Transistores - IGBT - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus IGBTType Voltage-CollectorEmitterBreakdown(Max) Current-Collector(Ic)(Max) Current-CollectorPulsed(Icm) Vce(on)(Max)@VgeIc Power-Max SwitchingEnergy InputType GateCharge Td(on/off)@25°C TestCondition ReverseRecoveryTime(trr) OperatingTemperature MountingType
APT100GN60B2G

APT100GN60B2G

IGBT 600V 229A 625W TMAX

Microchip Technology
2,232 -

RFQ

APT100GN60B2G

Ficha técnica

Tube - Active Trench Field Stop 600 V 229 A 300 A 1.85V @ 15V, 100A 625 W 4.7mJ (on), 2.675mJ (off) Standard 600 nC 31ns/310ns 400V, 100A, 1Ohm, 15V - -55°C ~ 175°C (TJ) Through Hole
APT35GN120SG/TR

APT35GN120SG/TR

IGBT FIELDSTOP LOW FREQUENCY SIN

Microchip Technology
3,354 -

RFQ

APT35GN120SG/TR

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active NPT, Trench Field Stop 1200 V 84 A 105 A 2.1V @ 15V, 35A 379 W -, 2.315mJ (off) Standard 220 nC 24ns/300ns 800V, 35A, 2.2Ohm, 15V - -55°C ~ 150°C (TJ) Surface Mount
APT25GN120B2DQ2G

APT25GN120B2DQ2G

IGBT 1200V 67A 272W TMAX

Microchip Technology
3,140 -

RFQ

APT25GN120B2DQ2G

Ficha técnica

Tube - Active NPT, Trench Field Stop 1200 V 67 A 75 A 2.1V @ 15V, 25A 272 W 2.15µJ (off) Standard 155 nC 22ns/280ns 800V, 25A, 4.3Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
APT50GR120L

APT50GR120L

IGBT 1200V 117A 694W TO264

Microchip Technology
2,542 -

RFQ

APT50GR120L

Ficha técnica

Tube - Active NPT 1200 V 117 A 200 A 3.2V @ 15V, 50A 694 W 2.14mJ (on), 1.48mJ (off) Standard 445 nC 28ns/237ns 600V, 50A, 4.3Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
APT50GR120B2

APT50GR120B2

IGBT 1200V 117A 694W TO247

Microchip Technology
2,985 -

RFQ

APT50GR120B2

Ficha técnica

Tube - Active NPT 1200 V 117 A 200 A 3.2V @ 15V, 50A 694 W 2.14mJ (on), 1.48mJ (off) Standard 445 nC 28ns/237ns 600V, 50A, 4.3Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
APT68GA60B2D40

APT68GA60B2D40

IGBT 600V 121A 520W TO-247

Microchip Technology
3,866 -

RFQ

APT68GA60B2D40

Ficha técnica

Tube POWER MOS 8™ Active PT 600 V 121 A 202 A 2.5V @ 15V, 40A 520 W 715µJ (on), 607µJ (off) Standard 198 nC 21ns/133ns 400V, 40A, 4.7Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
APT68GA60LD40

APT68GA60LD40

IGBT 600V 121A 520W TO-264

Microchip Technology
2,077 -

RFQ

APT68GA60LD40

Ficha técnica

Tube POWER MOS 8™ Active PT 600 V 121 A 202 A 2.5V @ 15V, 40A 520 W 715µJ (on), 607µJ (off) Standard 198 nC 21ns/133ns 400V, 40A, 4.7Ohm, 15V 22 ns -55°C ~ 150°C (TJ) Through Hole
APT64GA90LD30

APT64GA90LD30

IGBT 900V 117A 500W TO-264

Microchip Technology
3,791 -

RFQ

APT64GA90LD30

Ficha técnica

Tube POWER MOS 8™ Active PT 900 V 117 A 193 A 3.1V @ 15V, 38A 500 W 1192µJ (on), 1088µJ (off) Standard 162 nC 18ns/131ns 600V, 38A, 4.7Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
APT70GR120L

APT70GR120L

IGBT 1200V 160A 961W TO264

Microchip Technology
2,692 -

RFQ

APT70GR120L

Ficha técnica

Tube - Active NPT 1200 V 160 A 280 A 3.2V @ 15V, 70A 961 W 3.82mJ (on), 2.58mJ (off) Standard 544 nC 33ns/278ns 600V, 70A, 4.3Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
APT70GR120B2

