Transistores - IGBT - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus IGBTType Voltage-CollectorEmitterBreakdown(Max) Current-Collector(Ic)(Max) Current-CollectorPulsed(Icm) Vce(on)(Max)@VgeIc Power-Max SwitchingEnergy InputType GateCharge Td(on/off)@25°C TestCondition ReverseRecoveryTime(trr) OperatingTemperature MountingType
APT40GP90B2DQ2G

APT40GP90B2DQ2G

IGBT 900V 101A 543W TMAX

Microchip Technology
3,260 -

RFQ

APT40GP90B2DQ2G

Ficha técnica

Tube POWER MOS 7® Active PT 900 V 101 A 160 A 3.9V @ 15V, 40A 543 W 795µJ (off) Standard 145 nC 14ns/90ns 600V, 40A, 4.3Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
APT50GT120LRDQ2G

APT50GT120LRDQ2G

IGBT 1200V 106A 694W TO264

Microchip Technology
2,512 -

RFQ

APT50GT120LRDQ2G

Ficha técnica

Tube Thunderbolt IGBT® Active NPT 1200 V 106 A 150 A 3.7V @ 15V, 50A 694 W 2585µJ (on), 1910µJ (off) Standard 240 nC 23ns/215ns 800V, 50A, 1Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
APT35GP120B2D2G

APT35GP120B2D2G

IGBT PT COMBI 1200V 35A TO-247

Microchip Technology
2,969 -

RFQ

Tube POWER MOS 7® Active PT 1200 V 96 A 140 A 3.9V @ 15V, 35A 540 W 1mJ (on), 1.185mJ (off) Standard 150 nC 14ns/99ns 800V, 35A, 5Ohm, 15V 85 ns -55°C ~ 150°C (TJ) Through Hole
APT150GN60B2G

APT150GN60B2G

IGBT 600V 220A 536W SOT227

Microchip Technology
2,038 -

RFQ

APT150GN60B2G

Ficha técnica

Tube - Active Trench Field Stop 600 V 220 A 450 A 1.85V @ 15V, 150A 536 W 8.81mJ (on), 4.295mJ (off) Standard 970 nC 44ns/430ns 400V, 150A, 1Ohm, 15V - -55°C ~ 175°C (TJ) Through Hole
APT50GF120B2RG

APT50GF120B2RG

IGBT 1200V 135A 781W TMAX

Microchip Technology
2,883 -

RFQ

APT50GF120B2RG

Ficha técnica

Tube - Active NPT 1200 V 135 A 150 A 3V @ 15V, 50A 781 W 3.6mJ (on), 2.64mJ (off) Standard 340 nC 25ns/260ns 800V, 50A, 1Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
APT80GP60B2G

APT80GP60B2G

IGBT 600V 100A 1041W TMAX

Microchip Technology
2,813 -

RFQ

APT80GP60B2G

Ficha técnica

Tube POWER MOS 7® Active PT 600 V 100 A - 2.7V @ 15V, 80A 1041 W - Standard - - - - - Through Hole
APT200GN60B2G

APT200GN60B2G

IGBT 600V 283A 682W TO247

Microchip Technology
2,481 -

RFQ

APT200GN60B2G

Ficha técnica

Tube - Active Trench Field Stop 600 V 283 A 600 A 1.85V @ 15V, 200A 682 W 13mJ (on), 11mJ (off) Standard 1180 nC 50ns/560ns 400V, 200A, 1Ohm, 15V - -55°C ~ 175°C (TJ) Through Hole
APT150GN60LDQ4G

APT150GN60LDQ4G

IGBT 600V 220A 536W TO-264L

Microchip Technology
3,877 -

RFQ

APT150GN60LDQ4G

Ficha técnica

Tube - Active Trench Field Stop 600 V 220 A 450 A 1.85V @ 15V, 150A 536 W 8.81mJ (on), 4.295mJ (off) Standard 970 nC 44ns/430ns 400V, 150A, 1Ohm, 15V - -55°C ~ 175°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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