Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SIHF530STRL-GE3

SIHF530STRL-GE3

MOSFET N-CH 100V 14A D2PAK

Vishay Siliconix
2,694 -

RFQ

SIHF530STRL-GE3

Ficha técnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 100 V 14A (Tc) 10V 160mOhm @ 8.4A, 10V 4V @ 250µA 26 nC @ 10 V ±20V 670 pF @ 25 V - 3.7W (Ta), 88W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SIHP5N50D-E3

SIHP5N50D-E3

MOSFET N-CH 500V 5.3A TO220AB

Vishay Siliconix
2,054 -

RFQ

SIHP5N50D-E3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 5.3A (Tc) 10V 1.5Ohm @ 2.5A, 10V 5V @ 250µA 20 nC @ 10 V ±30V 325 pF @ 100 V - 104W (Tc) -55°C ~ 150°C (TJ) Through Hole
SQJ858EP-T1_GE3

SQJ858EP-T1_GE3

MOSFET N-CH 40V 75A PPAK SO-8

Vishay Siliconix
3,793 -

RFQ

SQJ858EP-T1_GE3

Ficha técnica

Tape & Reel (TR) Automotive, AEC-Q101, TrenchFET® Active N-Channel MOSFET (Metal Oxide) 40 V 75A (Tc) 4.5V, 10V 6mOhm @ 11A, 10V 2.5V @ 250µA 60 nC @ 10 V ±20V 2500 pF @ 20 V - 68W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SIR164DP-T1-RE3

SIR164DP-T1-RE3

MOSFET N-CH 30V 50A PPAK SO-8

Vishay Siliconix
2,306 -

RFQ

SIR164DP-T1-RE3

Ficha técnica

Tape & Reel (TR) TrenchFET® Gen III Active N-Channel MOSFET (Metal Oxide) 30 V 50A (Tc) 4.5V, 10V 2.5mOhm @ 15A, 10V 2.5V @ 250µA 123 nC @ 10 V ±20V 3950 pF @ 15 V - 69W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFD214PBF

IRFD214PBF

MOSFET N-CH 250V 450MA 4DIP

Vishay Siliconix
3,769 -

RFQ

IRFD214PBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 250 V 450mA (Ta) 10V 2Ohm @ 270mA, 10V 4V @ 250µA 8.2 nC @ 10 V ±20V 140 pF @ 25 V - 1W (Ta) -55°C ~ 150°C (TJ) Through Hole
IRFR110TRLPBF

IRFR110TRLPBF

MOSFET N-CH 100V 4.3A DPAK

Vishay Siliconix
2,976 -

RFQ

IRFR110TRLPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 100 V 4.3A (Tc) 10V 540mOhm @ 2.6A, 10V 4V @ 250µA 8.3 nC @ 10 V ±20V 180 pF @ 25 V - 25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFR210TRRPBF

IRFR210TRRPBF

MOSFET N-CH 200V 2.6A DPAK

Vishay Siliconix
2,940 -

RFQ

IRFR210TRRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 200 V 2.6A (Tc) 10V 1.5Ohm @ 1.6A, 10V 4V @ 250µA 8.2 nC @ 10 V ±20V 140 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SUD23N06-31-T4-GE3

SUD23N06-31-T4-GE3

MOSFET N-CH 60V 21.4A TO252

Vishay Siliconix
3,978 -

RFQ

SUD23N06-31-T4-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 60 V 21.4A (Tc) 4.5V, 10V 31mOhm @ 15A, 10V 3V @ 250µA 17 nC @ 10 V ±20V 670 pF @ 25 V - 5.7W (Ta), 31.25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIRA52DP-T1-RE3

SIRA52DP-T1-RE3

MOSFET N-CH 40V 60A PPAK SO-8

Vishay Siliconix
3,069 -

RFQ

Tape & Reel (TR) TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 40 V 60A (Tc) 4.5V, 10V 1.7mOhm @ 15A, 10V 2.4V @ 250µA 150 nC @ 10 V +20V, -16V 7150 pF @ 20 V - 48W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIJA52ADP-T1-GE3

SIJA52ADP-T1-GE3

MOSFET N-CH 40V 41.6A/131A PPAK

Vishay Siliconix
3,410 -

RFQ

SIJA52ADP-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 40 V 41.6A (Ta), 131A (Tc) 4.5V, 10V 1.63mOhm @ 15A, 10V 2.4V @ 250µA 100 nC @ 10 V +20V, -16V 5500 pF @ 20 V - 4.8W (Ta), 48W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI2343DS-T1-BE3

