Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRL3303D1STRR

IRL3303D1STRR

MOSFET N-CH 30V 38A D2PAK

Vishay Siliconix
2,467 -

RFQ

IRL3303D1STRR

Ficha técnica

Tape & Reel (TR) - Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 30 V 38A (Tc) 4.5V, 10V 26mOhm @ 20A, 10V 1V @ 250µA 26 nC @ 4.5 V ±16V 870 pF @ 25 V - 68W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRL3402L

IRL3402L

MOSFET N-CH 20V 85A TO262-3

Vishay Siliconix
3,708 -

RFQ

IRL3402L

Ficha técnica

Tube - Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 20 V 85A (Tc) 4.5V, 7V 8mOhm @ 51A, 7V 700mV @ 250µA (Min) 78 nC @ 4.5 V ±10V 3300 pF @ 15 V - 110W (Tc) -55°C ~ 150°C (TJ) Through Hole
SI7101DN-T1-GE3

SI7101DN-T1-GE3

MOSFET P-CH 30V 35A PPAK 1212-8

Vishay Siliconix
2,449 -

RFQ

SI7101DN-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 30 V 35A (Tc) 4.5V, 10V 7.2mOhm @ 15A, 10V 2.5V @ 250µA 102 nC @ 10 V ±25V 3595 pF @ 15 V - 3.7W (Ta), 52W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI7465DP-T1-E3

SI7465DP-T1-E3

MOSFET P-CH 60V 3.2A PPAK SO-8

Vishay Siliconix
2,258 -

RFQ

SI7465DP-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 60 V 3.2A (Ta) 4.5V, 10V 64mOhm @ 5A, 10V 3V @ 250µA 40 nC @ 10 V ±20V - - 1.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SIJ420DP-T1-GE3

SIJ420DP-T1-GE3

MOSFET N-CH 20V 50A PPAK SO-8

Vishay Siliconix
500 -

RFQ

SIJ420DP-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 50A (Tc) 4.5V, 10V 2.6mOhm @ 15A, 10V 2.4V @ 250µA 90 nC @ 10 V ±20V 3630 pF @ 10 V - 4.8W (Ta), 62.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFBC20PBF-BE3

IRFBC20PBF-BE3

MOSFET N-CH 600V 2.2A TO220AB

Vishay Siliconix
987 -

RFQ

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 2.2A (Tc) 10V 4.4Ohm @ 1.3A, 10V 4V @ 250µA 18 nC @ 10 V ±20V 350 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRL3502L

IRL3502L

MOSFET N-CH 20V 110A TO262-3

Vishay Siliconix
2,044 -

RFQ

IRL3502L

Ficha técnica

Tube - Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 20 V 110A (Tc) 4.5V, 7V 7mOhm @ 64A, 7V 700mV @ 250µA (Min) 110 nC @ 4.5 V ±10V 4700 pF @ 15 V - 140W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRL510L

IRL510L

MOSFET N-CH 100V 5.6A TO262-3

Vishay Siliconix
2,741 -

RFQ

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 100 V 5.6A (Tc) 4V, 5V 540mOhm @ 3.4A, 5V 2V @ 250µA 6.1 nC @ 5 V ±10V 250 pF @ 25 V - - -55°C ~ 175°C (TJ) Through Hole
IRL510STRL

IRL510STRL

MOSFET N-CH 100V 5.6A D2PAK

Vishay Siliconix
3,489 -

RFQ

IRL510STRL

Ficha técnica

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 100 V 5.6A (Tc) 4V, 5V 540mOhm @ 3.4A, 5V 2V @ 250µA 6.1 nC @ 5 V ±10V 250 pF @ 25 V - 3.7W (Ta), 43W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRL510STRR

IRL510STRR

MOSFET N-CH 100V 5.6A D2PAK

Vishay Siliconix
3,221 -

RFQ

IRL510STRR

Ficha técnica

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 100 V 5.6A (Tc) 4V, 5V 540mOhm @ 3.4A, 5V 2V @ 250µA 6.1 nC @ 5 V ±10V 250 pF @ 25 V - 3.7W (Ta), 43W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRL520L

