Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRF9541

IRF9541

P-CHANNEL POWER MOSFET

Harris Corporation
4,901 -

RFQ

IRF9541

Ficha técnica

Bulk - Active P-Channel MOSFET (Metal Oxide) 80 V 19A (Tc) 10V 200mOhm @ 10A, 10V 4V @ 250µA 90 nC @ 10 V ±20V 1100 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
FQP11N50CF

FQP11N50CF

MOSFET N-CH 500V 11A TO220-3

Fairchild Semiconductor
2,116 -

RFQ

FQP11N50CF

Ficha técnica

Tube FRFET® Obsolete N-Channel MOSFET (Metal Oxide) 500 V 11A (Tc) 10V 550mOhm @ 5.5A, 10V 4V @ 250µA 55 nC @ 10 V ±30V 2055 pF @ 25 V - 195W (Tc) -55°C ~ 150°C (TJ) Through Hole
HAT1139H-EL-E

HAT1139H-EL-E

P-CHANNEL POWER MOSFET

Renesas Electronics America Inc
1,500 -

RFQ

HAT1139H-EL-E

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
2SK3058-Z-E1-AZ

2SK3058-Z-E1-AZ

N-CHANNEL POWER MOSFET

NEC Corporation
1,000 -

RFQ

2SK3058-Z-E1-AZ

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
SPA11N65C3XKSA1

SPA11N65C3XKSA1

MOSFET N-CH 650V 11A TO220-FP

Infineon Technologies
3,650 -

RFQ

SPA11N65C3XKSA1

Ficha técnica

Tube CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 11A (Tc) 10V 380mOhm @ 7A, 10V 3.9V @ 500µA 60 nC @ 10 V ±20V 1200 pF @ 25 V - 33W (Tc) -55°C ~ 150°C (TJ) Through Hole
HUF75345P3_NL

HUF75345P3_NL

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
252 -

RFQ

HUF75345P3_NL

Ficha técnica

Bulk UltraFET® Active N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 7mOhm @ 75A, 10V 4V @ 250µA 275 nC @ 20 V ±20V 4000 pF @ 25 V - 325W (Tc) -55°C ~ 175°C (TJ) Through Hole
AUIRL1404S

AUIRL1404S

PFET, 160A I(D), 40V, 0.004OHM

International Rectifier
2,225 -

RFQ

AUIRL1404S

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 160A (Tc) 4.3V, 10V 4mOhm @ 95A, 10V 3V @ 250µA 140 nC @ 5 V ±20V 6600 pF @ 25 V - 3.8W (Ta), 200W (Tc) -55°C ~ 175°C (TJ)
AUIRL1404STRL

AUIRL1404STRL

AUTOMOTIVE POWER MOSFET

International Rectifier
820 -

RFQ

AUIRL1404STRL

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 160A (Tc) 4.3V, 10V 4mOhm @ 95A, 10V 3V @ 250µA 140 nC @ 5 V ±20V 6600 pF @ 25 V - 3.8W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
2SJ387L-E

2SJ387L-E

P-CHANNEL POWER MOSFET

Renesas Electronics America Inc
446 -

RFQ

2SJ387L-E

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
HUF76137S3S

HUF76137S3S

N-CHANNEL POWER MOSFET

Harris Corporation
197 -

RFQ

HUF76137S3S

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 30 V 75A (Tc) 4.5V, 10V 9mOhm @ 75A, 10V 3V @ 250µA 72 nC @ 10 V ±16V 2100 pF @ 25 V - 145W (Tc) -40°C ~ 150°C (TJ) Surface Mount
SPI20N60CFD

SPI20N60CFD

N-CHANNEL POWER MOSFET

Infineon Technologies
168 -

RFQ

SPI20N60CFD

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
R6520KNX3C16

R6520KNX3C16

650V 20A, TO-220AB, HIGH-SPEED S

Rohm Semiconductor
973 -

RFQ

R6520KNX3C16

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 20A (Tc) 10V 205mOhm @9.5A, 10V 5V @ 630µA 40 nC @ 10 V ±20V 1550 pF @ 25 V - 220W (Tc) 150°C (TJ) Through Hole
SN74CBT16245DGG

SN74CBT16245DGG

IC 16-BIT FET BUS SW 48-TSSOP

Texas Instruments
4,770 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
MTAJ50N05HDLFK

MTAJ50N05HDLFK

NFET T0220FP JPN

onsemi
935 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
IRFD320

IRFD320

MOSFET N-CH 400V 490MA 4HVMDIP

Harris Corporation
812 -

RFQ

IRFD320

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 400 V 490mA (Ta) - 1.8Ohm @ 210mA, 10V 4V @ 250µA 20 nC @ 10 V ±20V 410 pF @ 25 V - 1W (Ta) -55°C ~ 150°C (TJ) Through Hole
2SK1459LS

2SK1459LS

N-CHANNEL SILICON MOSFET

onsemi
1,308 -

RFQ

2SK1459LS

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
BTS130-E3045A

BTS130-E3045A

N-CHANNEL POWER MOSFET

Infineon Technologies
814 -

RFQ

BTS130-E3045A

Ficha técnica

Bulk * Obsolete - - - - - - - - - - - - - -
IRFP352

IRFP352

N-CHANNEL POWER MOSFET

Harris Corporation
436 -

RFQ

IRFP352

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 400 V 14A (Tc) 10V 400mOhm @ 8.9A, 10V 4V @ 250µA 130 nC @ 10 V ±20V 2000 pF @ 25 V - 180W (Tc) -55°C ~ 150°C (TJ) Through Hole
ISL9N302AS3

ISL9N302AS3

MOSFET N-CH 30V 75A TO-262AA

Fairchild Semiconductor
400 -

RFQ

Bulk UltraFET™ Active N-Channel MOSFET (Metal Oxide) 30 V 75A (Tc) 4.5V, 10V 2.3mOhm @ 75A, 10V 3V @ 250µA 300 nC @ 10 V ±20V 11000 pF @ 15 V - 345W (Tc) - Through Hole
NP80N04PDG-E1B-AY

NP80N04PDG-E1B-AY

MOSFET N-CH 40V 80A TO263-3

Renesas Electronics America Inc
1,000 -

RFQ

NP80N04PDG-E1B-AY

Ficha técnica

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) - 4.5mOhm @ 40A, 10V 2.5V @ 250µA 135 nC @ 10 V - 6900 pF @ 25 V - 1.8W (Ta), 115W (Tc) 175°C (TJ) Surface Mount
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1500+ Promedio diario de RFQ
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1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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