Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
FQI2P25TU

FQI2P25TU

MOSFET P-CH 250V 2.3A I2PAK

Fairchild Semiconductor
1,000 -

RFQ

FQI2P25TU

Ficha técnica

Tube QFET® Obsolete P-Channel MOSFET (Metal Oxide) 250 V 2.3A (Tc) 10V 4Ohm @ 1.15A, 10V 5V @ 250µA 8.5 nC @ 10 V ±30V 250 pF @ 25 V - 3.13W (Ta), 52W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQI3P20TU

FQI3P20TU

MOSFET P-CH 200V 2.8A I2PAK

Fairchild Semiconductor
1,000 -

RFQ

FQI3P20TU

Ficha técnica

Tube QFET® Obsolete P-Channel MOSFET (Metal Oxide) 200 V 2.8A (Tc) 10V 2.7Ohm @ 1.4A, 10V 5V @ 250µA 8 nC @ 10 V ±30V 250 pF @ 25 V - 3.13W (Ta), 52W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQB16N25CTM

FQB16N25CTM

MOSFET N-CH 250V 15.6A D2PAK

Fairchild Semiconductor
845 -

RFQ

FQB16N25CTM

Ficha técnica

Bulk QFET® Obsolete N-Channel MOSFET (Metal Oxide) 250 V 15.6A (Tc) 10V 270mOhm @ 7.8A, 10V 4V @ 250µA 53.5 nC @ 10 V ±30V 1080 pF @ 25 V - 3.13W (Ta), 139W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SPA08N50C3

SPA08N50C3

N-CHANNEL POWER MOSFET

Infineon Technologies
720 -

RFQ

SPA08N50C3

Ficha técnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 560 V 7.6A (Tc) 10V 600mOhm @ 4.6A, 10V 3.9V @ 350µA 32 nC @ 10 V ±20V 750 pF @ 25 V - 32W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDU8874

FDU8874

MOSFET N-CH 30V 18A/116A IPAK

Fairchild Semiconductor
5,400 -

RFQ

FDU8874

Ficha técnica

Tube PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 18A (Ta), 116A (Tc) 4.5V, 10V 5.1mOhm @ 35A, 10V 2.5V @ 250µA 72 nC @ 10 V ±20V 2990 pF @ 15 V - 110W (Tc) -55°C ~ 175°C (TJ) Through Hole
RF1K4915696

RF1K4915696

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
2,500 -

RFQ

RF1K4915696

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 30 V 6.3A (Ta) 5V 30mOhm @ 6.3A, 5V 2V @ 250µA 65 nC @ 10 V ±10V 2030 pF @ 25 V - 2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF9522

IRF9522

P-CHANNEL POWER MOSFET

Harris Corporation
1,768 -

RFQ

IRF9522

Ficha técnica

Bulk - Active P-Channel MOSFET (Metal Oxide) 100 V 5A (Tc) 10V 800mOhm @ 3.5A, 10V 4V @ 250µA 22 nC @ 10 V ±20V 300 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) Through Hole
BUK7510-100B,127

BUK7510-100B,127

PFET, 75A I(D), 100V, 0.01OHM, 1

NXP USA Inc.
1,139 -

RFQ

BUK7510-100B,127

Ficha técnica

Tube TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 75A (Tc) 10V 10mOhm @ 25A, 10V 4V @ 1mA 80 nC @ 10 V ±20V 6773 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
NDB7052L

NDB7052L

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
800 -

RFQ

NDB7052L

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 50 V 75A (Tc) 5V, 10V 7.5mOhm @ 37.5A, 10V 2V @ 250µA 130 nC @ 5 V ±16V 4030 pF @ 25 V - 150W (Tc) -65°C ~ 175°C (TJ) Through Hole
TK7R0E08QM,S1X

TK7R0E08QM,S1X

UMOS10 TO-220AB 80V 7MOHM

Toshiba Semiconductor and Storage
212 -

RFQ

TK7R0E08QM,S1X

Ficha técnica

Tube U-MOSX-H Active N-Channel MOSFET (Metal Oxide) 80 V 64A (Tc) 6V, 10V 7mOhm @ 32A, 10V 3.5V @ 500µA 39 nC @ 10 V ±20V 2700 pF @ 40 V - 87W (Tc) 175°C Through Hole
IPP60R600P7

IPP60R600P7

N-CHANNEL POWER MOSFET

Infineon Technologies
500 -

RFQ

IPP60R600P7

Ficha técnica

Bulk - Active - - - - - - - - - - - - - -
IPI052NE7N3G

IPI052NE7N3G

N-CHANNEL POWER MOSFET

Infineon Technologies
396 -

RFQ

IPI052NE7N3G

Ficha técnica

Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 75 V 80A (Tc) 10V 5.2mOhm @ 80A, 10V 3.8V @ 91µA 68 nC @ 10 V ±20V 4750 pF @ 37.5 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
HAT2019R-EL-E

HAT2019R-EL-E

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
10,000 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
UPA1874GR-9JG-E1-A

UPA1874GR-9JG-E1-A

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
9,000 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
FDD6676

FDD6676

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
8,182 -

RFQ

FDD6676

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 30 V 78A (Ta) 4.5V, 10V 7.5mOhm @ 16.8A, 10V 3V @ 250µA 63 nC @ 5 V ±16V 5103 pF @ 15 V - 1.6W (Ta) -55°C ~ 175°C (TJ) Surface Mount
FDU8586

FDU8586

MOSFET N-CH 20V 35A IPAK

Fairchild Semiconductor
6,297 -

RFQ

FDU8586

Ficha técnica

Tube PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 35A (Tc) 4.5V, 10V 5.5mOhm @ 35A, 10V 2.5V @ 250µA 48 nC @ 10 V ±20V 2480 pF @ 10 V - 77W (Tc) -55°C ~ 175°C (TJ) Through Hole
UPA2749UT1A-E2-AY

UPA2749UT1A-E2-AY

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
6,000 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
HUFA76419S3S

HUFA76419S3S

MOSFET N-CH 60V 29A D2PAK

Fairchild Semiconductor
4,400 -

RFQ

HUFA76419S3S

Ficha técnica

Tube UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 60 V 29A (Tc) 4.5V, 10V 35mOhm @ 29A, 10V 3V @ 250µA 28 nC @ 10 V ±16V 900 pF @ 25 V - 75W (Tc) -55°C ~ 175°C (TJ) Surface Mount
UPA2749UT1A-E1-AY

UPA2749UT1A-E1-AY

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
3,000 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
2SK3634-AZ

2SK3634-AZ

MOSFET N-CH 200V 6A TO251

Renesas Electronics America Inc
2,991 -

RFQ

2SK3634-AZ

Ficha técnica

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 200 V 6A (Tc) - 600mOhm @ 3A, 10V 4.5V @ 1mA 9 nC @ 10 V - 270 pF @ 10 V - - - Through Hole
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1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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