Transistores - IGBT - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus IGBTType Voltage-CollectorEmitterBreakdown(Max) Current-Collector(Ic)(Max) Current-CollectorPulsed(Icm) Vce(on)(Max)@VgeIc Power-Max SwitchingEnergy InputType GateCharge Td(on/off)@25°C TestCondition ReverseRecoveryTime(trr) OperatingTemperature MountingType
APT15GP60BG

APT15GP60BG

IGBT 600V 56A 250W TO247

Microchip Technology
3,645 -

RFQ

APT15GP60BG

Ficha técnica

Tube POWER MOS 7® Active PT 600 V 56 A 65 A 2.7V @ 15V, 15A 250 W 130µJ (on), 121µJ (off) Standard 55 nC 8ns/29ns 400V, 15A, 5Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
APT35GA90B

APT35GA90B

IGBT 900V 63A 290W TO-247

Microchip Technology
2,414 -

RFQ

APT35GA90B

Ficha técnica

Tube POWER MOS 8™ Active PT 900 V 63 A 105 A 3.1V @ 15V, 18A 290 W 642µJ (on), 382µJ (off) Standard 84 nC 12ns/104ns 600V, 18A, 10Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
APT15GT120BRDQ1G

APT15GT120BRDQ1G

IGBT 1200V 36A 250W TO247

Microchip Technology
3,205 -

RFQ

APT15GT120BRDQ1G

Ficha técnica

Tube Thunderbolt IGBT® Active NPT 1200 V 36 A 45 A 3.6V @ 15V, 15A 250 W 585µJ (on), 260µJ (off) Standard 105 nC 10ns/85ns 800V, 15A, 5Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
APT15GP60BDQ1G

APT15GP60BDQ1G

IGBT 600V 56A 250W TO247

Microchip Technology
3,661 -

RFQ

APT15GP60BDQ1G

Ficha técnica

Tube POWER MOS 7® Active PT 600 V 56 A 65 A 2.7V @ 15V, 15A 250 W 130µJ (on), 120µJ (off) Standard 55 nC 8ns/29ns 400V, 15A, 5Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
APT54GA60B

APT54GA60B

IGBT 600V 96A 416W TO-247

Microchip Technology
3,267 -

RFQ

APT54GA60B

Ficha técnica

Tube POWER MOS 8™ Active PT 600 V 96 A 161 A 2.5V @ 15V, 32A 416 W 534µJ (on), 466µJ (off) Standard 158 nC 17ns/112ns 400V, 32A, 4.7Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
APT15GP90BDQ1G

APT15GP90BDQ1G

IGBT 900V 43A 250W TO247

Microchip Technology
2,545 -

RFQ

APT15GP90BDQ1G

Ficha técnica

Tube POWER MOS 7® Active PT 900 V 43 A 60 A 3.9V @ 15V, 15A 250 W 200µJ (off) Standard 60 nC 9ns/33ns 600V, 15A, 4.3Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
APT20GN60SDQ2G

APT20GN60SDQ2G

IGBT FIELDSTOP COMBI 600V 20A TO

Microchip Technology
3,755 -

RFQ

APT20GN60SDQ2G

Ficha técnica

Tube - Active Trench Field Stop 600 V 40 A 60 A 1.9V @ 15V, 20A 136 W 230µJ (on), 580µJ (off) Standard 120 nC 9ns/140ns 400V, 20A, 4.3Ohm, 15V 30 ns -55°C ~ 175°C (TJ) Surface Mount
APT13GP120BG

APT13GP120BG

IGBT 1200V 41A 250W TO247

Microchip Technology
2,827 -

RFQ

APT13GP120BG

Ficha técnica

Tube POWER MOS 7® Active PT 1200 V 41 A 50 A 3.9V @ 15V, 13A 250 W 115µJ (on), 165µJ (off) Standard 55 nC 9ns/28ns 600V, 13A, 5Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
APT15GN120BDQ1G

APT15GN120BDQ1G

IGBT 1200V 45A 195W TO247

Microchip Technology
3,921 -

RFQ

APT15GN120BDQ1G

Ficha técnica

Tube - Active Trench Field Stop 1200 V 45 A 45 A 2.1V @ 15V, 15A 195 W 410µJ (on), 950µJ (off) Standard 90 nC 10ns/150ns 800V, 15A, 4.3Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
APT50GT60BRG

APT50GT60BRG

IGBT 600V 110A 446W TO247

Microchip Technology
3,812 -

RFQ

APT50GT60BRG

Ficha técnica

Tube Thunderbolt IGBT® Active NPT 600 V 110 A 150 A 2.5V @ 15V, 50A 446 W 995µJ (on), 1070µJ (off) Standard 240 nC 14ns/240ns 400V, 50A, 4.3Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
APT44GA60BD30

