Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
TSM70N10CP ROG

TSM70N10CP ROG

MOSFET N-CHANNEL 100V 70A TO252

Taiwan Semiconductor Corporation
3,959 -

RFQ

TSM70N10CP ROG

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 100 V 70A (Tc) 10V 13mOhm @ 30A, 10V 4V @ 250µA 145 nC @ 10 V ±20V 4300 pF @ 30 V - 120W (Tc) -55°C ~ 150°C (TJ) Surface Mount
TSM7N65ACI C0G

TSM7N65ACI C0G

MOSFET N-CH 650V 7A ITO220AB

Taiwan Semiconductor Corporation
2,779 -

RFQ

TSM7N65ACI C0G

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 650 V 7A (Tc) 10V 1.45Ohm @ 3A, 10V 4V @ 250µA 27.8 nC @ 10 V ±30V 1406 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) Through Hole
TSM7N90CZ C0G

TSM7N90CZ C0G

MOSFET N-CHANNEL 900V 7A TO220

Taiwan Semiconductor Corporation
2,017 -

RFQ

TSM7N90CZ C0G

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 900 V 7A (Tc) 10V 1.9Ohm @ 3.5A, 10V 4V @ 250µA 49 nC @ 10 V ±30V 1969 pF @ 25 V - 40.3W (Tc) -55°C ~ 150°C (TJ) Through Hole
TSM80N08CZ C0G

TSM80N08CZ C0G

MOSFET N-CHANNEL 75V 80A TO220

Taiwan Semiconductor Corporation
3,747 -

RFQ

TSM80N08CZ C0G

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 75 V 80A (Tc) 10V 8mOhm @ 40A, 10V 4V @ 250µA 91.5 nC @ 10 V ±20V 3905 pF @ 30 V - 113.6W (Tc) -55°C ~ 150°C (TJ) Through Hole
TSM85N10CZ C0G

TSM85N10CZ C0G

MOSFET N-CHANNEL 100V 81A TO220

Taiwan Semiconductor Corporation
2,685 -

RFQ

TSM85N10CZ C0G

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 100 V 81A (Tc) 10V 10mOhm @ 40A, 10V 4V @ 250µA 154 nC @ 10 V ±20V 3900 pF @ 30 V - 210W (Tc) -55°C ~ 150°C (TJ) Through Hole
TSM9N90ECI C0G

TSM9N90ECI C0G

MOSFET N-CH 900V 9A ITO220AB

Taiwan Semiconductor Corporation
2,183 -

RFQ

TSM9N90ECI C0G

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 900 V 9A (Tc) 10V 1.4Ohm @ 4.5A, 10V 4V @ 250µA 72 nC @ 10 V ±30V 2470 pF @ 25 V - 89W (Tc) -55°C ~ 150°C (TJ) Through Hole
TSM9N90ECZ C0G

TSM9N90ECZ C0G

MOSFET N-CHANNEL 900V 9A TO220

Taiwan Semiconductor Corporation
2,859 -

RFQ

TSM9N90ECZ C0G

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 900 V 9A (Tc) 10V 1.4Ohm @ 4.5A, 10V 4V @ 250µA 72 nC @ 10 V ±30V 2470 pF @ 25 V - 89W (Tc) -55°C ~ 150°C (TJ) Through Hole
TSM2N7000KCT B0G

TSM2N7000KCT B0G

MOSFET N-CHANNEL 60V 300MA TO92

Taiwan Semiconductor Corporation
2,153 -

RFQ

TSM2N7000KCT B0G

Ficha técnica

Box - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 300mA (Ta) 5V, 10V 5Ohm @ 100mA, 10V 2.5V @ 250µA 0.4 nC @ 4.5 V ±20V 60 pF @ 25 V - 400mW (Ta) -55°C ~ 150°C (TJ) Through Hole
TSM126CX RFG

TSM126CX RFG

MOSFET N-CH 600V 30MA SOT23

Taiwan Semiconductor Corporation
3,918 -

RFQ

TSM126CX RFG

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 600 V 30mA (Tc) 0V, 10V 800Ohm @ 16mA, 10V 1V @ 8µA 1.18 nC @ 4.5 V ±20V 51.42 pF @ 25 V Depletion Mode 500mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
TSM160P04LCRHRLG

TSM160P04LCRHRLG

MOSFET P-CH 40V 51A 8PDFN

Taiwan Semiconductor Corporation
3,458 -

RFQ

TSM160P04LCRHRLG

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active P-Channel MOSFET (Metal Oxide) 40 V 51A (Tc) 4.5V, 10V 16mOhm @ 10A, 10V 2.5V @ 250µA 48 nC @ 10 V ±20V 2712 pF @ 20 V - 69W (Tc) -55°C ~ 150°C (TJ) Surface Mount
TSM60NB190CF C0G