IRL520L

MOSFET N-CH 100V 9.2A TO262-3

Vishay Siliconix
3,637 -

RFQ

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 100 V 9.2A (Tc) 4V, 5V 270mOhm @ 5.5A, 5V 2V @ 250µA 12 nC @ 5 V ±10V 490 pF @ 25 V - 60W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRL520S

IRL520S

MOSFET N-CH 100V 9.2A D2PAK

Vishay Siliconix
3,705 -

RFQ

IRL520S

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 100 V 9.2A (Tc) 4V, 5V 270mOhm @ 5.5A, 5V 2V @ 250µA 12 nC @ 5 V ±10V 490 pF @ 25 V - 3.7W (Ta), 60W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRL520STRL

IRL520STRL

MOSFET N-CH 100V 9.2A D2PAK

Vishay Siliconix
2,956 -

RFQ

IRL520STRL

Ficha técnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 100 V 9.2A (Tc) 4V, 5V 270mOhm @ 5.5A, 5V 2V @ 250µA 12 nC @ 5 V ±10V 490 pF @ 25 V - 3.7W (Ta), 60W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRL520STRR

IRL520STRR

MOSFET N-CH 100V 9.2A D2PAK

Vishay Siliconix
3,666 -

RFQ

IRL520STRR

Ficha técnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 100 V 9.2A (Tc) 4V, 5V 270mOhm @ 5.5A, 5V 2V @ 250µA 12 nC @ 5 V ±10V 490 pF @ 25 V - 3.7W (Ta), 60W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRL530L

IRL530L

MOSFET N-CH 100V 15A TO262-3

Vishay Siliconix
3,459 -

RFQ

IRL530L

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 100 V 15A (Tc) 4V, 5V 160mOhm @ 9A, 5V 2V @ 250µA 28 nC @ 5 V ±10V 930 pF @ 25 V - - -55°C ~ 175°C (TJ) Through Hole
IRL530S

IRL530S

MOSFET N-CH 100V 15A D2PAK

Vishay Siliconix
2,301 -

RFQ

IRL530S

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 100 V 15A (Tc) 4V, 5V 160mOhm @ 9A, 5V 2V @ 250µA 28 nC @ 5 V ±10V 930 pF @ 25 V - 3.7W (Ta), 88W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRL530STRL

IRL530STRL

MOSFET N-CH 100V 15A D2PAK

Vishay Siliconix
3,124 -

RFQ

IRL530STRL

Ficha técnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 100 V 15A (Tc) 4V, 5V 160mOhm @ 9A, 5V 2V @ 250µA 28 nC @ 5 V ±10V 930 pF @ 25 V - 3.7W (Ta), 88W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRL540L

IRL540L

MOSFET N-CH 100V 28A TO262-3

Vishay Siliconix
2,720 -

RFQ

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 100 V 28A (Tc) 4V, 5V 77mOhm @ 17A, 5V - 64 nC @ 5 V ±10V 2200 pF @ 25 V - - - Through Hole
IRL540STRL

IRL540STRL

MOSFET N-CH 100V 28A D2PAK

Vishay Siliconix
2,977 -

RFQ

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 100 V 28A (Tc) 4V, 5V 77mOhm @ 17A, 5V 2V @ 250µA 64 nC @ 5 V ±10V 2200 pF @ 25 V - 3.7W (Ta), 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRL540STRR

IRL540STRR

MOSFET N-CH 100V 28A D2PAK

Vishay Siliconix
2,204 -

RFQ

IRL540STRR

Ficha técnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 100 V 28A (Tc) 4V, 5V 77mOhm @ 17A, 5V 2V @ 250µA 64 nC @ 5 V ±10V 2200 pF @ 25 V - 3.7W (Ta), 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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1800+ Fabricantes en todo el mundo
15,000+
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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