Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SQ7414AENW-T1_GE3

SQ7414AENW-T1_GE3

MOSFET N-CH 60V 18A PPAK1212-8

Vishay Siliconix
2,489 -

RFQ

SQ7414AENW-T1_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 18A (Tc) 4.5V, 10V 23mOhm @ 8.7A, 10V 2.5V @ 250µA 25 nC @ 10 V ±20V 1590 pF @ 30 V - 62W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SQS401ENW-T1_GE3

SQS401ENW-T1_GE3

MOSFET P-CH 40V 16A PPAK1212-8

Vishay Siliconix
2,550 -

RFQ

SQS401ENW-T1_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Obsolete P-Channel MOSFET (Metal Oxide) 40 V 16A (Tc) 4.5V, 10V 29mOhm @ 12A, 10V 2.5V @ 250µA 21.2 nC @ 4.5 V ±20V 1875 pF @ 20 V - 62.5W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFSL9N60APBF

IRFSL9N60APBF

MOSFET N-CH 600V 9.2A I2PAK

Vishay Siliconix
457 -

RFQ

IRFSL9N60APBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 9.2A (Tc) 10V 750mOhm @ 5.5A, 10V 4V @ 250µA 49 nC @ 10 V ±30V 1400 pF @ 25 V - 170W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFPC40PBF

IRFPC40PBF

MOSFET N-CH 600V 6.8A TO247-3

Vishay Siliconix
500 -

RFQ

IRFPC40PBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 6.8A (Tc) 10V 1.2Ohm @ 4.1A, 10V 4V @ 250µA 60 nC @ 10 V ±20V 1300 pF @ 25 V - 150W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHP21N80AE-GE3

SIHP21N80AE-GE3

MOSFET N-CH 800V 17.4A TO220AB

Vishay Siliconix
987 -

RFQ

SIHP21N80AE-GE3

Ficha técnica

Tube E Active N-Channel MOSFET (Metal Oxide) 800 V 17.4A (Tc) 10V 235mOhm @ 11A, 10V 4V @ 250µA 72 nC @ 10 V ±30V 1388 pF @ 100 V - 32W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFBC40ASPBF

IRFBC40ASPBF

MOSFET N-CH 600V 6.2A D2PAK

Vishay Siliconix
484 -

RFQ

IRFBC40ASPBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 6.2A (Tc) 10V 1.2Ohm @ 3.7A, 10V 4V @ 250µA 42 nC @ 10 V ±30V 1036 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHG21N60EF-GE3

SIHG21N60EF-GE3

MOSFET N-CH 600V 21A TO247AC

Vishay Siliconix
118 -

RFQ

SIHG21N60EF-GE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 21A (Tc) 10V 176mOhm @ 11A, 10V 4V @ 250µA 84 nC @ 10 V ±30V 2030 pF @ 100 V - 227W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHG21N80AE-GE3

SIHG21N80AE-GE3

MOSFET N-CH 800V 17.4A TO247AC

Vishay Siliconix
2,025 -

RFQ

SIHG21N80AE-GE3

Ficha técnica

Tube E Active N-Channel MOSFET (Metal Oxide) 800 V 17.4A (Tc) 10V 235mOhm @ 11A, 10V 4V @ 250µA 72 nC @ 10 V ±30V 1388 pF @ 100 V - 32W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHG125N60EF-GE3

SIHG125N60EF-GE3

MOSFET N-CH 600V 25A TO247AC

Vishay Siliconix
545 -

RFQ

Tube EF Active N-Channel MOSFET (Metal Oxide) 600 V 25A (Tc) 10V 125mOhm @ 12A, 10V 5V @ 250µA 47 nC @ 10 V ±30V 1533 pF @ 100 V - 179W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHF12N50C-E3

SIHF12N50C-E3

MOSFET N-CH 500V 12A TO220

Vishay Siliconix
997 -

RFQ

SIHF12N50C-E3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 12A (Tc) 10V 555mOhm @ 4A, 10V 5V @ 250µA 48 nC @ 10 V ±30V 1375 pF @ 25 V - 36W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF730BPBF

IRF730BPBF

MOSFET N-CH 400V 6A TO220AB

Vishay Siliconix
2,958 -

RFQ

IRF730BPBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 400 V 6A (Tc) 10V 1Ohm @ 3A, 10V 5V @ 250µA 18 nC @ 10 V ±30V 311 pF @ 100 V - 104W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF9610STRRPBF