SI2343DS-T1-BE3

P-CHANNEL 30-V (D-S) MOSFET

Vishay Siliconix
2,500 -

RFQ

SI2343DS-T1-BE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 30 V 3.1A (Ta) 4.5V, 10V 53mOhm @ 4A, 10V 3V @ 250µA 21 nC @ 10 V ±20V 540 pF @ 15 V - 750mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI3469DV-T1-BE3

SI3469DV-T1-BE3

P-CHANNEL 20-V (D-S) MOSFET

Vishay Siliconix
5,690 -

RFQ

SI3469DV-T1-BE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 20 V 5A (Ta) 4.5V, 10V 30mOhm @ 6.7A, 10V 3V @ 250µA 30 nC @ 10 V ±20V - - 1.14W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI1467DH-T1-BE3

SI1467DH-T1-BE3

MOSFET P-CH 20V 3A/2.7A SC70-6

Vishay Siliconix
3,000 -

RFQ

SI1467DH-T1-BE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 20 V 3A (Ta), 2.7A (Tc) - 90mOhm @ 2A, 4.5V 1V @ 250µA 13.5 nC @ 4.5 V ±8V 561 pF @ 10 V - 1.5W (Ta), 2.78W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SISA14BDN-T1-GE3

SISA14BDN-T1-GE3

N-CHANNEL 30-V (D-S) MOSFET POWE

Vishay Siliconix
5,990 -

RFQ

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 30 V 21A (Ta), 72A (Tc) 4.5V, 10V 5.38mOhm @ 10A, 10V 2.2V @ 250µA 22 nC @ 10 V +20V, -16V 917 pF @ 15 V - 3.8W (Ta), 45W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIR862DP-T1-GE3

SIR862DP-T1-GE3

MOSFET N-CH 25V 50A PPAK SO-8

Vishay Siliconix
2,480 -

RFQ

SIR862DP-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 25 V 50A (Tc) 4.5V, 10V 2.8mOhm @ 15A, 10V 2.3V @ 250µA 90 nC @ 10 V ±20V 3800 pF @ 10 V - 5.2W (Ta), 69W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFR214PBF

IRFR214PBF

MOSFET N-CH 250V 2.2A DPAK

Vishay Siliconix
3,539 -

RFQ

IRFR214PBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 250 V 2.2A (Tc) 10V 2Ohm @ 1.3A, 10V 4V @ 250µA 8.2 nC @ 10 V ±20V 140 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFR214TRRPBF

IRFR214TRRPBF

MOSFET N-CH 250V 2.2A DPAK

Vishay Siliconix
2,426 -

RFQ

IRFR214TRRPBF

Ficha técnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 250 V 2.2A (Tc) 10V 2Ohm @ 1.3A, 10V 4V @ 250µA 8.2 nC @ 10 V ±20V 140 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFR214TRLPBF

IRFR214TRLPBF

MOSFET N-CH 250V 2.2A DPAK

Vishay Siliconix
3,515 -

RFQ

IRFR214TRLPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 250 V 2.2A (Tc) 10V 2Ohm @ 1.3A, 10V 4V @ 250µA 8.2 nC @ 10 V ±20V 140 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFR214TRPBF-BE3

IRFR214TRPBF-BE3

N-CHANNEL 250V

Vishay Siliconix
2,922 -

RFQ

IRFR214TRPBF-BE3

Ficha técnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 250 V 2.2A (Tc) 10V 2Ohm @ 1.3A, 10V 4V @ 250µA 8.2 nC @ 10 V ±20V 140 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI7230DN-T1-GE3

SI7230DN-T1-GE3

MOSFET N-CH 30V 9A PPAK 1212-8

Vishay Siliconix
3,616 -

RFQ

SI7230DN-T1-GE3

Ficha técnica

Tape & Reel (TR) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 9A (Ta) 4.5V, 10V 12mOhm @ 14A, 10V 3V @ 250µA 20 nC @ 5 V ±20V - - 1.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
Total 4747 Record«Prev1... 182183184185186187188189...238Next»
1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Inicio

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Producto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Teléfono

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Usuario