Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRFR9010TRLPBF

IRFR9010TRLPBF

MOSFET P-CH 50V 5.3A DPAK

Vishay Siliconix
3,077 -

RFQ

IRFR9010TRLPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 50 V 5.3A (Tc) 10V 500mOhm @ 2.8A, 10V 4V @ 250µA 9.1 nC @ 10 V ±20V 240 pF @ 25 V - 25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI4426DY-T1-E3

SI4426DY-T1-E3

MOSFET N-CH 20V 6.5A 8SO

Vishay Siliconix
2,074 -

RFQ

SI4426DY-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 20 V 6.5A (Ta) 2.5V, 4.5V 25mOhm @ 8.5A, 4.5V 1.4V @ 250µA 50 nC @ 4.5 V ±12V - - 1.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFR9014PBF-BE3

IRFR9014PBF-BE3

P-CHANNEL 60V

Vishay Siliconix
3,139 -

RFQ

IRFR9014PBF-BE3

Ficha técnica

Tape & Reel (TR) - Active P-Channel MOSFET (Metal Oxide) 60 V 5.1A (Tc) 10V 500mOhm @ 3.1A, 10V 4V @ 250µA 12 nC @ 10 V ±20V 270 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI3493BDV-T1-BE3

SI3493BDV-T1-BE3

P-CHANNEL 20-V (D-S) MOSFET

Vishay Siliconix
8,846 -

RFQ

SI3493BDV-T1-BE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 20 V 7A (Ta), 8A (Tc) 1.8V, 4.5V 27.5mOhm @ 7A, 4.5V 900mV @ 250µA 43.5 nC @ 5 V ±8V 1805 pF @ 10 V - 2.08W (Ta), 2.97W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHFR320TRL-GE3

SIHFR320TRL-GE3

MOSFET N-CHANNEL 400V

Vishay Siliconix
3,000 -

RFQ

SIHFR320TRL-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 400 V 3.1A (Tc) 10V 1.8Ohm @ 1.9A, 10V 4V @ 250µA 20 nC @ 10 V ±20V 350 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SQD45P03-12-T4_GE3

SQD45P03-12-T4_GE3

MOSFET P-CH 30V 50A TO252AA

Vishay Siliconix
3,968 -

RFQ

SQD45P03-12-T4_GE3

Ficha técnica

Tape & Reel (TR) Automotive, AEC-Q101, TrenchFET® Active P-Channel MOSFET (Metal Oxide) 30 V 50A (Tc) 4.5V, 10V 10mOhm @ 15A, 10V 2.5V @ 250µA 83 nC @ 10 V ±20V 3495 pF @ 15 V - 71W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRL510SPBF

IRL510SPBF

MOSFET N-CH 100V 5.6A D2PAK

Vishay Siliconix
3,494 -

RFQ

IRL510SPBF

Ficha técnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 100 V 5.6A (Tc) 4V, 5V 540mOhm @ 3.4A, 5V 2V @ 250µA 6.1 nC @ 5 V ±10V 250 pF @ 25 V - 3.7W (Ta), 43W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFU1N60APBF

IRFU1N60APBF

MOSFET N-CH 600V 1.4A TO251AA

Vishay Siliconix
3,779 -

RFQ

IRFU1N60APBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 1.4A (Tc) 10V 7Ohm @ 840mA, 10V 4V @ 250µA 14 nC @ 10 V ±30V 229 pF @ 25 V - 36W (Tc) -55°C ~ 150°C (TJ) Through Hole
SISH110DN-T1-GE3

SISH110DN-T1-GE3

MOSFET N-CH 20V 13.5A PPAK

Vishay Siliconix
2,392 -

RFQ

SISH110DN-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen II Active N-Channel MOSFET (Metal Oxide) 20 V 13.5A (Ta) 4.5V, 10V 5.3mOhm @ 21.1A, 10V 2.5V @ 250µA 21 nC @ 4.5 V ±20V - - 1.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFR220TRPBF-BE3

IRFR220TRPBF-BE3

N-CHANNEL 200V

Vishay Siliconix
3,066 -

RFQ

IRFR220TRPBF-BE3

Ficha técnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 200 V 4.8A (Tc) 10V 800mOhm @ 2.9A, 10V 4V @ 250µA 14 nC @ 10 V ±20V 260 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFR220PBF-BE3

