Transistores - IGBT - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus IGBTType Voltage-CollectorEmitterBreakdown(Max) Current-Collector(Ic)(Max) Current-CollectorPulsed(Icm) Vce(on)(Max)@VgeIc Power-Max SwitchingEnergy InputType GateCharge Td(on/off)@25°C TestCondition ReverseRecoveryTime(trr) OperatingTemperature MountingType
APT25GR120B

APT25GR120B

IGBT 1200V 75A 521W TO247

Microchip Technology
166 -

RFQ

APT25GR120B

Ficha técnica

Bulk - Active NPT 1200 V 75 A 100 A 3.2V @ 15V, 25A 521 W 742µJ (on), 427µJ (off) Standard 203 nC 16ns/122ns 600V, 25A, 4.3Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
APT25GR120BD15

APT25GR120BD15

IGBT 1200V 75A 521W TO247

Microchip Technology
122 -

RFQ

APT25GR120BD15

Ficha técnica

Tube - Active NPT 1200 V 75 A 100 A 3.2V @ 15V, 25A 521 W 742µJ (on), 427µJ (off) Standard 203 nC 16ns/122ns 600V, 25A, 4.3Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
APT33GF120BRG

APT33GF120BRG

IGBT 1200V 52A 297W TO247

Microchip Technology
212 -

RFQ

APT33GF120BRG

Ficha técnica

Tube - Active NPT 1200 V 52 A 104 A 3.2V @ 15V, 25A 297 W 2.8mJ (on), 2.8mJ (off) Standard 170 nC 25ns/210ns - - -55°C ~ 150°C (TJ) Through Hole
APT50GN120L2DQ2G

APT50GN120L2DQ2G

IGBT 1200V 134A 543W TO264

Microchip Technology
162 -

RFQ

APT50GN120L2DQ2G

Ficha técnica

Tube - Active NPT, Trench Field Stop 1200 V 134 A 150 A 2.1V @ 15V, 50A 543 W 4495µJ (off) Standard 315 nC 28ns/320ns 800V, 50A, 2.2Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
APT50GT120B2RG

APT50GT120B2RG

IGBT 1200V 94A 625W TO247

Microchip Technology
283 -

RFQ

APT50GT120B2RG

Ficha técnica

Tube Thunderbolt IGBT® Active NPT 1200 V 94 A 150 A 3.7V @ 15V, 50A 625 W 2330µJ (off) Standard 340 nC 24ns/230ns 800V, 50A, 4.7Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
APT65GP60B2G

APT65GP60B2G

IGBT 600V 100A 833W TMAX

Microchip Technology
119 -

RFQ

APT65GP60B2G

Ficha técnica

Tube POWER MOS 7® Active PT 600 V 100 A 250 A 2.7V @ 15V, 65A 833 W 605µJ (on), 896µJ (off) Standard 210 nC 30ns/91ns 400V, 65A, 5Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
APT40GT60BRG

APT40GT60BRG

IGBT 600V 80A 345W TO247

Microchip Technology
560 -

RFQ

APT40GT60BRG

Ficha técnica

Tube Thunderbolt IGBT® Active NPT 600 V 80 A 160 A 2.5V @ 15V, 40A 345 W 828µJ (off) Standard 200 nC 12ns/124ns 400V, 40A, 5Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
APT50GN60BDQ3G

APT50GN60BDQ3G

IGBT FIELDSTOP COMBI 600V 50A TO

Microchip Technology
180 -

RFQ

APT50GN60BDQ3G

Ficha técnica

Tube - Active Trench Field Stop 600 V 107 A 150 A 1.85V @ 15V, 50A 366 W 1.185mJ (on), 1.565mJ (off) Standard 325 nC 20ns/230ns 400V, 50A, 4.3Ohm, 15V 35 ns -55°C ~ 175°C (TJ) Through Hole
APT27GA90BD15

APT27GA90BD15

IGBT 900V 48A 223W TO247

Microchip Technology
3,926 -

RFQ

APT27GA90BD15

Ficha técnica

Tube - Active PT 900 V 48 A 79 A 3.1V @ 15V, 14A 223 W 413µJ (on), 287µJ (off) Standard 62 nC 9ns/98ns 600V, 14A, 10Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
APT20GF120BRDG

APT20GF120BRDG

IGBT NPT COMBI 1200V 20A TO-247

Microchip Technology
3,124 -

RFQ

Tube - Active NPT 1200 V 32 A 64 A 3.2V @ 15V, 15A 200 W - Standard 140 nC 17ns/93ns 792V, 20A, 10Ohm, 15V 85 ns -55°C ~ 150°C (TJ) Through Hole
APT25GT120BRDQ2G

