Transistores - IGBT - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus IGBTType Voltage-CollectorEmitterBreakdown(Max) Current-Collector(Ic)(Max) Current-CollectorPulsed(Icm) Vce(on)(Max)@VgeIc Power-Max SwitchingEnergy InputType GateCharge Td(on/off)@25°C TestCondition ReverseRecoveryTime(trr) OperatingTemperature MountingType
APT43GA90B

APT43GA90B

IGBT 900V 78A 337W TO-247

Microchip Technology
3,599 -

RFQ

APT43GA90B

Ficha técnica

Tube POWER MOS 8™ Active PT 900 V 78 A 129 A 3.1V @ 15V, 25A 337 W 875µJ (on), 425µJ (off) Standard 116 nC 12ns/82ns 600V, 25A, 4.7Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
APT25GN120BG

APT25GN120BG

IGBT 1200V 67A 272W TO247

Microchip Technology
2,946 -

RFQ

APT25GN120BG

Ficha técnica

Tube - Active Trench Field Stop 1200 V 67 A 75 A 2.1V @ 15V, 25A 272 W 2.15µJ (off) Standard 155 nC 22ns/280ns 800V, 25A, 1Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
APT20GN60BDQ2G

APT20GN60BDQ2G

IGBT FIELDSTOP COMBI 600V 20A TO

Microchip Technology
3,806 -

RFQ

APT20GN60BDQ2G

Ficha técnica

Tube - Active Trench Field Stop 600 V 40 A 60 A 1.9V @ 15V, 20A 136 W 230µJ (on), 580µJ (off) Standard 120 nC 9ns/140ns 400V, 20A, 4.3Ohm, 15V 30 ns -55°C ~ 175°C (TJ) Through Hole
APT25GR120SD15

APT25GR120SD15

IGBT 1200V 75A 521W D3PAK

Microchip Technology
2,718 -

RFQ

APT25GR120SD15

Ficha técnica

Tube - Active NPT 1200 V 75 A 100 A 3.2V @ 15V, 25A 521 W 742µJ (on), 427µJ (off) Standard 203 nC 16ns/122ns 600V, 25A, 4.3Ohm, 15V - -55°C ~ 150°C (TJ) Surface Mount
APT68GA60B

APT68GA60B

IGBT 600V 121A 520W TO-247

Microchip Technology
3,252 -

RFQ

APT68GA60B

Ficha técnica

Tube POWER MOS 8™ Active PT 600 V 121 A 202 A 2.5V @ 15V, 40A 520 W 715µJ (on), 607µJ (off) Standard 298 nC 21ns/133ns 400V, 40A, 4.7Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
APT80GA60B

APT80GA60B

IGBT 600V 143A 625W TO247

Microchip Technology
3,519 -

RFQ

APT80GA60B

Ficha técnica

Tube - Active PT 600 V 143 A 240 A 2.5V @ 15V, 47A 625 W 840µJ (on), 751µJ (off) Standard 230 nC 23ns/158ns 400V, 47A, 4.7Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
APT35GN120L2DQ2G

APT35GN120L2DQ2G

IGBT 1200V 94A 379W TO264

Microchip Technology
2,949 -

RFQ

APT35GN120L2DQ2G

Ficha técnica

Tube - Active NPT, Trench Field Stop 1200 V 94 A 105 A 2.1V @ 15V, 35A 379 W 2.315mJ (off) Standard 220 nC 24ns/300ns 800V, 35A, 2.2Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
APT50GN120B2G

APT50GN120B2G

IGBT 1200V 134A 543W TO-247

Microchip Technology
2,758 -

RFQ

APT50GN120B2G

Ficha técnica

Tube - Active NPT, Trench Field Stop 1200 V 134 A 150 A 2.1V @ 15V, 50A 543 W 4495µJ (off) Standard 315 nC 28ns/320ns 800V, 50A, 2.2Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
APT64GA90B2D30

APT64GA90B2D30

IGBT 900V 117A 500W TO-247

Microchip Technology
3,394 -

RFQ

APT64GA90B2D30

Ficha técnica

Tube POWER MOS 8™ Active PT 900 V 117 A 193 A 3.1V @ 15V, 38A 500 W 1192µJ (on), 1088µJ (off) Standard 162 nC 18ns/131ns 600V, 38A, 4.7Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
APT100GN60LDQ4G

APT100GN60LDQ4G

IGBT 600V 229A 625W TO264

Microchip Technology
3,780 -

RFQ

APT100GN60LDQ4G

Ficha técnica

Tube - Active Trench Field Stop 600 V 229 A 300 A 1.85V @ 15V, 100A 625 W 4.75mJ (on), 2.675mJ (off) Standard 600 nC 31ns/310ns 400V, 100A, 1Ohm, 15V - -55°C ~ 175°C (TJ) Through Hole
APT35GP120BG

