Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
2SK1421

2SK1421

N-CHANNEL POWER MOSFET

onsemi
2,888 -

RFQ

2SK1421

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
AUIRF1405

AUIRF1405

MOSFET N-CH 55V 75A TO220AB

International Rectifier
1,179 -

RFQ

AUIRF1405

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) - 5.3mOhm @ 101A, 10V 4V @ 250µA 260 nC @ 10 V ±20V 5480 pF @ 25 V - 330W (Tc) -55°C ~ 175°C (TJ) Through Hole
FDI040N06

FDI040N06

MOSFET N-CH 60V 120A I2PAK

Fairchild Semiconductor
252 -

RFQ

FDI040N06

Ficha técnica

Tube PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 10V 4mOhm @ 75A, 10V 4.5V @ 250µA 133 nC @ 10 V ±20V 8235 pF @ 25 V - 231W (Tc) -55°C ~ 175°C (TJ) Through Hole
NP80N055MDG-S18-AY

NP80N055MDG-S18-AY

MOSFET N-CH 55V 80A TO220

NEC Corporation
6,350 -

RFQ

NP80N055MDG-S18-AY

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) - 6.9mOhm @ 40A, 10V 2.5V @ 250µA 135 nC @ 10 V - 6900 pF @ 25 V - 1.8W (Ta), 115W (Tc) 175°C (TJ) Through Hole
MTV32N20E

MTV32N20E

N-CHANNEL POWER MOSFET

onsemi
6,325 -

RFQ

MTV32N20E

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
RF1S9530

RF1S9530

-12A, -100V, 0.3 OHM, P-CHANNEL

Harris Corporation
5,418 -

RFQ

RF1S9530

Ficha técnica

Bulk - Active P-Channel MOSFET (Metal Oxide) 100 V 12A (Tc) 10V 300mOhm @ 6.5A, 10V 4V @ 250µA 45 nC @ 10 V ±20V 500 pF @ 25 V - 75W (Tc) -55°C ~ 150°C (TJ) Through Hole
NP80N055PDG-E1B-AY

NP80N055PDG-E1B-AY

MOSFET N-CH 55V 80A TO263

Renesas Electronics America Inc
5,000 -

RFQ

NP80N055PDG-E1B-AY

Ficha técnica

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) - 6.6mOhm @ 40A, 10V 2.5V @ 250µA 135 nC @ 10 V - 6900 pF @ 25 V - 1.8W (Ta), 115W (Tc) 175°C (TJ) Surface Mount
NTE2379

NTE2379

MOSFET N-CHANNEL 600V 6.2A TO220

NTE Electronics, Inc
3,677 -

RFQ

NTE2379

Ficha técnica

Bag - Active N-Channel MOSFET (Metal Oxide) 600 V 6.2A (Tc) 10V 1.2Ohm @ 3.7A, 10V 4V @ 250µA 60 nC @ 10 V ±20V 1300 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDP040N06

FDP040N06

MOSFET N-CH 60V 120A TO220-3

Fairchild Semiconductor
800 -

RFQ

FDP040N06

Ficha técnica

Tube PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 10V 4mOhm @ 75A, 10V 4.5V @ 250µA 133 nC @ 10 V ±20V 8235 pF @ 25 V - 231W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPI320N203G

IPI320N203G

N-CHANNEL POWER MOSFET

Infineon Technologies
350 -

RFQ

IPI320N203G

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
FQA14N30

FQA14N30

MOSFET N-CH 300V 15A TO3P

Fairchild Semiconductor
230 -

RFQ

FQA14N30

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 300 V 15A (Tc) 10V 290mOhm @ 7.5A, 10V 5V @ 250µA 40 nC @ 10 V ±30V 1360 pF @ 25 V - 160W (Tc) -55°C ~ 150°C (TJ) Through Hole
UPA2750GR(1)-E1-A

UPA2750GR(1)-E1-A

SMALL SIGNAL N-CHANNEL MOSFET

Renesas Electronics America Inc
5,000 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
RFP6N50

RFP6N50

N-CHANNEL POWER MOSFET

Harris Corporation
1,793 -

RFQ

RFP6N50

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 500 V 6A (Tc) 10V 1.25Ohm @ 3A, 10V 4V @ 1mA - ±20V 1500 pF @ 25 V - 75W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPW65R190E6

IPW65R190E6

N-CHANNEL POWER MOSFET

Infineon Technologies
539 -

RFQ

IPW65R190E6

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
AUIRFSL3206

AUIRFSL3206

AUTOMOTIVE HEXFET N CHANNEL

International Rectifier
250 -

RFQ

AUIRFSL3206

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) - 3mOhm @ 75A, 10V 4V @ 150µA 170 nC @ 10 V - 6540 pF @ 50 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
SPW11N60CFD

SPW11N60CFD

N-CHANNEL POWER MOSFET

Infineon Technologies
391 -

RFQ

SPW11N60CFD

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
NP90N03VUG-E1-AY

NP90N03VUG-E1-AY

MOSFET N-CH 30V 90A TO252

Renesas Electronics America Inc
10,000 -

RFQ

NP90N03VUG-E1-AY

Ficha técnica

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 90A (Tc) - 3.2mOhm @ 45A, 10V 4V @ 250µA 135 nC @ 10 V - 7500 pF @ 25 V - 1.2W (Ta), 105W (Tc) 175°C (TJ) Surface Mount
AUIRFS4410Z

AUIRFS4410Z

AUTOMOTIVE HEXFET N CHANNEL

International Rectifier
8,655 -

RFQ

AUIRFS4410Z

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 97A (Tc) 10V 9mOhm @ 58A, 10V 4V @ 150µA 120 nC @ 10 V ±20V 4820 pF @ 50 V - 230W (Tc) -55°C ~ 175°C (TJ) Surface Mount
UPA2731T1A-E1-AZ

UPA2731T1A-E1-AZ

P-CHANNEL POWER MOSFET

Renesas Electronics America Inc
6,000 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
FDB6670AS

FDB6670AS

MOSFET N-CH 30V 62A TO263AB

Fairchild Semiconductor
5,998 -

RFQ

FDB6670AS

Ficha técnica

Bulk PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 62A (Ta) 4.5V, 10V 8.5mOhm @ 31A, 10V 3V @ 1mA 39 nC @ 15 V ±20V 1570 pF @ 15 V - 62.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
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1500+ Promedio diario de RFQ
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1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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