Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
TSM7ND65CI

TSM7ND65CI

MOSFET N-CH 650V 7A ITO220

Taiwan Semiconductor Corporation
3,916 -

RFQ

TSM7ND65CI

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 7A (Tc) 10V 1.35Ohm @ 1.8A, 10V 3.8V @ 250µA 25 nC @ 10 V ±30V 1124 pF @ 50 V - 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
TSM3481CX6 RFG

TSM3481CX6 RFG

MOSFET P-CHANNEL 30V 5.7A SOT26

Taiwan Semiconductor Corporation
2,682 -

RFQ

TSM3481CX6 RFG

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 30 V 5.7A (Ta) 4.5V, 10V 48mOhm @ 5.3A, 10V 3V @ 250µA 18.09 nC @ 10 V ±20V 1047.98 pF @ 15 V - 1.6W (Ta) -55°C ~ 150°C (TJ) Surface Mount
TSM2314CX RFG

TSM2314CX RFG

MOSFET N-CHANNEL 20V 4.9A SOT23

Taiwan Semiconductor Corporation
2,745 -

RFQ

TSM2314CX RFG

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 20 V 4.9A (Tc) 1.8V, 4.5V 33mOhm @ 4.9A, 4.5V 1.2V @ 250µA 11 nC @ 4.5 V ±12V 900 pF @ 10 V - 1.25W (Ta) -55°C ~ 150°C (TJ) Surface Mount
TSM70N380CH C5G

TSM70N380CH C5G

MOSFET N-CH 700V 11A TO251

Taiwan Semiconductor Corporation
2,754 -

RFQ

TSM70N380CH C5G

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 700 V 11A (Tc) 10V 380mOhm @ 3.3A, 10V 4V @ 250µA 18.8 nC @ 10 V ±30V 981 pF @ 100 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
TSM60NB190CZ C0G

TSM60NB190CZ C0G

MOSFET N-CHANNEL 600V 18A TO220

Taiwan Semiconductor Corporation
3,921 -

RFQ

TSM60NB190CZ C0G

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 18A (Tc) 10V 190mOhm @ 6A, 10V 4V @ 250µA 31 nC @ 10 V ±30V 1273 pF @ 100 V - 33.8W (Tc) -55°C ~ 150°C (TJ) Through Hole
TSM60NB041PW C1G

TSM60NB041PW C1G

MOSFET N-CHANNEL 600V 78A TO247

Taiwan Semiconductor Corporation
2,489 -

RFQ

TSM60NB041PW C1G

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 78A (Tc) 10V 41mOhm @ 21.7A, 10V 4V @ 250µA 139 nC @ 10 V ±30V 6120 pF @ 100 V - 446W (Tc) -55°C ~ 150°C (TJ) Through Hole
TSM3401CX RFG

TSM3401CX RFG

MOSFET P-CHANNEL 30V 3A SOT23

Taiwan Semiconductor Corporation
24,000 -

RFQ

TSM3401CX RFG

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 30 V 3A (Ta) 4.5V, 10V 60mOhm @ 3A, 10V 3V @ 250µA 2.7 nC @ 10 V ±20V 551.57 pF @ 15 V - 1.25W (Ta) -55°C ~ 150°C (TJ) Surface Mount
TSM2311CX-01 RFG

TSM2311CX-01 RFG

MOSFET P-CH 20V 4A SOT23

Taiwan Semiconductor Corporation
3,736 -

RFQ

Tape & Reel (TR) - Obsolete P-Channel MOSFET (Metal Oxide) 20 V 4A (Ta) 2.5V, 4.5V 55mOhm @ 4A, 4.5V 1.4V @ 250µA 9 nC @ 4.5 V ±8V 640 pF @ 6 V - 900mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
TSM10N60CI C0

TSM10N60CI C0

MOSFET N-CH 600V 10A ITO220

Taiwan Semiconductor Corporation
3,724 -

RFQ

TSM10N60CI C0

Ficha técnica

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 10A (Tc) 10V 750mOhm @ 5A, 10V 4V @ 250µA 45.8 nC @ 10 V ±30V 1738 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
TSM10N60CI C0G

TSM10N60CI C0G

MOSFET N-CH 600V 10A ITO220

Taiwan Semiconductor Corporation
3,409 -

RFQ

TSM10N60CI C0G

Ficha técnica

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 10A (Tc) 10V 750mOhm @ 5A, 10V 4V @ 250µA 45.8 nC @ 10 V ±30V 1738 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
TSM10N60CZ C0

TSM10N60CZ C0

MOSFET N-CH 600V 10A TO220

Taiwan Semiconductor Corporation
2,041 -

RFQ

TSM10N60CZ C0

Ficha técnica

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 10A (Tc) 10V 750mOhm @ 5A, 10V 4V @ 250µA 45.8 nC @ 10 V ±30V 1738 pF @ 25 V - 166W (Tc) -55°C ~ 150°C (TJ) Through Hole
TSM10N60CZ C0G

