Transistores - IGBT - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus IGBTType Voltage-CollectorEmitterBreakdown(Max) Current-Collector(Ic)(Max) Current-CollectorPulsed(Icm) Vce(on)(Max)@VgeIc Power-Max SwitchingEnergy InputType GateCharge Td(on/off)@25°C TestCondition ReverseRecoveryTime(trr) OperatingTemperature MountingType
APT45GP120B2DQ2G

APT45GP120B2DQ2G

IGBT 1200V 113A 625W TMAX

Microchip Technology
2,779 -

RFQ

APT45GP120B2DQ2G

Ficha técnica

Tube POWER MOS 7® Active PT 1200 V 113 A 170 A 3.9V @ 15V, 45A 625 W 900µJ (on), 905µJ (off) Standard 185 nC 18ns/100ns 600V, 45A, 5Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
APT65GP60L2DQ2G

APT65GP60L2DQ2G

IGBT 600V 198A 833W TO264

Microchip Technology
2,555 -

RFQ

APT65GP60L2DQ2G

Ficha técnica

Tube POWER MOS 7® Active PT 600 V 198 A 250 A 2.7V @ 15V, 65A 833 W 605µJ (on), 895µJ (off) Standard 210 nC 30ns/90ns 400V, 65A, 5Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
APT70GR65B

APT70GR65B

IGBT 650V 134A 595W TO-247

Microchip Technology
3,084 -

RFQ

APT70GR65B

Ficha técnica

Tube - Active NPT 650 V 134 A 260 A 2.4V @ 15V, 70A 595 W 1.51mJ (on), 1.46mJ (off) Standard 305 nC 19ns/170ns 433V, 70A, 4.3Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
APT75GN60SDQ2G

APT75GN60SDQ2G

IGBT FIELDSTOP COMBI 600V 75A TO

Microchip Technology
2,327 -

RFQ

APT75GN60SDQ2G

Ficha técnica

Tube - Active Trench Field Stop 600 V 155 A 225 A 1.85V @ 15V, 75A 536 W 2.5mJ (on), 2.14mJ (off) Standard 485 nC 47ns/385ns 400V, 75A, 1Ohm, 15V 25 ns -55°C ~ 175°C (TJ) Surface Mount
APT50GT60BRDQ2G

APT50GT60BRDQ2G

IGBT 600V 110A 446W TO247

Microchip Technology
2,337 -

RFQ

APT50GT60BRDQ2G

Ficha técnica

Tube Thunderbolt IGBT® Active NPT 600 V 110 A 150 A 2.5V @ 15V, 50A 446 W 995µJ (on), 1070µJ (off) Standard 240 nC 14ns/240ns 400V, 50A, 5Ohm, 15V 22 ns -55°C ~ 150°C (TJ) Through Hole
APT25GT120BRG

APT25GT120BRG

IGBT 1200V 54A 347W TO247

Microchip Technology
3,601 -

RFQ

APT25GT120BRG

Ficha técnica

Tube Thunderbolt IGBT® Active NPT 1200 V 54 A 75 A 3.7V @ 15V, 25A 347 W 930µJ (on), 720µJ (off) Standard 170 nC 14ns/150ns 800V, 25A, 5Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
APT30GT60BRDQ2G

APT30GT60BRDQ2G

IGBT 600V 64A 250W TO247

Microchip Technology
3,578 -

RFQ

APT30GT60BRDQ2G

Ficha técnica

Tube Thunderbolt IGBT® Active NPT 600 V 64 A 110 A 2.5V @ 15V, 30A 250 W 80µJ (on), 605µJ (off) Standard 7.5 nC 12ns/225ns 400V, 30A, 10Ohm, 15V 22 ns -55°C ~ 150°C (TJ) Through Hole
APT75GN120LG

APT75GN120LG

IGBT 1200V 200A 833W TO264

Microchip Technology
3,697 -

RFQ

APT75GN120LG

Ficha técnica

Tube - Active Trench Field Stop 1200 V 200 A 225 A 2.1V @ 15V, 75A 833 W 8620µJ (on), 11400µJ (off) Standard 425 nC 60ns/620ns 800V, 75A, 1Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
APT36GA60BD15

APT36GA60BD15

IGBT 600V 65A 290W TO-247

Microchip Technology
2,359 -

RFQ

APT36GA60BD15

Ficha técnica

Tube POWER MOS 8™ Active PT 600 V 65 A 109 A 2.5V @ 15V, 20A 290 W 307µJ (on), 254µJ (off) Standard 18 nC 16ns/122ns 400V, 20A, 10Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
APT40GR120B

