Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
CPH6434-TL-E

CPH6434-TL-E

N-CHANNEL SILICON MOSFET

Sanyo
2,982 -

RFQ

Bulk - Active N-Channel MOSFET (Metal Oxide) 30 V 6A (Ta) - 41mOhm @ 3A, 4V - 7 nC @ 4 V - 790 pF @ 10 V - 1.6W (Ta) 150°C (TJ) Surface Mount
IPS050N03LG

IPS050N03LG

N-CHANNEL POWER MOSFET

Infineon Technologies
1,500 -

RFQ

IPS050N03LG

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
MTD5N25ET4

MTD5N25ET4

N-CHANNEL POWER MOSFET

onsemi
9,960 -

RFQ

MTD5N25ET4

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
2SK3107-T1-A

2SK3107-T1-A

MOSFET N-CH 30V 100MA SC75-3 USM

Renesas Electronics America Inc
7,450 -

RFQ

2SK3107-T1-A

Ficha técnica

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 100mA (Ta) - 5Ohm @ 10mA, 10V 1.8V @ 10µA - - 9 pF @ 3 V - - - Surface Mount
2SK937Y5

2SK937Y5

N-CHANNEL SMALL SIGNAL MOSFET

onsemi
6,500 -

RFQ

2SK937Y5

Ficha técnica

Bulk * Obsolete - - - - - - - - - - - - - -
MTSF3N03HDR2

MTSF3N03HDR2

SMALL SIGNAL N-CHANNEL MOSFET

onsemi
5,750 -

RFQ

MTSF3N03HDR2

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
BSC090N03MSGXT

BSC090N03MSGXT

N-CHANNEL POWER MOSFET

Infineon Technologies
4,770 -

RFQ

BSC090N03MSGXT

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
MTD3N25E

MTD3N25E

N-CHANNEL POWER MOSFET

Motorola
4,500 -

RFQ

MTD3N25E

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
SFU9034TU

SFU9034TU

P-CHANNEL POWER MOSFET

Fairchild Semiconductor
4,477 -

RFQ

SFU9034TU

Ficha técnica

Bulk - Active P-Channel MOSFET (Metal Oxide) 60 V 14A (Tc) 10V 140mOhm @ 7A, 10V 4V @ 250µA 38 nC @ 10 V ±25V 1155 pF @ 25 V - 2.5W (Ta), 49W (Tc) -55°C ~ 150°C (TJ) Through Hole
SI6467DQ

SI6467DQ

P-CHANNEL MOSFET

Fairchild Semiconductor
3,230 -

RFQ

SI6467DQ

Ficha técnica

Bulk PowerTrench® Active P-Channel MOSFET (Metal Oxide) 20 V 9.2A (Ta) 1.8V, 4.5V 12mOhm @ 9.2A, 4.5V 1.5V @ 250µA 96 nC @ 4.5 V ±8V 5878 pF @ 10 V - 600mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
MMSF3350R2

MMSF3350R2

N-CHANNEL POWER MOSFET

onsemi
2,372 -

RFQ

MMSF3350R2

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
RQK0204TGDQAWS#H6

RQK0204TGDQAWS#H6

P CH MOS FET POWER SWITCHING

Renesas Electronics America Inc
1,995 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
BSO083N03MSG

BSO083N03MSG

N-CHANNEL POWER MOSFET

Infineon Technologies
1,690 -

RFQ

BSO083N03MSG

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IRFU430BTU

IRFU430BTU

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
6,609 -

RFQ

IRFU430BTU

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 500 V 3.5A (Tc) 10V 1.5Ohm @ 1.75A, 10V 4V @ 250µA 33 nC @ 10 V ±30V 1050 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Through Hole
IRFR110ATM

IRFR110ATM

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
5,325 -

RFQ

IRFR110ATM

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 100 V 4.7A (Ta) 10V 400mOhm @ 2.35A, 10V 4V @ 250µA 12 nC @ 10 V ±20V 240 pF @ 25 V - 2.5W (Ta), 20W (Tc) -55°C ~ 150°C (TJ) Surface Mount
HUF75617D3

HUF75617D3

MOSFET N-CH 100V 16A IPAK

Fairchild Semiconductor
5,222 -

RFQ

HUF75617D3

Ficha técnica

Tube UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 100 V 16A (Tc) 10V 90mOhm @ 16A, 10V 4V @ 250µA 39 nC @ 20 V ±20V 570 pF @ 25 V - 64W (Tc) -55°C ~ 175°C (TJ) Through Hole
BSC886N03LS G

BSC886N03LS G

N-CHANNEL POWER MOSFET

Infineon Technologies
5,000 -

RFQ

BSC886N03LS G

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
BSC886N03LSG

BSC886N03LSG

N-CHANNEL POWER MOSFET

Infineon Technologies
4,609 -

RFQ

BSC886N03LSG

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
RFP2P08

RFP2P08

P-CHANNEL POWER MOSFET

Harris Corporation
3,542 -

RFQ

RFP2P08

Ficha técnica

Bulk - Active P-Channel MOSFET (Metal Oxide) 80 V 2A (Tc) 10V 3.5Ohm @ 1A, 10V 4V @ 1mA - ±20V 150 pF @ 25 V - 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
RFP2N08

RFP2N08

N-CHANNEL, MOSFET

Harris Corporation
3,360 -

RFQ

RFP2N08

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 80 V 2A (Tc) 10V 1.05Ohm @ 2A, 5V 4V @ 250µA - ±20V 200 pF @ 25 V - 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
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1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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