Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SFS9Z14

SFS9Z14

P-CHANNEL POWER MOSFET

Fairchild Semiconductor
2,994 -

RFQ

SFS9Z14

Ficha técnica

Bulk - Active P-Channel MOSFET (Metal Oxide) 60 V 5.3A (Tc) 10V 500mOhm @ 2.7A, 10V 4V @ 250µA 11 nC @ 10 V ±30V 350 pF @ 25 V - 24W (Tc) -55°C ~ 175°C (TJ) Through Hole
MGSF3433VT1

MGSF3433VT1

PFET TSOP6S 20V 0.098R TR

Motorola
2,800 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
SFR2955TF

SFR2955TF

P-CHANNEL POWER MOSFET

Fairchild Semiconductor
2,000 -

RFQ

SFR2955TF

Ficha técnica

Bulk - Active P-Channel MOSFET (Metal Oxide) 60 V 7.6A (Tc) 10V 300mOhm @ 3.8A, 10V 4V @ 250µA 19 nC @ 10 V ±20V 600 pF @ 25 V - 2.5W (Ta), 32W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFW820BTM

IRFW820BTM

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
1,574 -

RFQ

IRFW820BTM

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 500 V 2.5A (Tc) 10V 2.6Ohm @ 1.25A, 10V 4V @ 250µA 18 nC @ 10 V ±30V 610 pF @ 25 V - 3.13W (Ta), 49W (Tc) -55°C ~ 150°C (TJ) Surface Mount
HUFA76409D3S

HUFA76409D3S

MOSFET N-CH 60V 18A TO252AA

Fairchild Semiconductor
1,224 -

RFQ

HUFA76409D3S

Ficha técnica

Tube UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 60 V 18A (Tc) 4.5V, 10V 63mOhm @ 18A, 10V 3V @ 250µA 15 nC @ 10 V ±16V 485 pF @ 25 V - 49W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BUK7535-55A,127

BUK7535-55A,127

PFET, 35A I(D), 55V, 0.035OHM, 1

NXP USA Inc.
9,896 -

RFQ

BUK7535-55A,127

Ficha técnica

Tube TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 55 V 35A (Tc) 10V 35mOhm @ 20A, 10V 4V @ 1mA - ±20V 872 pF @ 25 V - 85W (Tc) -55°C ~ 175°C (TJ) Through Hole
2SJ243-T1-A

2SJ243-T1-A

MOSFET P-CH 30V 100MA SC75-3 USM

Renesas Electronics America Inc
1,618 -

RFQ

2SJ243-T1-A

Ficha técnica

Bulk - Obsolete P-Channel MOSFET (Metal Oxide) 30 V 100mA (Ta) - 25Ohm @ 10mA, 4V 2.3V @ 10µA - - 16 pF @ 5 V - - - Surface Mount
RQK0604IGDQA#H1

RQK0604IGDQA#H1

SMALL SIGNAL N-CHANNEL MOSFET

Renesas Electronics America Inc
9,675 -

RFQ

RQK0604IGDQA#H1

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
UPA620TT-E1-A

UPA620TT-E1-A

MOSFET N-CH 20V 5A 6WSOF

Renesas Electronics America Inc
8,285 -

RFQ

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 20 V 5A (Ta) - 38mOhm @ 2.5A, 4.5V 1.5V @ 1mA 5.5 nC @ 4 V - 450 pF @ 10 V - - - Surface Mount
HUFA76413D3S

HUFA76413D3S

MOSFET N-CH 60V 20A TO252AA

Fairchild Semiconductor
8,243 -

RFQ

HUFA76413D3S

Ficha técnica

Tube UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 60 V 20A (Tc) 4.5V, 10V 49mOhm @ 20A, 10V 3V @ 250µA 20 nC @ 10 V ±16V 645 pF @ 25 V - 60W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFS254BFP001

IRFS254BFP001

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
7,200 -

RFQ

IRFS254BFP001

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 250 V 16A (Tc) 10V 140mOhm @ 8A, 10V 4V @ 250µA 123 nC @ 10 V ±30V 3400 pF @ 25 V - 90W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFM210BTF

IRFM210BTF

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
7,025 -

RFQ

IRFM210BTF

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 200 V 770mA (Tc) 10V 1.5Ohm @ 390mA, 10V 4V @ 250µA 9.3 nC @ 10 V ±30V 225 pF @ 25 V - 2W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FQP5N20L

FQP5N20L

MOSFET N-CH 200V 4.5A TO220-3

Fairchild Semiconductor
5,950 -

RFQ

FQP5N20L

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 4.5A (Tc) 5V, 10V 1.2Ohm @ 2.25A, 10V 2V @ 250µA 6.2 nC @ 5 V ±20V 325 pF @ 25 V - 52W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQP3N25

FQP3N25

MOSFET N-CH 250V 2.8A TO220-3

Fairchild Semiconductor
5,900 -

RFQ

FQP3N25

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 250 V 2.8A (Tc) 10V 2.2Ohm @ 1.4A, 10V 5V @ 250µA 5.2 nC @ 10 V ±30V 170 pF @ 25 V - 45W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQPF7N10L

FQPF7N10L

MOSFET N-CH 100V 5.5A TO220F

Fairchild Semiconductor
5,887 -

RFQ

FQPF7N10L

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 5.5A (Tc) 5V, 10V 350mOhm @ 2.75A, 10V 2V @ 250µA 6 nC @ 5 V ±20V 290 pF @ 25 V - 23W (Tc) -55°C ~ 175°C (TJ) Through Hole
HUF76013P3

HUF76013P3

MOSFET N-CH 20V 20A TO220-3

Fairchild Semiconductor
5,326 -

RFQ

HUF76013P3

Ficha técnica

Tube UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 20 V 20A (Tc) 5V, 10V 22mOhm @ 20A, 10V 3V @ 250µA 17 nC @ 10 V ±20V 624 pF @ 20 V - 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQP9N08L

FQP9N08L

MOSFET N-CH 80V 9.3A TO220-3

Fairchild Semiconductor
5,169 -

RFQ

FQP9N08L

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 80 V 9.3A (Tc) 5V, 10V 210mOhm @ 4.65A, 10V 5V @ 250µA 6.1 nC @ 5 V ±20V 280 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) Through Hole
BUZ101L

BUZ101L

N-CHANNEL POWER MOSFET

Infineon Technologies
5,075 -

RFQ

BUZ101L

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
STD1063T4

STD1063T4

NFET DPAK SPCL 500V TR

onsemi
5,000 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
BSC8899N03MS

BSC8899N03MS

N-CHANNEL POWER MOSFET

Infineon Technologies
4,952 -

RFQ

BSC8899N03MS

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
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1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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