Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
2SK2070-AZ

2SK2070-AZ

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
748 -

RFQ

2SK2070-AZ

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
SSW7N60BTM

SSW7N60BTM

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
697 -

RFQ

SSW7N60BTM

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 600 V 7A (Tc) 10V 1.2Ohm @ 3.5A, 10V 4V @ 250µA 50 nC @ 10 V ±30V 1800 pF @ 25 V - 3.13W (Ta), 147W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPP100N06S3L-04IN

IPP100N06S3L-04IN

N-CHANNEL POWER MOSFET

Infineon Technologies
500 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
FS5ASJ-06F-T13#B00

FS5ASJ-06F-T13#B00

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
8,430 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
IPP50R520CP

IPP50R520CP

N-CHANNEL POWER MOSFET

Infineon Technologies
8,144 -

RFQ

IPP50R520CP

Ficha técnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 500 V 7.1A (Tc) 10V 520mOhm @ 3.8A, 10V 3.5V @ 250µA 17 nC @ 10 V ±20V 680 pF @ 100 V - 66W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDP4030L

FDP4030L

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
6,570 -

RFQ

FDP4030L

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 30 V 20A (Tc) 10V 55mOhm @ 4.5A, 10V 2V @ 250µA 18 nC @ 10 V ±20V 365 pF @ 15 V - 37.5W (Tc) -65°C ~ 175°C (TJ) Through Hole
SIHA14N60E-GE3

SIHA14N60E-GE3

N-CHANNEL 600V

Vishay Siliconix
1,000 -

RFQ

SIHA14N60E-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) E Active N-Channel MOSFET (Metal Oxide) 600 V 13A (Tc) 10V 309mOhm @ 7A, 10V 4V @ 250µA 64 nC @ 10 V ±30V 1205 pF @ 100 V - 147W (Tc) -55°C ~ 150°C (TJ) Through Hole
ISL9N7030BLS3ST

ISL9N7030BLS3ST

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
3,200 -

RFQ

ISL9N7030BLS3ST

Ficha técnica

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 75A (Tc) 4.5V, 10V 9mOhm @ 75A, 10V 3V @ 250µA 68 nC @ 10 V ±20V 2600 pF @ 15 V - 100W (Tc) -55°C ~ 175°C (TJ) Surface Mount
NDS9410A

NDS9410A

MOSFET N-CH 30V 7.3A 8SOIC

Fairchild Semiconductor
2,500 -

RFQ

NDS9410A

Ficha técnica

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 7.3A (Ta) 4.5V, 10V 28mOhm @ 7.3A, 10V 3V @ 250µA 22 nC @ 10 V ±20V 830 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SPD50N03S2-07 G

SPD50N03S2-07 G

N-CHANNEL POWER MOSFET

Infineon Technologies
2,500 -

RFQ

SPD50N03S2-07 G

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
UPA1717G(0)-E1-AT

UPA1717G(0)-E1-AT

P-CHANNEL POWER MOSFET

Renesas Electronics America Inc
2,500 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
SFI9510TU

SFI9510TU

P-CHANNEL POWER MOSFET

Fairchild Semiconductor
950 -

RFQ

SFI9510TU

Ficha técnica

Bulk - Active P-Channel MOSFET (Metal Oxide) 100 V 3.6A (Tc) 10V 1.2Ohm @ 1.8A, 10V 4V @ 250µA 10 nC @ 10 V ±30V 335 pF @ 25 V - 3.8W (Ta), 32W (Tc) -55°C ~ 175°C (TJ) Through Hole
FDB8896-F085

FDB8896-F085

19A, 30V, 0.0068OHM, N-CHANNEL

Fairchild Semiconductor
800 -

RFQ

FDB8896-F085

Ficha técnica

Bulk Automotive, AEC-Q101, PowerTrench® Active N-Channel MOSFET (Metal Oxide) 30 V 19A (Ta), 93A (Tc) 4.5V, 10V 5.7mOhm @ 35A, 10V 2.5V @ 250µA 67 nC @ 10 V ±20V 2525 pF @ 15 V - 80W (Tc) -55°C ~ 175°C (TJ)
IPP80N04S304AKSA1

IPP80N04S304AKSA1

N-CHANNEL POWER MOSFET

Infineon Technologies
452 -

RFQ

IPP80N04S304AKSA1

Ficha técnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 10V 4.1mOhm @ 80A, 10V 4V @ 90µA 80 nC @ 10 V ±20V 5200 pF @ 25 V - 136W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP034N03LG

IPP034N03LG

N-CHANNEL POWER MOSFET

Infineon Technologies
1,250 -

RFQ

IPP034N03LG

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
BUZ30A H3045A

BUZ30A H3045A

N-CHANNEL POWER MOSFET

Infineon Technologies
1,000 -

RFQ

BUZ30A H3045A

Ficha técnica

Bulk SIPMOS® Active N-Channel MOSFET (Metal Oxide) 200 V 21A (Tc) 10V 130mOhm @ 13.5A, 10V 4V @ 1mA - ±20V 1900 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SPP80N06S209

SPP80N06S209

N-CHANNEL POWER MOSFET

Infineon Technologies
894 -

RFQ

SPP80N06S209

Ficha técnica

Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 10V 9.1mOhm @ 50A, 10V 4V @ 125µA 80 nC @ 10 V ±20V 3140 pF @ 25 V - 190W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP070N08N3G

IPP070N08N3G

N-CHANNEL POWER MOSFET

Infineon Technologies
609 -

RFQ

IPP070N08N3G

Ficha técnica

Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 80 V 80A (Tc) 6V, 10V 7mOhm @ 73A, 10V 3.5V @ 73µA 56 nC @ 10 V ±20V 3840 pF @ 40 V - 136W (Tc) -55°C ~ 175°C (TJ) Through Hole
FDR844P

FDR844P

MOSFET P-CH 20V 10A SUPERSOT8

Fairchild Semiconductor
4,078 -

RFQ

FDR844P

Ficha técnica

Bulk - Obsolete P-Channel MOSFET (Metal Oxide) 20 V 10A (Ta) 1.8V, 4.5V 11mOhm @ 10A, 4.5V 1.5V @ 250µA 74 nC @ 4.5 V ±8V 4951 pF @ 10 V - 1.8W (Ta) -55°C ~ 150°C (TJ) Surface Mount
2SK3702

2SK3702

MOSFET N-CH 60V 18A TO220ML

onsemi
4,054 -

RFQ

2SK3702

Ficha técnica

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 18A (Ta) - 55mOhm @ 9A, 10V - 19 nC @ 10 V - 775 pF @ 20 V - 2W (Ta), 20W (Tc) 150°C (TJ) Through Hole
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1500+ Promedio diario de RFQ
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1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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