Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
NP80N04NLG-S18-AY

NP80N04NLG-S18-AY

MOSFET N-CH 40V 80A TO262

NEC Corporation
750 -

RFQ

NP80N04NLG-S18-AY

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) - 4.8mOhm @ 40A, 10V 2.5V @ 250µA 135 nC @ 10 V - 6900 pF @ 25 V - 1.8W (Ta), 115W (Tc) 175°C (TJ) Through Hole
2SK972-94-E

2SK972-94-E

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
537 -

RFQ

Bulk * Obsolete - - - - - - - - - - - - - -
NP80N04NDG-S18-AY

NP80N04NDG-S18-AY

MOSFET N-CH 40V 80A TO262

Renesas Electronics America Inc
400 -

RFQ

NP80N04NDG-S18-AY

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) - 4.8mOhm @ 40A, 10V 2.5V @ 250µA 135 nC @ 10 V - 6900 pF @ 25 V - 1.8W (Ta), 115W (Tc) 175°C (TJ) Through Hole
NP80N03MLE-S18-AY

NP80N03MLE-S18-AY

MOSFET N-CH 30V 80A TO220

Renesas Electronics America Inc
300 -

RFQ

NP80N03MLE-S18-AY

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 80A (Tc) - 7mOhm @ 40A, 10V 2.5V @ 250µA 72 nC @ 10 V - 3900 pF @ 25 V - 1.8W (Ta), 120W (Tc) 175°C (TJ) Through Hole
IPI65R190C

IPI65R190C

N-CHANNEL POWER MOSFET

Infineon Technologies
500 -

RFQ

IPI65R190C

Ficha técnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 650 V 20.2A (Tc) 10V 190mOhm @ 7.3A, 10V 3.5V @ 730µA 73 nC @ 10 V ±20V 1620 pF @ 100 V - 151W (Tc) -55°C ~ 150°C (TJ) Through Hole
2SJ245L-E

2SJ245L-E

P-CHANNEL POWER MOSFET

Renesas Electronics America Inc
242 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
IXTJ4N150

IXTJ4N150

MOSFET N-CH 1500V 2.5A TO247

IXYS
3,767 -

RFQ

IXTJ4N150

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 1500 V 2.5A (Tc) 10V 6Ohm @ 2A, 10V 5V @ 250µA 44.5 nC @ 10 V ±30V 1576 pF @ 25 V - 110W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFH86N30T

IXFH86N30T

MOSFET N-CH 300V 86A TO247AD

IXYS
2,638 -

RFQ

IXFH86N30T

Ficha técnica

Tube HiPerFET™, Trench Active N-Channel MOSFET (Metal Oxide) 300 V 86A (Tc) 10V 43mOhm @ 43A, 10V 5V @ 4mA 180 nC @ 10 V ±20V 11300 pF @ 25 V - 860W (Tc) -55°C ~ 150°C (TJ) Through Hole
2SK2485-A

2SK2485-A

POWER FIELD-EFFECT TRANSISTOR

Renesas Electronics America Inc
368 -

RFQ

2SK2485-A

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
RJK60S4DPE-WS#J3

RJK60S4DPE-WS#J3

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
320 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
FS25SM-9A#B10

FS25SM-9A#B10

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
692 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
MSCSM120DAM31CTBL1NG

MSCSM120DAM31CTBL1NG

PM-MOSFET-SIC-SBD-BL1

Microchip Technology
3,495 -

RFQ

MSCSM120DAM31CTBL1NG

Ficha técnica

Bulk - Active N-Channel SiCFET (Silicon Carbide) 1200 V 79A 20V 31mOhm @ 40A, 20V 2.8V @ 1mA 232 nC @ 20 V +25V, -10V 3020 pF @ 1000 V - 310W -55°C ~ 175°C (TJ) Chassis Mount
IXFN90N170SK

IXFN90N170SK

SICFET N-CH 1700V 90A SOT227B

IXYS
2,661 -

RFQ

Tube - Active N-Channel SiCFET (Silicon Carbide) 1700 V 90A (Tc) 20V 35mOhm @ 100A, 20V 4V @ 36mA 376 nC @ 20 V +20V, -5V 7340 pF @ 1000 V - - -40°C ~ 150°C (TJ) Chassis Mount
VMO550-01F

VMO550-01F

MOSFET N-CH 100V 590A Y3-DCB

IXYS
3,363 -

RFQ

VMO550-01F

Ficha técnica

Bulk HiPerFET™ Active N-Channel MOSFET (Metal Oxide) 100 V 590A (Tc) 10V 2.1mOhm @ 500mA, 10V 6V @ 110mA 2000 nC @ 10 V ±20V 50000 pF @ 25 V - 2200W (Tc) -40°C ~ 150°C (TJ) Chassis Mount
SSM6K781G,LF

SSM6K781G,LF

MOSFET N-CH 12V 7A 6WCSP6C

Toshiba Semiconductor and Storage
500 -

RFQ

SSM6K781G,LF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSVII-H Active N-Channel MOSFET (Metal Oxide) 12 V 7A (Ta) 1.5V, 4.5V 18mOhm @ 1.5A, 4.5V 1V @ 250µA 5.4 nC @ 4.5 V ±8V 600 pF @ 6 V - 1.6W (Ta) 150°C (TJ) Surface Mount
PMF170XP,115

PMF170XP,115

MOSFET P-CH 20V 1A SOT323

Nexperia USA Inc.
468 -

RFQ

PMF170XP,115

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 20 V 1A (Ta) 4.5V 200mOhm @ 1A, 4.5V 1.15V @ 250µA 3.9 nC @ 4.5 V ±12V 280 pF @ 10 V - 290mW (Ta), 1.67W (Tc) -55°C ~ 150°C (TJ) Surface Mount
DMP2130LDM-7

DMP2130LDM-7

MOSFET P-CH 20V 3.4A SOT-26

Diodes Incorporated
115 -

RFQ

DMP2130LDM-7

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 20 V 3.4A (Ta) 2.5V, 4.5V 80mOhm @ 4.5A, 4.5V 1.25V @ 250µA 7.3 nC @ 4.5 V ±12V 443 pF @ 16 V - 1.25W -55°C ~ 150°C (TJ) Surface Mount
AO3406

AO3406

MOSFET N-CH 30V 3.6A SOT23-3L

Alpha & Omega Semiconductor Inc.
12,355 -

RFQ

AO3406

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Not For New Designs N-Channel MOSFET (Metal Oxide) 30 V 3.6A (Ta) 4.5V, 10V 50mOhm @ 3.6A, 10V 2.5V @ 250µA 5 nC @ 10 V ±20V 210 pF @ 15 V - 1.4W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI2312-TP

SI2312-TP

MOSFET N-CH 20V 5A SOT23

Micro Commercial Co
680 -

RFQ

SI2312-TP

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 20 V 5A (Ta) 4.5V 41mOhm @ 4.3A, 1.8V 1V @ 250µA - ±8V 865 pF @ 10 V - 350mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
MTM761230LBF

MTM761230LBF

MOSFET P-CH 20V 3A WSMINI6

Panasonic Electronic Components
429 -

RFQ

MTM761230LBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Obsolete P-Channel MOSFET (Metal Oxide) 20 V 3A (Ta) 2.5V, 4V 55mOhm @ 1A, 4V 1.3V @ 1mA - ±10V 1000 pF @ 10 V - 700mW (Ta) 150°C (TJ) Surface Mount
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1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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