Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
TSM1NB60SCT A3G

TSM1NB60SCT A3G

MOSFET N-CH 600V 500MA TO92

Taiwan Semiconductor Corporation
2,772 -

RFQ

TSM1NB60SCT A3G

Ficha técnica

Cut Tape (CT),Tape & Box (TB) - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 500mA (Tc) 10V 10Ohm @ 250mA, 10V 4.5V @ 250µA 6.1 nC @ 10 V ±30V 138 pF @ 25 V - 2.5W (Tc) -55°C ~ 150°C (TJ) Through Hole
TSM1NB60SCT B0G

TSM1NB60SCT B0G

MOSFET N-CH 600V 500MA TO92

Taiwan Semiconductor Corporation
2,944 -

RFQ

TSM1NB60SCT B0G

Ficha técnica

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 500mA (Tc) 10V 10Ohm @ 250mA, 10V 4.5V @ 250µA 6.1 nC @ 10 V ±30V 138 pF @ 25 V - 2.5W (Tc) -55°C ~ 150°C (TJ) Through Hole
TSM210N06CZ C0G

TSM210N06CZ C0G

MOSFET N-CHANNEL 60V 210A TO220

Taiwan Semiconductor Corporation
2,402 -

RFQ

TSM210N06CZ C0G

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 210A (Tc) 10V 3.1mOhm @ 90A, 10V 4V @ 250µA 160 nC @ 10 V ±20V 7900 pF @ 30 V - 250W (Tc) -55°C ~ 150°C (TJ) Through Hole
TSM2301BCX RFG

TSM2301BCX RFG

MOSFET P-CHANNEL 20V 2.8A SOT23

Taiwan Semiconductor Corporation
3,179 -

RFQ

TSM2301BCX RFG

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Obsolete P-Channel MOSFET (Metal Oxide) 20 V 2.8A (Tc) 1.8V, 4.5V 100mOhm @ 2.8A, 4.5V 950mV @ 250µA 4.5 nC @ 4.5 V ±8V 415 pF @ 6 V - 900mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
TSM2301CX RFG

TSM2301CX RFG

MOSFET P-CHANNEL 20V 2.8A SOT23

Taiwan Semiconductor Corporation
2,688 -

RFQ

TSM2301CX RFG

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Obsolete P-Channel MOSFET (Metal Oxide) 20 V 2.8A (Tc) 2.5V, 4.5V 130mOhm @ 2.8A, 4.5V 950mV @ 250µA 4.5 nC @ 4.5 V ±8V 447 pF @ 6 V - 900mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
TSM2303CX RFG

TSM2303CX RFG

MOSFET P-CHANNEL 30V 1.3A SOT23

Taiwan Semiconductor Corporation
3,904 -

RFQ

TSM2303CX RFG

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Obsolete P-Channel MOSFET (Metal Oxide) 30 V 1.3A (Ta) 4.5V, 10V 180mOhm @ 1.3A, 10V 3V @ 250µA 3.2 nC @ 4.5 V ±20V 565 pF @ 10 V - 700mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
TSM2311CX RFG

TSM2311CX RFG

MOSFET P-CHANNEL 20V 4A SOT23

Taiwan Semiconductor Corporation
3,455 -

RFQ

Tape & Reel (TR),Cut Tape (CT) - Obsolete P-Channel MOSFET (Metal Oxide) 20 V 4A (Ta) 2.5V, 4.5V 55mOhm @ 4A, 4.5V 1.4V @ 250µA 6 nC @ 4.5 V ±8V 640 pF @ 6 V - 900mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
TSM2N7002KCX RFG

TSM2N7002KCX RFG

MOSFET N-CH 60V 300MA SOT23

Taiwan Semiconductor Corporation
3,563 -

RFQ

TSM2N7002KCX RFG

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 300mA (Ta) 4.5V, 10V 2Ohm @ 300mA, 10V 2.5V @ 250µA 0.4 nC @ 4.5 V ±20V 30 pF @ 25 V - 300mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
TSM2NB60CH C5G

TSM2NB60CH C5G

MOSFET N-CHANNEL 600V 2A TO251

Taiwan Semiconductor Corporation
3,452 -

RFQ

TSM2NB60CH C5G

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 2A (Tc) 10V 4.4Ohm @ 1A, 10V 4.5V @ 250µA 9.4 nC @ 10 V ±30V 249 pF @ 25 V - 44W (Tc) -55°C ~ 150°C (TJ) Through Hole
TSM2NB65CH X0G

TSM2NB65CH X0G

MOSFET N-CHANNEL 650V 2A TO251

Taiwan Semiconductor Corporation
2,568 -

RFQ

TSM2NB65CH X0G

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 650 V 2A (Tc) 10V 5Ohm @ 1A, 10V 4V @ 250µA 13 nC @ 10 V ±20V 390 pF @ 25 V - 65W (Tc) -55°C ~ 150°C (TJ) Through Hole
TSM2NB65CP ROG

