Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRFZ34L

IRFZ34L

MOSFET N-CH 60V 30A TO262-3

Vishay Siliconix
2,172 -

RFQ

IRFZ34L

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 30A (Tc) 10V 50mOhm @ 18A, 10V 4V @ 250µA 46 nC @ 10 V ±20V 1200 pF @ 25 V - 3.7W (Ta), 88W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFZ34S

IRFZ34S

MOSFET N-CH 60V 30A D2PAK

Vishay Siliconix
3,789 -

RFQ

IRFZ34S

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 30A (Tc) 10V 50mOhm @ 18A, 10V 4V @ 250µA 46 nC @ 10 V ±20V 1200 pF @ 25 V - 3.7W (Ta), 88W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFZ34STRL

IRFZ34STRL

MOSFET N-CH 60V 30A D2PAK

Vishay Siliconix
2,430 -

RFQ

IRFZ34STRL

Ficha técnica

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 30A (Tc) 10V 50mOhm @ 18A, 10V 4V @ 250µA 46 nC @ 10 V ±20V 1200 pF @ 25 V - 3.7W (Ta), 88W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFZ34STRR

IRFZ34STRR

MOSFET N-CH 60V 30A D2PAK

Vishay Siliconix
2,784 -

RFQ

IRFZ34STRR

Ficha técnica

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 30A (Tc) 10V 50mOhm @ 18A, 10V 4V @ 250µA 46 nC @ 10 V ±20V 1200 pF @ 25 V - 3.7W (Ta), 88W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFZ44L

IRFZ44L

MOSFET N-CH 60V 50A TO262-3

Vishay Siliconix
2,801 -

RFQ

IRFZ44L

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 10V 28mOhm @ 31A, 10V 4V @ 250µA 67 nC @ 10 V ±20V 1900 pF @ 25 V - 3.7W (Ta), 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFZ44STRL

IRFZ44STRL

MOSFET N-CH 60V 50A D2PAK

Vishay Siliconix
2,158 -

RFQ

IRFZ44STRL

Ficha técnica

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 10V 28mOhm @ 31A, 10V 4V @ 250µA 67 nC @ 10 V ±20V 1900 pF @ 25 V - 3.7W (Ta), 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFZ48L

IRFZ48L

MOSFET N-CH 60V 50A TO262-3

Vishay Siliconix
3,789 -

RFQ

IRFZ48L

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 10V 18mOhm @ 43A, 10V 4V @ 250µA 110 nC @ 10 V ±20V 2400 pF @ 25 V - 3.7W (Ta), 190W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFZ48S

IRFZ48S

MOSFET N-CH 60V 50A D2PAK

Vishay Siliconix
3,586 -

RFQ

IRFZ48S

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 10V 18mOhm @ 43A, 10V 4V @ 250µA 110 nC @ 10 V ±20V 2400 pF @ 25 V - 3.7W (Ta), 190W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFZ48STRL

IRFZ48STRL

MOSFET N-CH 60V 50A D2PAK

Vishay Siliconix
2,563 -

RFQ

IRFZ48STRL

Ficha técnica

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 10V 18mOhm @ 43A, 10V 4V @ 250µA 110 nC @ 10 V ±20V 2400 pF @ 25 V - 3.7W (Ta), 190W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFZ48STRR

IRFZ48STRR

MOSFET N-CH 60V 50A D2PAK

Vishay Siliconix
2,057 -

RFQ

IRFZ48STRR

Ficha técnica

Tape & Reel (TR) - Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 10V 18mOhm @ 43A, 10V 4V @ 250µA 110 nC @ 10 V ±20V 2400 pF @ 25 V - 3.7W (Ta), 190W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SI4459BDY-T1-GE3

