Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SI5441BDC-T1-GE3

SI5441BDC-T1-GE3

MOSFET P-CH 20V 4.4A 1206-8

Vishay Siliconix
3,251 -

RFQ

SI5441BDC-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 20 V 4.4A (Ta) 2.5V, 4.5V 45mOhm @ 4.4A, 4.5V 1.4V @ 250µA 22 nC @ 4.5 V ±12V - - 1.3W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SIRA58ADP-T1-RE3

SIRA58ADP-T1-RE3

MOSFET N-CH 40V 32.3A/109A PPAK

Vishay Siliconix
2,228 -

RFQ

SIRA58ADP-T1-RE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 40 V 32.3A (Ta), 109A (Tc) 4.5V, 10V 2.65mOhm @ 15A, 10V 2.4V @ 250µA 61 nC @ 10 V +20V, -16V 3030 pF @ 20 V - 5W (Ta), 56.8W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIRA72DP-T1-GE3

SIRA72DP-T1-GE3

MOSFET N-CH 40V 60A PPAK SO-8

Vishay Siliconix
3,136 -

RFQ

SIRA72DP-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 40 V 60A (Tc) 4.5V, 10V 3.5mOhm @ 10A, 10V 2.4V @ 250µA 30 nC @ 4.5 V +20V, -16V 3240 pF @ 20 V - 56.8W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIR624DP-T1-RE3

SIR624DP-T1-RE3

MOSFET N-CH 200V 5.7A/18.6A PPAK

Vishay Siliconix
3,218 -

RFQ

SIR624DP-T1-RE3

Ficha técnica

Tape & Reel (TR) ThunderFET® Active N-Channel MOSFET (Metal Oxide) 200 V 5.7A (Ta), 18.6A (Tc) 7.5V, 10V 60mOhm @ 10A, 10V 4V @ 250µA 30 nC @ 10 V ±20V 1110 pF @ 100 V - 5W (Ta), 52W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHD2N80AE-GE3

SIHD2N80AE-GE3

MOSFET N-CH 800V 2.9A DPAK

Vishay Siliconix
2,981 -

RFQ

SIHD2N80AE-GE3

Ficha técnica

Tube E Active N-Channel MOSFET (Metal Oxide) 800 V 2.9A (Tc) 10V 2.9Ohm @ 500mA, 10V 4V @ 250µA 10.5 nC @ 10 V ±30V 180 pF @ 100 V - 62.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHU5N50D-E3

SIHU5N50D-E3

MOSFET N-CH 500V 5.3A TO251AA

Vishay Siliconix
3,956 -

RFQ

SIHU5N50D-E3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 5.3A (Tc) 10V 1.5Ohm @ 2.5A, 10V 5V @ 250µA 20 nC @ 10 V ±30V 325 pF @ 100 V - 104W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHF520STRL-GE3

SIHF520STRL-GE3

MOSFET N-CH 100V 9.2A D2PAK

Vishay Siliconix
3,631 -

RFQ

SIHF520STRL-GE3

Ficha técnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 100 V 9.2A (Tc) 10V 270mOhm @ 5.5A, 10V 4V @ 250µA 16 nC @ 10 V ±20V 360 pF @ 25 V - 3.7W (Ta), 60W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SIHF520STRR-GE3

SIHF520STRR-GE3

MOSFET N-CH 100V 9.2A D2PAK

Vishay Siliconix
2,335 -

RFQ

SIHF520STRR-GE3

Ficha técnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 100 V 9.2A (Tc) 10V 270mOhm @ 5.5A, 10V 4V @ 250µA 16 nC @ 10 V ±20V 360 pF @ 25 V - 3.7W (Ta), 60W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SI7804DN-T1-E3

SI7804DN-T1-E3

MOSFET N-CH 30V 6.5A PPAK1212-8

Vishay Siliconix
2,788 -

RFQ

SI7804DN-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 6.5A (Ta) 4.5V, 10V 18.5mOhm @ 10A, 10V 1.8V @ 250µA 13 nC @ 5 V ±20V - - 1.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI7804DN-T1-GE3

SI7804DN-T1-GE3

MOSFET N-CH 30V 6.5A PPAK1212-8

Vishay Siliconix
3,939 -

RFQ

SI7804DN-T1-GE3

Ficha técnica

Tape & Reel (TR) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 6.5A (Ta) 4.5V, 10V 18.5mOhm @ 10A, 10V 1.8V @ 250µA 13 nC @ 5 V ±20V - - 1.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SISS40DN-T1-GE3