TSM2NB65CP ROG

MOSFET N-CHANNEL 650V 2A TO252

Taiwan Semiconductor Corporation
2,484 -

RFQ

TSM2NB65CP ROG

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 650 V 2A (Tc) 10V 5Ohm @ 1A, 10V 4V @ 250µA 13 nC @ 10 V ±20V 390 pF @ 25 V - 65W (Tc) -55°C ~ 150°C (TJ) Surface Mount
TSM3404CX RFG

TSM3404CX RFG

MOSFET N-CHANNEL 30V 5.8A SOT23

Taiwan Semiconductor Corporation
2,718 -

RFQ

TSM3404CX RFG

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 5.8A (Ta) 4.5V, 10V 30mOhm @ 5.8A, 10V 3V @ 250µA 13.8 nC @ 10 V ±20V 400.96 pF @ 15 V - 750mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
TSM3N100CP ROG

TSM3N100CP ROG

MOSFET N-CH 1000V 2.5A TO252

Taiwan Semiconductor Corporation
2,139 -

RFQ

TSM3N100CP ROG

Ficha técnica

Cut Tape (CT) - Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 1000 V 2.5A (Tc) 10V 6Ohm @ 1.25A, 10V 5.5V @ 250µA 19 nC @ 10 V ±30V 664 pF @ 25 V - 99W (Tc) -55°C ~ 150°C (TJ) Surface Mount
TSM3N80CH C5G

TSM3N80CH C5G

MOSFET N-CHANNEL 800V 3A TO251

Taiwan Semiconductor Corporation
2,539 -

RFQ

TSM3N80CH C5G

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 800 V 3A (Tc) 10V 4.2Ohm @ 1.5A, 10V 4V @ 250µA 19 nC @ 10 V ±30V 696 pF @ 25 V - 94W (Tc) -55°C ~ 150°C (TJ) Through Hole
TSM3N80CI C0G

TSM3N80CI C0G

MOSFET N-CH 800V 3A ITO220AB

Taiwan Semiconductor Corporation
2,278 -

RFQ

TSM3N80CI C0G

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 800 V 3A (Tc) 10V 4.2Ohm @ 1.5A, 10V 4V @ 250µA 19 nC @ 10 V ±30V 696 pF @ 25 V - 94W (Tc) -55°C ~ 150°C (TJ) Through Hole
TSM3N80CP ROG

TSM3N80CP ROG

MOSFET N-CHANNEL 800V 3A TO252

Taiwan Semiconductor Corporation
3,774 -

RFQ

TSM3N80CP ROG

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 800 V 3A (Tc) 10V 4.2Ohm @ 1.5A, 10V 4V @ 250µA 19 nC @ 10 V ±30V 696 pF @ 25 V - 94W (Tc) -55°C ~ 150°C (TJ) Surface Mount
TSM3N80CZ C0G

TSM3N80CZ C0G

MOSFET N-CHANNEL 800V 3A TO220

Taiwan Semiconductor Corporation
2,038 -

RFQ

TSM3N80CZ C0G

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 800 V 3A (Tc) 10V 4.2Ohm @ 1.5A, 10V 4V @ 250µA 19 nC @ 10 V ±30V 696 pF @ 25 V - 94W (Tc) -55°C ~ 150°C (TJ) Through Hole
TSM3N90CH C5G

TSM3N90CH C5G

MOSFET N-CH 900V 2.5A TO251

Taiwan Semiconductor Corporation
2,865 -

RFQ

TSM3N90CH C5G

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 900 V 2.5A (Tc) 10V 5.1Ohm @ 1.25A, 10V 4V @ 250µA 17 nC @ 10 V ±30V 748 pF @ 25 V - 94W (Tc) 150°C (TJ) Through Hole
TSM680P06CH X0G

TSM680P06CH X0G

MOSFET P-CHANNEL 60V 18A TO251

Taiwan Semiconductor Corporation
15,800 -

RFQ

TSM680P06CH X0G

Ficha técnica

Tube - Active P-Channel MOSFET (Metal Oxide) 60 V 18A (Tc) 4.5V, 10V 68mOhm @ 6A, 10V 2.2V @ 250µA 16.4 nC @ 10 V ±20V 870 pF @ 30 V - 20W (Tc) -55°C ~ 150°C (TJ) Through Hole
TSM3N90CI C0G

TSM3N90CI C0G

MOSFET N-CH 900V 2.5A ITO220AB

Taiwan Semiconductor Corporation
2,211 -

RFQ

TSM3N90CI C0G

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 900 V 2.5A (Tc) 10V 5.1Ohm @ 1.25A, 10V 4V @ 250µA 17 nC @ 10 V ±30V 748 pF @ 25 V - 94W (Tc) 150°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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