TSM60NB190CF C0G

MOSFET N-CH 600V 18A ITO220S

Taiwan Semiconductor Corporation
3,714 -

RFQ

TSM60NB190CF C0G

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 18A (Tc) 10V 190mOhm @ 3.7A, 10V 4V @ 250µA 32 nC @ 10 V ±30V 1311 pF @ 100 V - 59.5W (Tc) -55°C ~ 150°C (TJ) Through Hole
TSM301K12CQ RFG

TSM301K12CQ RFG

MOSFET P-CH 20V 4.5A 6TDFN

Taiwan Semiconductor Corporation
9,584 -

RFQ

TSM301K12CQ RFG

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 20 V 4.5A (Ta) 1.8V, 4.5V 94mOhm @ 2.8A, 4.5V 500mV @ 250µA (Min) 4.5 nC @ 4.5 V ±12V 5.2 pF @ 6 V - 6.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
TSM085N03PQ33 RGG

TSM085N03PQ33 RGG

MOSFET N-CH 30V 52A 8PDFN

Taiwan Semiconductor Corporation
8,228 -

RFQ

TSM085N03PQ33 RGG

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 30 V 52A (Tc) 4.5V, 10V 8.5mOhm @ 13A, 10V 2.5V @ 250µA 14.3 nC @ 10 V ±20V 817 pF @ 15 V - 37W (Tc) -55°C ~ 150°C (TJ) Surface Mount
TSM1NB60CP ROG

TSM1NB60CP ROG

MOSFET N-CHANNEL 600V 1A TO252

Taiwan Semiconductor Corporation
9,479 -

RFQ

TSM1NB60CP ROG

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 600 V 1A (Tc) 10V 10Ohm @ 500mA, 10V 4.5V @ 250µA 6.1 nC @ 10 V ±30V 138 pF @ 25 V - 39W (Tc) -55°C ~ 150°C (TJ) Surface Mount
TSM4NC50CP ROG

TSM4NC50CP ROG

MOSFET N-CHANNEL 500V 4A TO252

Taiwan Semiconductor Corporation
9,895 -

RFQ

TSM4NC50CP ROG

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 500 V 4A (Tc) 10V 2.7Ohm @ 1.7A, 10V 3V @ 250µA 12 nC @ 10 V ±20V 453 pF @ 50 V - 83W (Tc) -55°C ~ 150°C (TJ) Surface Mount
TSM033NB04CR RLG

TSM033NB04CR RLG

MOSFET N-CH 40V 21A/121A 8PDFN

Taiwan Semiconductor Corporation
3,650 -

RFQ

TSM033NB04CR RLG

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 40 V 21A (Ta), 121A (Tc) 10V 3.3mOhm @ 21A, 10V 4V @ 250µA 77 nC @ 10 V ±20V 5022 pF @ 20 V - 3.1W (Ta), 107W (Tc) -55°C ~ 175°C (TJ) Surface Mount
TSM4ND65CI

TSM4ND65CI

MOSFET N-CH 650V 4A ITO220

Taiwan Semiconductor Corporation
3,877 -

RFQ

TSM4ND65CI

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 4A (Tc) 10V 2.6Ohm @ 1.2A, 10V 3.8V @ 250µA 16.8 nC @ 10 V ±30V 596 pF @ 50 V - 41.6W (Tc) -55°C ~ 150°C (TJ) Through Hole
TSM4806CS RLG

TSM4806CS RLG

MOSFET N-CHANNEL 20V 28A 8SOP

Taiwan Semiconductor Corporation
2,027 -

RFQ

TSM4806CS RLG

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 20 V 28A (Ta) 1.8V, 4.5V 20mOhm @ 20A, 4.5V 1V @ 250µA 12.3 nC @ 4.5 V ±8V 961 pF @ 15 V - 2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
TSM60NB900CH C5G

TSM60NB900CH C5G

MOSFET N-CHANNEL 600V 4A TO251

Taiwan Semiconductor Corporation
14,043 -

RFQ

TSM60NB900CH C5G

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 4A (Tc) 10V 900mOhm @ 1.2A, 10V 4V @ 250µA 9.6 nC @ 10 V ±30V 315 pF @ 100 V - 36.8W (Tc) -55°C ~ 150°C (TJ) Through Hole
TSM3457CX6 RFG

TSM3457CX6 RFG

MOSFET P-CHANNEL 30V 5A SOT26

Taiwan Semiconductor Corporation
3,098 -

RFQ

TSM3457CX6 RFG

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 30 V 5A (Ta) 4.5V, 10V 60mOhm @ 5A, 10V 3V @ 250µA 27 nC @ 10 V ±20V 551.57 pF @ 15 V - 2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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