Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SI4436DY-T1-GE3

SI4436DY-T1-GE3

MOSFET N-CH 60V 8A 8SO

Vishay Siliconix
2,623 -

RFQ

SI4436DY-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 60 V 8A (Tc) 4.5V, 10V 36mOhm @ 4.6A, 10V 2.5V @ 250µA 32 nC @ 10 V ±20V 1100 pF @ 30 V - 2.5W (Ta), 5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIR474DP-T1-GE3

SIR474DP-T1-GE3

MOSFET N-CH 30V 20A PPAK SO-8

Vishay Siliconix
618 -

RFQ

SIR474DP-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 20A (Tc) 10V 9.5mOhm @ 10A, 10V 2.2V @ 250µA 27 nC @ 10 V ±20V 985 pF @ 15 V - 3.9W (Ta), 29.8W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFS9N60ATRL

IRFS9N60ATRL

MOSFET N-CH 600V 9.2A D2PAK

Vishay Siliconix
2,326 -

RFQ

IRFS9N60ATRL

Ficha técnica

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 9.2A (Tc) 10V 750mOhm @ 5.5A, 10V 4V @ 250µA 49 nC @ 10 V ±30V 1400 pF @ 25 V - 170W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFS9N60ATRR

IRFS9N60ATRR

MOSFET N-CH 600V 9.2A D2PAK

Vishay Siliconix
3,038 -

RFQ

IRFS9N60ATRR

Ficha técnica

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 9.2A (Tc) 10V 750mOhm @ 5.5A, 10V 4V @ 250µA 49 nC @ 10 V ±30V 1400 pF @ 25 V - 170W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFSL31N20DTRL

IRFSL31N20DTRL

MOSFET N-CH 200V 31A I2PAK

Vishay Siliconix
2,212 -

RFQ

IRFSL31N20DTRL

Ficha técnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 200 V 31A (Tc) 10V 82mOhm @ 18A, 10V 5.5V @ 250µA 110 nC @ 10 V ±30V 2370 pF @ 25 V - 3.1W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFSL31N20DTRR

IRFSL31N20DTRR

MOSFET N-CH 200V 31A I2PAK

Vishay Siliconix
3,946 -

RFQ

IRFSL31N20DTRR

Ficha técnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 200 V 31A (Tc) 10V 82mOhm @ 18A, 10V 5.5V @ 250µA 110 nC @ 10 V ±30V 2370 pF @ 25 V - 3.1W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFSL9N60ATRL

IRFSL9N60ATRL

MOSFET N-CH 600V 9.2A I2PAK

Vishay Siliconix
3,631 -

RFQ

IRFSL9N60ATRL

Ficha técnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 600 V 9.2A (Tc) 10V 750mOhm @ 5.5A, 10V 4V @ 250µA 49 nC @ 10 V ±30V 1400 pF @ 25 V - 170W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIS454DN-T1-GE3

SIS454DN-T1-GE3

MOSFET N-CH 20V 35A PPAK1212-8

Vishay Siliconix
9,629 -

RFQ

SIS454DN-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 20 V 35A (Tc) 4.5V, 10V 3.7mOhm @ 20A, 10V 2.2V @ 250µA 53 nC @ 10 V ±20V 1900 pF @ 10 V - 3.8W (Ta), 52W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIR186LDP-T1-RE3

SIR186LDP-T1-RE3

N-CHANNEL 60-V (D-S) MOSFET POWE

Vishay Siliconix
3,597 -

RFQ

SIR186LDP-T1-RE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 60 V 23.8A (Ta), 80.3A (Tc) 4.5V, 10V 4.4mOhm @ 15A, 10V 2.5V @ 250µA 48 nC @ 10 V ±20V 1980 pF @ 30 V - 5W (Ta), 57W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFSL9N60ATRR