APT44GA60BD30

IGBT 600V 78A 337W TO-247

Microchip Technology
3,555 -

RFQ

APT44GA60BD30

Ficha técnica

Tube POWER MOS 8™ Active PT 600 V 78 A 130 A 2.5V @ 15V, 26A 337 W 409µJ (on), 258µJ (off) Standard 128 nC 16ns/84ns 400V, 26A, 4.7Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
APT75GN60BG

APT75GN60BG

IGBT 600V 155A 536W TO247

Microchip Technology
2,265 -

RFQ

APT75GN60BG

Ficha técnica

Tube - Active Trench Field Stop 600 V 155 A 225 A 1.85V @ 15V, 75A 536 W 2500µJ (on), 2140µJ (off) Standard 485 nC 47ns/385ns 400V, 75A, 1Ohm, 15V - -55°C ~ 175°C (TJ) Through Hole
APT13GP120BDQ1G

APT13GP120BDQ1G

IGBT 1200V 41A 250W TO247

Microchip Technology
2,077 -

RFQ

APT13GP120BDQ1G

Ficha técnica

Tube POWER MOS 7® Active PT 1200 V 41 A 50 A 3.9V @ 15V, 13A 250 W 115µJ (on), 165µJ (off) Standard 55 nC 9ns/28ns 600V, 13A, 5Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
APT44GA60B

APT44GA60B

IGBT 600V 78A 337W TO-247

Microchip Technology
2,934 -

RFQ

APT44GA60B

Ficha técnica

Tube POWER MOS 8™ Active PT 600 V 78 A 130 A 2.5V @ 15V, 26A 337 W 409µJ (on), 258µJ (off) Standard 128 nC 16ns/84ns 400V, 26A, 4.7Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
APT54GA60BD30

APT54GA60BD30

IGBT 600V 96A 416W TO247

Microchip Technology
3,073 -

RFQ

APT54GA60BD30

Ficha técnica

Tube - Active PT 600 V 96 A 161 A 2.5V @ 15V, 32A 416 W 534µJ (on), 466µJ (off) Standard 28 nC 17ns/112ns 400V, 32A, 4.7Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
APT36GA60SD15

APT36GA60SD15

IGBT PT COMBI 600V 36A TO-268

Microchip Technology
3,985 -

RFQ

APT36GA60SD15

Ficha técnica

Tube POWER MOS 8® Active PT 600 V 65 A 109 A 2.5V @ 15V, 20A 290 W 307µJ (on), 254µJ (off) Standard 102 nC 16ns/122ns 400V, 20A, 10Ohm, 15V 19 ns -55°C ~ 150°C (TJ) Surface Mount
APT25GN120SG/TR

APT25GN120SG/TR

IGBT FIELDSTOP LOW FREQUENCY SIN

Microchip Technology
3,305 -

RFQ

APT25GN120SG/TR

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active Trench Field Stop 1200 V 67 A 75 A 2.1V @ 15V, 25A 272 W -, 2.15J (off) Standard 155 nC 22ns/280ns 800V, 25A, 1Ohm, 15V - -55°C ~ 150°C (TJ) Surface Mount
APT30GP60BG

APT30GP60BG

IGBT 600V 100A 463W TO247

Microchip Technology
3,194 -

RFQ

APT30GP60BG

Ficha técnica

Tube POWER MOS 7® Active PT 600 V 100 A 100 A 2.7V @ 15V, 30A 463 W 260µJ (on), 250µJ (off) Standard 90 nC 13ns/55ns 400V, 30A, 5Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
APT40GR120S

APT40GR120S

IGBT 1200V 88A 500W D3PAK

Microchip Technology
2,906 -

RFQ

APT40GR120S

Ficha técnica

Tube - Active NPT 1200 V 88 A 160 A 3.2V @ 15V, 40A 500 W 1.38mJ (on), 906µJ (off) Standard 210 nC 22ns/163ns 600V, 40A, 4.3Ohm, 15V - -55°C ~ 150°C (TJ) Surface Mount
APT64GA90B

APT64GA90B

IGBT 900V 117A 500W TO247

Microchip Technology
3,219 -

RFQ

APT64GA90B

Ficha técnica

Tube - Active PT 900 V 117 A 193 A 3.1V @ 15V, 38A 500 W 1857µJ (on), 2311µJ (off) Standard 162 nC 18ns/131ns 600V, 38A, 4.7Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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