Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
2SJ605-ZJ-E1-AZ

2SJ605-ZJ-E1-AZ

P-CHANNEL POWER MOSFET

Renesas Electronics America Inc
652 -

RFQ

2SJ605-ZJ-E1-AZ

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
NP82N055KHE-E1-AZ

NP82N055KHE-E1-AZ

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
800 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
NP82N055MUG-S18-AY

NP82N055MUG-S18-AY

MOSFET N-CH 55V 82A TO220

NEC Corporation
500 -

RFQ

NP82N055MUG-S18-AY

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 55 V 82A (Tc) - 6mOhm @ 41A, 10V 4V @ 250µA 160 nC @ 10 V - 9600 pF @ 25 V - 1.8W (Ta), 143W (Tc) 175°C (TJ) Through Hole
NP82N055NUG-S18-AY

NP82N055NUG-S18-AY

MOSFET N-CH 55V 82A TO262

Renesas Electronics America Inc
350 -

RFQ

NP82N055NUG-S18-AY

Ficha técnica

Tube Automotive, AEC-Q101 Obsolete N-Channel MOSFET (Metal Oxide) 55 V 82A (Tc) - 6mOhm @ 41A, 10V 4V @ 250µA 160 nC @ 10 V ±20V 9600 pF @ 25 V - 1.8W (Ta), 143W (Tc) 175°C Through Hole
2SK3234-E

2SK3234-E

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
180 -

RFQ

2SK3234-E

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IRF9233

IRF9233

MOSFET P-CH 150V 5.5A TO204AE

International Rectifier
301 -

RFQ

IRF9233

Ficha técnica

Bulk HEXFET® Active P-Channel MOSFET (Metal Oxide) 150 V 5.5A - - - - - - Standard 75W - Through Hole
FDS3170N7

FDS3170N7

MOSFET N-CH 100V 6.7A 8SO

Fairchild Semiconductor
179 -

RFQ

FDS3170N7

Ficha técnica

Bulk PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 6.7A (Ta) 6V, 10V 26mOhm @ 6.7A, 10V 4V @ 250µA 77 nC @ 10 V ±20V 2714 pF @ 50 V - 3W (Ta) -55°C ~ 150°C (TJ) Surface Mount
HUF76645S3ST

HUF76645S3ST

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
788 -

RFQ

HUF76645S3ST

Ficha técnica

Bulk UltraFET® Active N-Channel MOSFET (Metal Oxide) 100 V 75A (Tc) 4.5V, 10V 14mOhm @ 75A, 10V 3V @ 250µA 153 nC @ 10 V ±16V 4400 pF @ 25 V - 310W (Tc) -55°C ~ 175°C (TJ) Surface Mount
2SJ143(2)-S6-AZ

2SJ143(2)-S6-AZ

P-CHANNEL POWER MOSFET

Renesas Electronics America Inc
699 -

RFQ

2SJ143(2)-S6-AZ

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IXTQ42N25P

IXTQ42N25P

MOSFET N-CH 250V 42A TO3P

IXYS
3,442 -

RFQ

IXTQ42N25P

Ficha técnica

Tube Polar Active N-Channel MOSFET (Metal Oxide) 250 V 42A (Tc) 10V 84mOhm @ 500mA, 10V 5.5V @ 250µA 70 nC @ 10 V ±20V 2300 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPA030N10NF2SXKSA1

IPA030N10NF2SXKSA1

TRENCH >=100V PG-TO220-3

Infineon Technologies
3,687 -

RFQ

IPA030N10NF2SXKSA1

Ficha técnica

Tube StrongIRFET™ 2 Active N-Channel MOSFET (Metal Oxide) 100 V 83A (Tc) 6V, 10V 3mOhm @ 50A, 10V 3.8V @ 169µA 154 nC @ 10 V ±20V 7300 pF @ 50 V - 41W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFS750A

IRFS750A

MOSFET N-CH 400V 8.4A TO220F

Fairchild Semiconductor
269 -

RFQ

IRFS750A

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 400 V 8.4A (Tc) 10V 300mOhm @ 4.2A, 10V 4V @ 250µA 131 nC @ 10 V ±30V 2780 pF @ 25 V - 49W (Tc) -55°C ~ 150°C (TJ) Through Hole
2SK2738-E

2SK2738-E

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
289 -

RFQ

2SK2738-E

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
AUIRFS3206

AUIRFS3206

AUTOMOTIVE POWER MOSFET

International Rectifier
300 -

RFQ

AUIRFS3206

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 10V 3mOhm @ 75A, 10V 4V @ 150µA 170 nC @ 10 V ±20V 6540 pF @ 50 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
R6520ENXC7G

R6520ENXC7G

650V 20A TO-220FM, LOW-NOISE POW

Rohm Semiconductor
999 -

RFQ

R6520ENXC7G

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 20A (Ta) 10V 205mOhm @ 9.5A, 10V 4V @ 630µA 61 nC @ 10 V ±20V 1400 pF @ 25 V - 68W (Tc) 150°C (TJ) Through Hole
R6020ENXC7G

R6020ENXC7G

600V 20A TO-220FM, LOW-NOISE POW

Rohm Semiconductor
996 -

RFQ

R6020ENXC7G

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 20A (Ta) 10V 196mOhm @ 9.5A, 10V 4V @ 1mA 60 nC @ 10 V ±20V 1400 pF @ 25 V - 68W (Tc) 150°C (TJ) Through Hole
NP82N06NLG-S18-AY

NP82N06NLG-S18-AY

MOSFET N-CH 60V 82A TO262

Renesas Electronics America Inc
400 -

RFQ

NP82N06NLG-S18-AY

Ficha técnica

Tube Automotive, AEC-Q101 Obsolete N-Channel MOSFET (Metal Oxide) 60 V 82A (Tc) - 7.4mOhm @ 41A, 10V 2.5V @ 250µA 160 nC @ 10 V ±20V 8550 pF @ 25 V - 1.8W (Ta), 143W (Tc) 175°C Through Hole
2SK2341-AZ

2SK2341-AZ

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
258 -

RFQ

2SK2341-AZ

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
SPB160N04S2-03

SPB160N04S2-03

160A, 40V N-CHANNEL, MOSFET

Infineon Technologies
393 -

RFQ

SPB160N04S2-03

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IXTA1R4N120P

IXTA1R4N120P

MOSFET N-CH 1200V 1.4A TO263

IXYS
2,847 -

RFQ

IXTA1R4N120P

Ficha técnica

Tube Polar Active N-Channel MOSFET (Metal Oxide) 1200 V 1.4A (Tc) 10V 13Ohm @ 500mA, 10V 4.5V @ 100µA 24.8 nC @ 10 V ±20V 666 pF @ 25 V - 86W (Tc) -55°C ~ 150°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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