IRFR220PBF-BE3

N-CHANNEL 200V

Vishay Siliconix
3,212 -

RFQ

IRFR220PBF-BE3

Ficha técnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 200 V 4.8A (Tc) 10V 800mOhm @ 2.9A, 10V 4V @ 250µA 14 nC @ 10 V ±20V 260 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHU2N80E-GE3

SIHU2N80E-GE3

MOSFET N-CH 800V 2.8A IPAK

Vishay Siliconix
2,024 -

RFQ

SIHU2N80E-GE3

Ficha técnica

Tube E Active N-Channel MOSFET (Metal Oxide) 800 V 2.8A (Tc) 10V 2.75Ohm @ 1A, 10V 4V @ 250µA 19.6 nC @ 10 V ±30V 315 pF @ 100 V - 62.5W (Tc) -55°C ~ 150°C (TJ) Through Hole
SISA12BDN-T1-GE3

SISA12BDN-T1-GE3

N-CHANNEL 30-V (D-S) MOSFET POWE

Vishay Siliconix
6,050 -

RFQ

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 30 V 24A (Ta), 87A (Tc) 4.5V, 10V 4.3mOhm @ 10A, 10V 2.4V @ 250µA 32 nC @ 10 V +20V, -16V 1470 pF @ 15 V - 4W (Ta), 52W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFR120TRRPBF

IRFR120TRRPBF

MOSFET N-CH 100V 7.7A DPAK

Vishay Siliconix
3,258 -

RFQ

IRFR120TRRPBF

Ficha técnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 100 V 7.7A (Tc) 10V 270mOhm @ 4.6A, 10V 4V @ 250µA 16 nC @ 10 V ±20V 360 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF614PBF

IRF614PBF

MOSFET N-CH 250V 2.7A TO220AB

Vishay Siliconix
3,945 -

RFQ

IRF614PBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 250 V 2.7A (Tc) 10V 2Ohm @ 1.6A, 10V 4V @ 250µA 8.2 nC @ 10 V ±20V 140 pF @ 25 V - 36W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFR9110TRRPBF

IRFR9110TRRPBF

MOSFET P-CH 100V 3.1A DPAK

Vishay Siliconix
3,543 -

RFQ

IRFR9110TRRPBF

Ficha técnica

Tape & Reel (TR) - Active P-Channel MOSFET (Metal Oxide) 100 V 3.1A (Tc) 10V 1.2Ohm @ 1.9A, 10V 4V @ 250µA 8.7 nC @ 10 V ±20V 200 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI7423DN-T1-GE3

SI7423DN-T1-GE3

MOSFET P-CH 30V 7.4A PPAK 1212-8

Vishay Siliconix
3,503 -

RFQ

SI7423DN-T1-GE3

Ficha técnica

Tape & Reel (TR) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 30 V 7.4A (Ta) 4.5V, 10V 18mOhm @ 11.7A, 10V 3V @ 250µA 56 nC @ 10 V ±20V - - 1.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFR9110TRLPBF

IRFR9110TRLPBF

MOSFET P-CH 100V 3.1A DPAK

Vishay Siliconix
3,926 -

RFQ

IRFR9110TRLPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 100 V 3.1A (Tc) 10V 1.2Ohm @ 1.9A, 10V 4V @ 250µA 8.7 nC @ 10 V ±20V 200 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SQR100N04-3M8R_GE3

SQR100N04-3M8R_GE3

N-CHANNEL 40-V (D-S) 175C MOSFET

Vishay Siliconix
2,121 -

RFQ

Tape & Reel (TR) - Active - - - - - - - - - - - - - -
SISA10BDN-T1-GE3

SISA10BDN-T1-GE3

N-CHANNEL 30-V (D-S) MOSFET POWE

Vishay Siliconix
6,050 -

RFQ

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 30 V 26A (Ta), 104A (Tc) 4.5V, 10V 3.6mOhm @ 10A, 10V 2.4V @ 250µA 36.2 nC @ 10 V +20V, -16V 1710 pF @ 15 V - 3.8W (Ta), 63W (Tc) -55°C ~ 150°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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