APT40GR120B

IGBT 1200V 88A 500W TO247

Microchip Technology
3,240 -

RFQ

APT40GR120B

Ficha técnica

Tube - Active NPT 1200 V 88 A 160 A 3.2V @ 15V, 40A 500 W 1.38mJ (on), 906µJ (off) Standard 210 nC 22ns/163ns 600V, 40A, 4.3Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
APT25GN120SG

APT25GN120SG

IGBT 1200V 67A 272W D3PAK

Microchip Technology
2,634 -

RFQ

APT25GN120SG

Ficha técnica

Tube - Active Trench Field Stop 1200 V 67 A 75 A 2.1V @ 15V, 25A 272 W - Standard 155 nC 22ns/280ns 800V, 25A, 1Ohm, 15V - -55°C ~ 150°C (TJ) Surface Mount
APT43GA90BD30

APT43GA90BD30

IGBT 900V 78A 337W TO247

Microchip Technology
3,346 -

RFQ

APT43GA90BD30

Ficha técnica

Tube - Active PT 900 V 78 A 129 A 3.1V @ 15V, 47A 337 W 875µJ (on), 425µJ (off) Standard 116 nC 12ns/82ns 600V, 25A, 4.7Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
APT35GN120BG

APT35GN120BG

IGBT 1200V 94A 379W TO247

Microchip Technology
2,095 -

RFQ

APT35GN120BG

Ficha técnica

Tube - Active NPT, Trench Field Stop 1200 V 94 A 105 A 2.1V @ 15V, 35A 379 W 2.315mJ (off) Standard 220 nC 24ns/300ns 800V, 35A, 2.2Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
APT95GR65B2

APT95GR65B2

IGBT 650V 208A 892W T-MAX

Microchip Technology
3,829 -

RFQ

APT95GR65B2

Ficha técnica

Tube - Active NPT 650 V 208 A 400 A 2.4V @ 15V, 95A 892 W 3.12mJ (on), 2.55mJ (off) Standard 420 nC 29ns/226ns 433V, 95A, 4.3Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
APT35GN120SG

APT35GN120SG

IGBT FIELDSTOP SINGLE 1200V 35A

Microchip Technology
2,880 -

RFQ

APT35GN120SG

Ficha técnica

Tube - Active NPT, Trench Field Stop 1200 V 94 A 105 A 2.1V @ 15V, 35A 379 W -, 2.315mJ (off) Standard 220 nC 24ns/300ns 800V, 35A, 2.2Ohm, 15V - -55°C ~ 150°C (TJ) Surface Mount
APT85GR120B2

APT85GR120B2

IGBT 1200V 170A 962W TO247

Microchip Technology
3,996 -

RFQ

APT85GR120B2

Ficha técnica

Tube - Active NPT 1200 V 170 A 340 A 3.2V @ 15V, 85A 962 W 6mJ (on), 3.8mJ (off) Standard 660 nC 43ns/300ns 600V, 85A, 4.3Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
APT75GP120B2G

APT75GP120B2G

IGBT 1200V 100A 1042W TMAX

Microchip Technology
3,764 -

RFQ

APT75GP120B2G

Ficha técnica

Tube POWER MOS 7® Active PT 1200 V 100 A 300 A 3.9V @ 15V, 75A 1042 W 1620µJ (on), 2500µJ (off) Standard 320 nC 20ns/163ns 600V, 75A, 5Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
APT100GN120B2G

APT100GN120B2G

IGBT 1200V 245A 960W TMAX

Microchip Technology
2,129 -

RFQ

APT100GN120B2G

Ficha técnica

Tube - Active Trench Field Stop 1200 V 245 A 300 A 2.1V @ 15V, 100A 960 W 11mJ (on), 9.5mJ (off) Standard 540 nC 50ns/615ns 800V, 100A, 1Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
APT45GR65B

APT45GR65B

IGBT 650V 92A 357W TO-247

Microchip Technology
2,299 -

RFQ

APT45GR65B

Ficha técnica

Tube - Active NPT 650 V 92 A 168 A 2.4V @ 15V, 45A 357 W 900µJ (on), 580µJ (off) Standard 203 nC 15ns/100ns 433V, 45A, 4.3Ohm, 15V - - Through Hole
APT36GA60B

APT36GA60B

IGBT 600V 65A 290W TO-247

Microchip Technology
3,672 -

RFQ

APT36GA60B

Ficha técnica

Tube POWER MOS 8™ Active PT 600 V 65 A 109 A 2.5V @ 15V, 20A 290 W 307µJ (on), 254µJ (off) Standard 102 nC 16ns/122ns 400V, 20A, 10Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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