IRFSL9N60ATRR

MOSFET N-CH 600V 9.2A I2PAK

Vishay Siliconix
2,873 -

RFQ

IRFSL9N60ATRR

Ficha técnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 600 V 9.2A (Tc) 10V 750mOhm @ 5.5A, 10V 4V @ 250µA 49 nC @ 10 V ±30V 1400 pF @ 25 V - 170W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFU010

IRFU010

MOSFET N-CH 50V 8.2A TO251AA

Vishay Siliconix
3,472 -

RFQ

IRFU010

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 50 V 8.2A (Tc) 10V 200mOhm @ 4.2A, 10V 4V @ 250µA 10 nC @ 10 V ±20V 250 pF @ 25 V - 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFU1N60A

IRFU1N60A

MOSFET N-CH 600V 1.4A TO251AA

Vishay Siliconix
2,740 -

RFQ

IRFU1N60A

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 1.4A (Tc) 10V 7Ohm @ 840mA, 10V 4V @ 250µA 14 nC @ 10 V ±30V 229 pF @ 25 V - 36W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFU9010

IRFU9010

MOSFET P-CH 50V 5.3A TO251AA

Vishay Siliconix
3,284 -

RFQ

IRFU9010

Ficha técnica

Tube - Obsolete P-Channel MOSFET (Metal Oxide) 50 V 5.3A (Tc) 10V 500mOhm @ 2.8A, 10V 4V @ 250µA 9.1 nC @ 10 V ±20V 240 pF @ 25 V - 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFZ10

IRFZ10

MOSFET N-CH 60V 10A TO220AB

Vishay Siliconix
2,203 -

RFQ

IRFZ10

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 10A (Tc) 10V 200mOhm @ 6A, 10V 4V @ 250µA 11 nC @ 10 V ±20V 300 pF @ 25 V - 43W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFZ14L

IRFZ14L

MOSFET N-CH 60V 10A TO262-3

Vishay Siliconix
3,159 -

RFQ

IRFZ14L

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 10A (Tc) 10V 200mOhm @ 6A, 10V 4V @ 250µA 11 nC @ 10 V ±20V 300 pF @ 25 V - 3.7W (Ta), 43W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFZ14STRL

IRFZ14STRL

MOSFET N-CH 60V 10A D2PAK

Vishay Siliconix
3,189 -

RFQ

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 10A (Tc) 10V 200mOhm @ 6A, 10V 4V @ 250µA 11 nC @ 10 V ±20V 300 pF @ 25 V - 3.7W (Ta), 43W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFZ14STRR

IRFZ14STRR

MOSFET N-CH 60V 10A D2PAK

Vishay Siliconix
2,469 -

RFQ

IRFZ14STRR

Ficha técnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 60 V 10A (Tc) 10V 200mOhm @ 6A, 10V 4V @ 250µA 11 nC @ 10 V ±20V 300 pF @ 25 V - 3.7W (Ta), 43W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFZ24L

IRFZ24L

MOSFET N-CH 60V 17A TO262-3

Vishay Siliconix
2,776 -

RFQ

IRFZ24L

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 17A (Tc) 10V 100mOhm @ 10A, 10V 4V @ 250µA 25 nC @ 10 V ±20V 640 pF @ 25 V - 3.7W (Ta), 60W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFZ24STRL

IRFZ24STRL

MOSFET N-CH 60V 17A D2PAK

Vishay Siliconix
2,759 -

RFQ

IRFZ24STRL

Ficha técnica

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 17A (Tc) 10V 100mOhm @ 10A, 10V 4V @ 250µA 25 nC @ 10 V ±20V 640 pF @ 25 V - 3.7W (Ta), 60W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFZ24STRR

IRFZ24STRR

MOSFET N-CH 60V 17A D2PAK

Vishay Siliconix
3,690 -

RFQ

IRFZ24STRR

Ficha técnica

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 17A (Tc) 10V 100mOhm @ 10A, 10V 4V @ 250µA 25 nC @ 10 V ±20V 640 pF @ 25 V - 3.7W (Ta), 60W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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