SI4459BDY-T1-GE3

MOSFET P-CH 30V 20.5A/27.8A 8SO

Vishay Siliconix
773 -

RFQ

SI4459BDY-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active P-Channel MOSFET (Metal Oxide) 30 V 20.5A (Ta), 27.8A (Tc) 4.5V, 10V 4.9mOhm @ 15A, 10V 2.2V @ 250µA 84 nC @ 10 V +20V, -16V 3490 pF @ 15 V - 3.1W (Ta), 5.6W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI4894BDY-T1-GE3

SI4894BDY-T1-GE3

MOSFET N-CH 30V 8.9A 8SO

Vishay Siliconix
256 -

RFQ

SI4894BDY-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 8.9A (Ta) 4.5V, 10V 11mOhm @ 12A, 10V 3V @ 250µA 38 nC @ 10 V ±20V 1580 pF @ 15 V - 1.4W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SIR460DP-T1-GE3

SIR460DP-T1-GE3

MOSFET N-CH 30V 40A PPAK SO-8

Vishay Siliconix
185 -

RFQ

SIR460DP-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 40A (Tc) 4.5V, 10V 4.7mOhm @ 15A, 10V 2.4V @ 250µA 54 nC @ 10 V ±20V 2071 pF @ 15 V - 5W (Ta), 48W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFR310TRPBF-BE3

IRFR310TRPBF-BE3

MOSFET N-CH 400V 1.7A DPAK

Vishay Siliconix
152 -

RFQ

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 400 V 1.7A (Tc) 10V 3.6Ohm @ 1A, 10V 4V @ 250µA 12 nC @ 10 V ±20V 170 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRL2203STRL

IRL2203STRL

MOSFET N-CH 30V 100A D2PAK

Vishay Siliconix
3,267 -

RFQ

IRL2203STRL

Ficha técnica

Tape & Reel (TR) - Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 30 V 100A (Tc) 4V, 10V 7mOhm @ 60A, 10V 2.5V @ 250µA 110 nC @ 4.5 V ±20V 3500 pF @ 25 V - 3.8W (Ta), 130W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRL2203STRR

IRL2203STRR

MOSFET N-CH 30V 100A D2PAK

Vishay Siliconix
2,212 -

RFQ

IRL2203STRR

Ficha técnica

Tape & Reel (TR) - Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 30 V 100A (Tc) 4V, 10V 7mOhm @ 60A, 10V 2.5V @ 250µA 110 nC @ 4.5 V ±20V 3500 pF @ 25 V - 3.8W (Ta), 130W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRL3102L

IRL3102L

MOSFET N-CH 20V 61A TO262-3

Vishay Siliconix
3,436 -

RFQ

IRL3102L

Ficha técnica

Tube - Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 20 V 61A (Tc) 4.5V, 7V 13mOhm @ 37A, 7V 700mV @ 250µA (Min) 58 nC @ 4.5 V ±10V 2500 pF @ 15 V - 89W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRL3103D1STRR

IRL3103D1STRR

MOSFET N-CH 30V 64A D2PAK

Vishay Siliconix
2,701 -

RFQ

Tape & Reel (TR) FETKY™ Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 30 V 64A (Tc) - 14mOhm @ 34A, 10V 1V @ 250µA 43 nC @ 4.5 V - 1900 pF @ 25 V - - - Surface Mount
IRL3202L

IRL3202L

MOSFET N-CH 20V 48A TO262-3

Vishay Siliconix
2,187 -

RFQ

IRL3202L

Ficha técnica

Tube - Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 20 V 48A (Tc) 4.5V, 7V 16mOhm @ 29A, 7V 700mV @ 250µA (Min) 43 nC @ 4.5 V ±10V 2000 pF @ 15 V - 69W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRL3302L

IRL3302L

MOSFET N-CH 20V 39A TO262-3

Vishay Siliconix
3,511 -

RFQ

IRL3302L

Ficha técnica

Tube - Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 20 V 39A (Tc) 4.5V, 7V 20mOhm @ 23A, 7V 700mV @ 250µA (Min) 31 nC @ 4.5 V ±10V 1300 pF @ 15 V - 57W (Tc) -55°C ~ 150°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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