APT70GR120B2

IGBT 1200V 160A 961W TO247

Microchip Technology
3,073 -

RFQ

APT70GR120B2

Ficha técnica

Tube - Active NPT 1200 V 160 A 280 A 3.2V @ 15V, 70A 961 W 3.82mJ (on), 2.58mJ (off) Standard 544 nC 33ns/278ns 600V, 70A, 4.3Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
APT50GP60BG

APT50GP60BG

IGBT 600V 100A 625W TO247

Microchip Technology
3,297 -

RFQ

APT50GP60BG

Ficha técnica

Tube POWER MOS 7® Active PT 600 V 100 A 190 A 2.7V @ 15V, 50A 625 W 465µJ (on), 637µJ (off) Standard 165 nC 19ns/83ns 400V, 50A, 5Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
APT40GP60BG

APT40GP60BG

IGBT 600V 100A 543W TO247

Microchip Technology
3,242 -

RFQ

APT40GP60BG

Ficha técnica

Tube POWER MOS 7® Active PT 600 V 100 A 160 A 2.7V @ 15V, 40A 543 W 385µJ (on), 352µJ (off) Standard 135 nC 20ns/64ns 400V, 40A, 5Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
APT40GP60B2DQ2G

APT40GP60B2DQ2G

IGBT 600V 100A 543W TMAX

Microchip Technology
2,732 -

RFQ

APT40GP60B2DQ2G

Ficha técnica

Tube POWER MOS 7® Active PT 600 V 100 A 160 A 2.7V @ 15V, 40A 543 W 385µJ (on), 350µJ (off) Standard 135 nC 20ns/64ns 400V, 40A, 5Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
APT102GA60L

APT102GA60L

IGBT 600V 183A 780W TO264

Microchip Technology
3,660 -

RFQ

APT102GA60L

Ficha técnica

Tube - Active PT 600 V 183 A 307 A 2.5V @ 15V, 62A 780 W 1.354mJ (on), 1.614mJ (off) Standard 294 nC 28ns/212ns 400V, 62A, 4.7Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
APT80GA90LD40

APT80GA90LD40

IGBT 900V 145A 625W TO-264

Microchip Technology
3,941 -

RFQ

APT80GA90LD40

Ficha técnica

Tube POWER MOS 8™ Active PT 900 V 145 A 239 A 3.1V @ 15V, 47A 625 W 1652µJ (on), 1389µJ (off) Standard 200 nC 18ns/149ns 600V, 47A, 4.7Ohm, 15V 25 ns - Through Hole
APT85GR120L

APT85GR120L

IGBT 1200V 170A 962W TO264

Microchip Technology
2,821 -

RFQ

APT85GR120L

Ficha técnica

Tube - Active NPT 1200 V 170 A 340 A 3.2V @ 15V, 85A 962 W 6mJ (on), 3.8mJ (off) Standard 660 nC 43ns/300ns 600V, 85A, 4.3Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
APT50GP60B2DQ2G

APT50GP60B2DQ2G

IGBT 600V 150A 625W TMAX

Microchip Technology
2,711 -

RFQ

APT50GP60B2DQ2G

Ficha técnica

Tube POWER MOS 7® Active PT 600 V 150 A 190 A 2.7V @ 15V, 50A 625 W 465µJ (on), 635µJ (off) Standard 165 nC 19ns/85ns 400V, 50A, 4.3Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
APT40GP90BG

APT40GP90BG

IGBT 900V 100A 543W TO247

Microchip Technology
2,062 -

RFQ

APT40GP90BG

Ficha técnica

Tube POWER MOS 7® Active PT 900 V 100 A 160 A 3.9V @ 15V, 40A 543 W 825µJ (off) Standard 145 nC 16ns/75ns 600V, 40A, 5Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
APT75GN120B2G

APT75GN120B2G

IGBT 1200V 200A 833W TMAX

Microchip Technology
3,300 -

RFQ

APT75GN120B2G

Ficha técnica

Tube - Active Trench Field Stop 1200 V 200 A 225 A 2.1V @ 15V, 75A 833 W 8045µJ (on), 7640µJ (off) Standard 425 nC 60ns/620ns 800V, 75A, 1Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
APT50GT120B2RDQ2G

APT50GT120B2RDQ2G

IGBT 1200V 94A 625W TO247

Microchip Technology
2,973 -

RFQ

APT50GT120B2RDQ2G

Ficha técnica

Tube Thunderbolt IGBT® Active NPT 1200 V 94 A 150 A 3.7V @ 15V, 50A 625 W 2330µJ (off) Standard 340 nC 24ns/230ns 800V, 50A, 4.7Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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