IRF9610STRRPBF

N-CHANNEL200V

Vishay Siliconix
3,555 -

RFQ

IRF9610STRRPBF

Ficha técnica

Tape & Reel (TR) - Active P-Channel MOSFET (Metal Oxide) 200 V 1.8A (Tc) 10V 3Ohm @ 900mA, 10V 4V @ 250µA 11 nC @ 10 V ±20V 170 pF @ 25 V - 3W (Ta), 20W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SISS30DN-T1-GE3

SISS30DN-T1-GE3

MOSFET N-CH 80V 15.9A/54.7A PPAK

Vishay Siliconix
2,004 -

RFQ

SISS30DN-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 80 V 15.9A (Ta), 54.7A (Tc) 7.5V, 10V 8.25mOhm @ 10A, 10V 3.8V @ 250µA 40 nC @ 10 V ±20V 1666 pF @ 10 V - 4.8W (Ta), 57W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SQD30N05-20L_T4GE3

SQD30N05-20L_T4GE3

MOSFET N-CH 55V 30A TO252AA

Vishay Siliconix
2,655 -

RFQ

SQD30N05-20L_T4GE3

Ficha técnica

Tape & Reel (TR) Automotive, AEC-Q101, TrenchFET® Active N-Channel MOSFET (Metal Oxide) 55 V 30A (Tc) 4.5V, 10V 20mOhm @ 20A, 10V 2.5V @ 250µA 18 nC @ 5 V ±20V 1175 pF @ 25 V - 50W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SISA34DN-T1-GE3

SISA34DN-T1-GE3

MOSFET N-CH 30V 40A PPAK1212-8

Vishay Siliconix
2,195 -

RFQ

SISA34DN-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Obsolete N-Channel MOSFET (Metal Oxide) 30 V 40A (Tc) 4.5V, 10V 6.7mOhm @ 10A, 10V 2.4V @ 250µA 12 nC @ 4.5 V +20V, -16V 1100 pF @ 15 V - 20.8W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHP16N50C-E3

SIHP16N50C-E3

MOSFET N-CH 500V 16A TO220AB

Vishay Siliconix
963 -

RFQ

SIHP16N50C-E3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 16A (Tc) 10V 380mOhm @ 8A, 10V 5V @ 250µA 68 nC @ 10 V ±30V 1900 pF @ 25 V - 250W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIR618DP-T1-GE3

SIR618DP-T1-GE3

MOSFET N-CH 200V 14.2A PPAK SO-8

Vishay Siliconix
3,476 -

RFQ

SIR618DP-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) ThunderFET® Active N-Channel MOSFET (Metal Oxide) 200 V 14.2A (Tc) 7.5V, 10V 95mOhm @ 8A, 10V 4V @ 250µA 16 nC @ 7.5 V ±20V 740 pF @ 100 V - 48W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHP35N60EF-GE3

SIHP35N60EF-GE3

MOSFET N-CH 600V 32A TO220AB

Vishay Siliconix
890 -

RFQ

SIHP35N60EF-GE3

Ficha técnica

Tube EF Active N-Channel MOSFET (Metal Oxide) 600 V 32A (Tc) 10V 97mOhm @ 17A, 10V 4V @ 250µA 134 nC @ 10 V ±30V 2568 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFP450LCPBF

IRFP450LCPBF

MOSFET N-CH 500V 14A TO247-3

Vishay Siliconix
484 -

RFQ

IRFP450LCPBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 14A (Tc) 10V 400mOhm @ 8.4A, 10V 4V @ 250µA 74 nC @ 10 V ±30V 2200 pF @ 25 V - 190W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHG73N60AE-GE3

SIHG73N60AE-GE3

MOSFET N-CH 600V 60A TO247AC

Vishay Siliconix
216 -

RFQ

SIHG73N60AE-GE3

Ficha técnica

Tube E Active N-Channel MOSFET (Metal Oxide) 600 V 60A (Tc) 10V 40mOhm @ 36.5A, 10V 4V @ 250µA 394 nC @ 10 V ±30V 5500 pF @ 100 V - 417W (Tc) -55°C ~ 150°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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