5Ohm @ 1.6A, 10V 4V @ 250µA 8.2 nC @ 10 V ±20V 140 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SQJ840EP-T1_GE3

SQJ840EP-T1_GE3

MOSFET N-CH 30V 30A PPAK SO-8

Vishay Siliconix
2,195 -

RFQ

SQJ840EP-T1_GE3

Ficha técnica

Tape & Reel (TR) Automotive, AEC-Q101, TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 30A (Tc) 4.5V, 10V 9.3mOhm @ 10.3A, 10V 2.2V @ 250µA 38 nC @ 10 V ±20V 1900 pF @ 15 V - 46W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SQJ456EP-T2_GE3

SQJ456EP-T2_GE3

MOSFET N-CH 100V 32A PPAK SO-8

Vishay Siliconix
2,297 -

RFQ

SQJ456EP-T2_GE3

Ficha técnica

Tape & Reel (TR) Automotive, AEC-Q101, TrenchFET® Active N-Channel MOSFET (Metal Oxide) 100 V 32A (Tc) 6V, 10V 26mOhm @ 9.3A, 10V 3.5V @ 250µA 63 nC @ 10 V ±20V 3342 pF @ 25 V - 83W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SQR40030ER_GE3

SQR40030ER_GE3

MOSFET N-CH 40V TO252 REVERSE

Vishay Siliconix
3,960 -

RFQ

Tape & Reel (TR),Cut Tape (CT) - Active - - - - - - - - - - - - - Surface Mount
SQR97N06-6M3L_GE3

SQR97N06-6M3L_GE3

MOSFET N-CH 60V 50A TO252

Vishay Siliconix
2,337 -

RFQ

SQR97N06-6M3L_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 60 V 97A (Tc) 4.5V, 10V 6.3mOhm @ 25A, 10V 2.5V @ 250µA 125 nC @ 10 V ±20V 6060 pF @ 25 V - 136W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SIHB8N50D-GE3

SIHB8N50D-GE3

MOSFET N-CH 500V 8.7A TO263

Vishay Siliconix
3,175 -

RFQ

SIHB8N50D-GE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 8.7A (Tc) 10V 850mOhm @ 4A, 10V 5V @ 250µA 30 nC @ 10 V ±30V 527 pF @ 100 V - 156W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHFR9310TR-GE3

SIHFR9310TR-GE3

MOSFET P-CH 400V 1.8A DPAK

Vishay Siliconix
3,950 -

RFQ

SIHFR9310TR-GE3

Ficha técnica

Tape & Reel (TR) - Active P-Channel MOSFET (Metal Oxide) 400 V 1.8A (Tc) 10V 7Ohm @ 1.1A, 10V 4V @ 250µA 13 nC @ 10 V ±20V 270 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFZ34SPBF

IRFZ34SPBF

MOSFET N-CH 60V 30A D2PAK

Vishay Siliconix
2,227 -

RFQ

IRFZ34SPBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 30A (Tc) 10V 50mOhm @ 18A, 10V 4V @ 250µA 46 nC @ 10 V ±20V 1200 pF @ 25 V - 3.7W (Ta), 88W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SIHF9540S-GE3

SIHF9540S-GE3

MOSFET P-CH 100V 19A D2PAK

Vishay Siliconix
2,967 -

RFQ

SIHF9540S-GE3

Ficha técnica

Tape & Reel (TR) - Active P-Channel MOSFET (Metal Oxide) 100 V 19A (Tc) 10V 200mOhm @ 11A, 10V 4V @ 250µA 61 nC @ 10 V ±20V 1400 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SQD40030E_GE3

SQD40030E_GE3

MOSFET N-CHANNEL 40V TO252AA

Vishay Siliconix
2,440 -

RFQ

SQD40030E_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 10V - - 65 nC @ 10 V - - - - 175°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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