SISS40DN-T1-GE3

MOSFET N-CH 100V 36.5A PPAK

Vishay Siliconix
2,308 -

RFQ

SISS40DN-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) ThunderFET® Active N-Channel MOSFET (Metal Oxide) 100 V 36.5A (Tc) 6V, 10V 21mOhm @ 10A, 10V 3.5V @ 250µA 24 nC @ 10 V ±20V 845 pF @ 50 V - 3.7W (Ta), 52W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIR670DP-T1-GE3

SIR670DP-T1-GE3

MOSFET N-CH 60V 60A PPAK SO-8

Vishay Siliconix
3,594 -

RFQ

SIR670DP-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 60 V 60A (Tc) 4.5V, 10V 4.8mOhm @ 20A, 10V 2.8V @ 250µA 63 nC @ 10 V ±20V 2815 pF @ 30 V - 5W (Ta), 56.8W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SQJ460AEP-T2_GE3

SQJ460AEP-T2_GE3

MOSFET N-CH 60V 58A PPAK SO-8

Vishay Siliconix
3,882 -

RFQ

SQJ460AEP-T2_GE3

Ficha técnica

Tape & Reel (TR) Automotive, AEC-Q101, TrenchFET® Active N-Channel MOSFET (Metal Oxide) 60 V 58A (Tc) 4.5V, 10V 8.7mOhm @ 10.7A, 10V 2.5V @ 250µA 106 nC @ 10 V ±20V 2654 pF @ 30 V - 68W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SIRA54DP-T1-GE3

SIRA54DP-T1-GE3

MOSFET N-CH 40V 60A PPAK SO-8

Vishay Siliconix
3,677 -

RFQ

SIRA54DP-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 40 V 60A (Tc) 4.5V, 10V 2.35mOhm @ 15A, 10V 2.3V @ 250µA 48 nC @ 4.5 V +20V, -16V 5300 pF @ 20 V - 36.7W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIRA90DP-T1-GE3

SIRA90DP-T1-GE3

MOSFET N-CH 30V 100A PPAK SO-8

Vishay Siliconix
3,967 -

RFQ

SIRA90DP-T1-GE3

Ficha técnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 30 V 100A (Tc) 4.5V, 10V 0.8mOhm @ 20A, 10V 2V @ 250µA 153 nC @ 10 V +20V, -16V 10180 pF @ 15 V - 104W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI1416EDH-T1-BE3

SI1416EDH-T1-BE3

MOSFET N-CH 30V 3.9A/3.9A SC70-6

Vishay Siliconix
3,000 -

RFQ

SI1416EDH-T1-BE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 3.9A (Ta), 3.9A (Tc) - 58mOhm @ 3.1A, 10V 1.4V @ 250µA 12 nC @ 10 V ±12V - - 1.56W (Ta), 2.8W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIB4316EDK-T1-GE3

SIB4316EDK-T1-GE3

N-CHANNEL 30-V (D-S) MOSFET POWE

Vishay Siliconix
9,050 -

RFQ

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 4.5A (Ta), 6A (Tc) 2.5V, 10V 57mOhm @ 4A, 10V 1.4V @ 250µA 12 nC @ 10 V ±12V - - 1.9W (Ta), 10W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SQJA46EP-T2_GE3

SQJA46EP-T2_GE3

MOSFET N-CH 40V 60A PPAK SO-8

Vishay Siliconix
2,919 -

RFQ

SQJA46EP-T2_GE3

Ficha técnica

Tape & Reel (TR) Automotive, AEC-Q101, TrenchFET® Active N-Channel MOSFET (Metal Oxide) 40 V 60A (Tc) 10V 3mOhm @ 10A, 10V 3.5V @ 250µA 105 nC @ 10 V ±20V 5000 pF @ 25 V - 68W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SIB4317EDK-T1-GE3

SIB4317EDK-T1-GE3

P-CHANNEL 30-V (D-S) MOSFET POWE

Vishay Siliconix
12,000 -

RFQ

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 30 V 4.3A (Ta), 4.5A (Tc) 2.5V, 10V 65mOhm @ 3A, 10V 1.3V @ 250µA 23 nC @ 10 V ±12V 600 pF @ 15 V - 1.95W (Ta), 10W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI3483DDV-T1-BE3

SI3483DDV-T1-BE3

P-CHANNEL 30-V (D-S) MOSFET

Vishay Siliconix
5,525 -

RFQ

SI3483DDV-T1-BE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active P-Channel MOSFET (Metal Oxide) 30 V 6.4A (Ta), 8A (Tc) 4.5V, 10V 31.2mOhm @ 5A, 10V 2.2V @ 250µA 14.5 nC @ 10 V +16V, -20V 580 pF @ 15 V - 2W (Ta), 3W (Tc) -55°C ~ 150°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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