APT25GT120BRDQ2G

IGBT 1200V 54A 347W TO247

Microchip Technology
3,348 -

RFQ

APT25GT120BRDQ2G

Ficha técnica

Tube Thunderbolt IGBT® Active NPT 1200 V 54 A 75 A 3.7V @ 15V, 25A 347 W 930µJ (on), 720µJ (off) Standard 170 nC 14ns/150ns 800V, 25A, 5Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
APT30GP60BDQ1G

APT30GP60BDQ1G

IGBT 600V 100A 463W TO247

Microchip Technology
3,546 -

RFQ

APT30GP60BDQ1G

Ficha técnica

Tube POWER MOS 7® Active PT 600 V 100 A 120 A 2.7V @ 15V, 30A 463 W 260µJ (on), 250µJ (off) Standard 90 nC 13ns/55ns 400V, 30A, 5Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
APT80GA90B

APT80GA90B

IGBT 900V 145A 625W TO247

Microchip Technology
2,144 -

RFQ

APT80GA90B

Ficha técnica

Tube - Active PT 900 V 145 A 239 A 3.1V @ 15V, 47A 625 W 1652µJ (on), 1389µJ (off) Standard 200 nC 18ns/149ns 600V, 47A, 4.7Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
APT80GA60LD40

APT80GA60LD40

IGBT 600V 143A 625W TO264

Microchip Technology
2,826 -

RFQ

APT80GA60LD40

Ficha técnica

Tube POWER MOS 8™ Active PT 600 V 143 A 240 A 2.5V @ 15V, 47A 625 W 840µJ (on), 751µJ (off) Standard 230 nC 23ns/158ns 400V, 47A, 4.7Ohm, 15V 22 ns -55°C ~ 150°C (TJ) Through Hole
APT50GT120LRG

APT50GT120LRG

IGBT NPT SINGLE 1200V 50A TO-264

Microchip Technology
2,216 -

RFQ

APT50GT120LRG

Ficha técnica

Tube Thunderbolt IGBT® Active NPT 1200 V 50 A 150 A 3.7V @ 15V, 50A 625 W -, 2.33mJ (off) Standard 340 nC 24ns/230ns 800V, 50A, 4.7Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
APT35GA90BD15

APT35GA90BD15

IGBT 900V 63A 290W TO247

Microchip Technology
2,632 -

RFQ

APT35GA90BD15

Ficha técnica

Tube - Active PT 900 V 63 A 105 A 3.1V @ 15V, 18A 290 W 642µJ (on), 382µJ (off) Standard 84 nC 12ns/104ns 600V, 18A, 10Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
APT25GR120S

APT25GR120S

IGBT 1200V 75A 521W D3PAK

Microchip Technology
2,116 -

RFQ

APT25GR120S

Ficha técnica

Bulk - Active NPT 1200 V 75 A 100 A 3.2V @ 15V, 25A 521 W 742µJ (on), 427µJ (off) Standard 203 nC 16ns/122ns 600V, 25A, 4.3Ohm, 15V - -55°C ~ 150°C (TJ) Surface Mount
APT40GR120B2D30

APT40GR120B2D30

IGBT 1200V 88A 500W TO247

Microchip Technology
2,642 -

RFQ

APT40GR120B2D30

Ficha técnica

Tube - Active NPT 1200 V 88 A 160 A 3.2V @ 15V, 40A 500 W 1.38mJ (on), 906µJ (off) Standard 210 nC 22ns/163ns 600V, 40A, 4.3Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
APT33GF120B2RDQ2G

APT33GF120B2RDQ2G

IGBT 1200V 64A 357W TMAX

Microchip Technology
3,423 -

RFQ

APT33GF120B2RDQ2G

Ficha técnica

Tube - Active NPT 1200 V 64 A 75 A 3V @ 15V, 25A 357 W 1.315mJ (on), 1.515mJ (off) Standard 170 nC 14ns/185ns 800V, 25A, 4.3Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
APT50GF120LRG

APT50GF120LRG

IGBT 1200V 135A 781W TO264

Microchip Technology
2,424 -

RFQ

APT50GF120LRG

Ficha técnica

Tube - Active NPT 1200 V 135 A 150 A 3V @ 15V, 50A 781 W 3.6mJ (on), 2.64mJ (off) Standard 340 nC 25ns/260ns 800V, 50A, 1Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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