APT35GP120BG

IGBT 1200V 96A 543W TO247

Microchip Technology
3,984 -

RFQ

APT35GP120BG

Ficha técnica

Tube POWER MOS 7® Active PT 1200 V 96 A 140 A 3.9V @ 15V, 35A 543 W 750µJ (on), 680µJ (off) Standard 150 nC 16ns/94ns 600V, 35A, 5Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
APT45GP120BG

APT45GP120BG

IGBT 1200V 100A 625W TO247

Microchip Technology
3,117 -

RFQ

APT45GP120BG

Ficha técnica

Tube POWER MOS 7® Active PT 1200 V 100 A 170 A 3.9V @ 15V, 45A 625 W 900µJ (on), 904µJ (off) Standard 185 nC 18ns/102ns 600V, 45A, 5Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
APT50GN60BG

APT50GN60BG

IGBT 600V 107A 366W TO247

Microchip Technology
3,006 -

RFQ

APT50GN60BG

Ficha técnica

Tube - Active Trench Field Stop 600 V 107 A 150 A 1.85V @ 15V, 50A 366 W 1185µJ (on), 1565µJ (off) Standard 325 nC 20ns/230ns 400V, 50A, 4.3Ohm, 15V - -55°C ~ 175°C (TJ) Through Hole
APT50GN60BDQ2G

APT50GN60BDQ2G

IGBT 600V 107A 366W TO247

Microchip Technology
2,371 -

RFQ

APT50GN60BDQ2G

Ficha técnica

Tube - Active Trench Field Stop 600 V 107 A 150 A 1.85V @ 15V, 50A 366 W 1185µJ (on), 1565µJ (off) Standard 325 nC 20ns/230ns 400V, 50A, 4.3Ohm, 15V - -55°C ~ 175°C (TJ) Through Hole
APT25GP120BG

APT25GP120BG

IGBT 1200V 69A 417W TO247

Microchip Technology
2,884 -

RFQ

APT25GP120BG

Ficha técnica

Tube POWER MOS 7® Active PT 1200 V 69 A 90 A 3.9V @ 15V, 25A 417 W 500µJ (on), 438µJ (off) Standard 110 nC 12ns/70ns 600V, 25A, 5Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
GN2470K4-G

GN2470K4-G

IC IGBT 700V 3.5A 3DPAK

Microchip Technology
2,752 -

RFQ

GN2470K4-G

Ficha técnica

Tape & Reel (TR) - Active - 700 V 1 A 3.5 A 5V @ 13V, 3A 2.5 W - Standard - 8ns/20ns - - -55°C ~ 150°C (TJ) Surface Mount
APT30GN60BDQ2G

APT30GN60BDQ2G

IGBT 600V 63A 203W TO247

Microchip Technology
2,938 -

RFQ

APT30GN60BDQ2G

Ficha técnica

Tube - Active Trench Field Stop 600 V 63 A 90 A 1.9V @ 15V, 30A 203 W 525µJ (on), 700µJ (off) Standard 165 nC 12ns/155ns 400V, 30A, 4.3Ohm, 15V - -55°C ~ 175°C (TJ) Through Hole
APT20GN60BDQ1G

APT20GN60BDQ1G

IGBT 600V 40A 136W TO247

Microchip Technology
2,105 -

RFQ

APT20GN60BDQ1G

Ficha técnica

Tube - Active Trench Field Stop 600 V 40 A 60 A 1.9V @ 15V, 20A 136 W 230µJ (on), 580µJ (off) Standard 120 nC 9ns/140ns 400V, 20A, 4.3Ohm, 15V - -55°C ~ 175°C (TJ) Through Hole
APT30GN60BG

APT30GN60BG

IGBT 600V 63A 203W TO247

Microchip Technology
2,540 -

RFQ

APT30GN60BG

Ficha técnica

Tube - Active Trench Field Stop 600 V 63 A 90 A 1.9V @ 15V, 30A 203 W 525µJ (on), 700µJ (off) Standard 165 nC 12ns/155ns 400V, 30A, 4.3Ohm, 15V - -55°C ~ 175°C (TJ) Through Hole
APT20GN60BG

APT20GN60BG

IGBT 600V 40A 136W TO247

Microchip Technology
3,254 -

RFQ

APT20GN60BG

Ficha técnica

Tube - Active Trench Field Stop 600 V 40 A 60 A 1.9V @ 15V, 20A 136 W 230µJ (on), 580µJ (off) Standard 120 nC 9ns/140ns 400V, 20A, 4.3Ohm, 15V - -55°C ~ 175°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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