Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
TSM60NB099PW C1G

TSM60NB099PW C1G

MOSFET N-CHANNEL 600V 38A TO247

Taiwan Semiconductor Corporation
2,057 -

RFQ

TSM60NB099PW C1G

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 38A (Tc) 10V 99mOhm @ 11.7A, 10V 4V @ 250µA 62 nC @ 10 V ±30V 2587 pF @ 100 V - 329W (Tc) -55°C ~ 150°C (TJ) Through Hole
TSM80N400CF C0G

TSM80N400CF C0G

MOSFET N-CH 800V 12A ITO220S

Taiwan Semiconductor Corporation
3,861 -

RFQ

TSM80N400CF C0G

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 800 V 12A (Tc) 10V 400mOhm @ 2.7A, 10V 4V @ 250µA 51 nC @ 10 V ±30V 1848 pF @ 100 V - 69W (Tc) -55°C ~ 150°C (TJ) Through Hole
TSM340N06CH X0G

TSM340N06CH X0G

MOSFET N-CHANNEL 60V 30A TO251

Taiwan Semiconductor Corporation
965 -

RFQ

TSM340N06CH X0G

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 30A (Tc) 4.5V, 10V 34mOhm @ 15A, 10V 2.5V @ 250µA 16.6 nC @ 10 V ±20V 1180 pF @ 30 V - 66W (Tc) 150°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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