TSM10N60CZ C0G

MOSFET N-CH 600V 10A TO220

Taiwan Semiconductor Corporation
3,068 -

RFQ

TSM10N60CZ C0G

Ficha técnica

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 10A (Tc) 10V 750mOhm @ 5A, 10V 4V @ 250µA 45.8 nC @ 10 V ±30V 1738 pF @ 25 V - 166W (Tc) -55°C ~ 150°C (TJ) Through Hole
TSM22P10CI C0G

TSM22P10CI C0G

MOSFET P-CH 100V 22A ITO220

Taiwan Semiconductor Corporation
3,217 -

RFQ

TSM22P10CI C0G

Ficha técnica

Bulk - Obsolete P-Channel MOSFET (Metal Oxide) 100 V 22A (Tc) 4.5V, 10V 140mOhm @ 20A, 10V 3V @ 250µA 42 nC @ 10 V ±25V 2250 pF @ 30 V - 48W (Tc) 150°C (TJ) Through Hole
TSM22P10CZ C0G

TSM22P10CZ C0G

MOSFET P-CH 100V 22A TO220

Taiwan Semiconductor Corporation
2,882 -

RFQ

TSM22P10CZ C0G

Ficha técnica

Bulk - Obsolete P-Channel MOSFET (Metal Oxide) 100 V 22A (Tc) 4.5V, 10V 140mOhm @ 20A, 10V 3V @ 250µA 42 nC @ 10 V ±25V 2250 pF @ 30 V - 125W (Tc) 150°C (TJ) Through Hole
TSM230N06CI C0G

TSM230N06CI C0G

MOSFET N-CH 60V 50A ITO220

Taiwan Semiconductor Corporation
2,759 -

RFQ

TSM230N06CI C0G

Ficha técnica

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 4.5V, 10V 23mOhm @ 20A, 10V 2.5V @ 250µA 28 nC @ 10 V ±20V 1680 pF @ 25 V - 42W (Tc) 150°C (TJ) Through Hole
TSM230N06CZ C0G

TSM230N06CZ C0G

MOSFET N-CH 60V 50A TO220

Taiwan Semiconductor Corporation
3,148 -

RFQ

TSM230N06CZ C0G

Ficha técnica

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 4.5V, 10V 23mOhm @ 20A, 10V 2.5V @ 250µA 28 nC @ 10 V ±20V 1680 pF @ 25 V - 104W (Tc) 150°C (TJ) Through Hole
TSM340N06CI C0G

TSM340N06CI C0G

MOSFET N-CH 60V 30A ITO220

Taiwan Semiconductor Corporation
3,462 -

RFQ

TSM340N06CI C0G

Ficha técnica

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 30A (Tc) 4.5V, 10V 34mOhm @ 15A, 10V 2.5V @ 250µA 16.6 nC @ 10 V ±20V 1180 pF @ 30 V - 27W (Tc) 150°C (TJ) Through Hole
TSM340N06CZ C0G

TSM340N06CZ C0G

MOSFET N-CH 60V 30A TO220

Taiwan Semiconductor Corporation
3,867 -

RFQ

TSM340N06CZ C0G

Ficha técnica

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 30A (Tc) 4.5V, 10V 34mOhm @ 15A, 10V 2.5V @ 250µA 16.6 nC @ 10 V ±20V 1180 pF @ 30 V - 66W (Tc) 150°C (TJ) Through Hole
TSM480P06CI C0G

TSM480P06CI C0G

MOSFET P-CH 60V 20A ITO220

Taiwan Semiconductor Corporation
2,951 -

RFQ

TSM480P06CI C0G

Ficha técnica

Bulk - Obsolete P-Channel MOSFET (Metal Oxide) 60 V 20A (Tc) 4.5V, 10V 48mOhm @ 8A, 10V 2.2V @ 250µA 22.4 nC @ 10 V ±20V 1250 pF @ 30 V - 27W (Tc) -50°C ~ 150°C (TJ) Through Hole
TSM480P06CZ C0G

TSM480P06CZ C0G

MOSFET P-CH 60V 20A TO220

Taiwan Semiconductor Corporation
3,152 -

RFQ

TSM480P06CZ C0G

Ficha técnica

Bulk - Obsolete P-Channel MOSFET (Metal Oxide) 60 V 20A (Tc) 4.5V, 10V 48mOhm @ 8A, 10V 2.2V @ 250µA 22.4 nC @ 10 V ±20V 1250 pF @ 30 V - 66W (Tc) -50°C ~ 150°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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