Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
TSM4N60ECH C5G

TSM4N60ECH C5G

MOSFET N-CHANNEL 600V 4A TO251

Taiwan Semiconductor Corporation
2,461 -

RFQ

TSM4N60ECH C5G

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 4A (Tc) 10V 2.5Ohm @ 2A, 10V 5V @ 250µA 12 nC @ 10 V ±30V 545 pF @ 25 V - 86.2W (Tc) 150°C (TJ) Through Hole
TSM4N70CH C5G

TSM4N70CH C5G

MOSFET N-CH 700V 3.5A TO251

Taiwan Semiconductor Corporation
3,671 -

RFQ

TSM4N70CH C5G

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 700 V 3.5A (Tc) 10V 3.3Ohm @ 2A, 10V 4V @ 250µA 14 nC @ 10 V ±30V 595 pF @ 25 V - 56W (Tc) -55°C ~ 150°C (TJ) Through Hole
TSM4N70CI C0G

TSM4N70CI C0G

MOSFET N-CH 700V 3.5A ITO220AB

Taiwan Semiconductor Corporation
2,973 -

RFQ

TSM4N70CI C0G

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 700 V 3.5A (Tc) 10V 3.3Ohm @ 2A, 10V 4V @ 250µA 14 nC @ 10 V ±30V 595 pF @ 25 V - 56W (Tc) -55°C ~ 150°C (TJ) Through Hole
TSM4N70CP ROG

TSM4N70CP ROG

MOSFET N-CH 700V 3.5A TO252

Taiwan Semiconductor Corporation
3,851 -

RFQ

TSM4N70CP ROG

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 700 V 3.5A (Tc) 10V 3.3Ohm @ 2A, 10V 4V @ 250µA 14 nC @ 10 V ±30V 595 pF @ 25 V - 56W (Tc) -55°C ~ 150°C (TJ) Surface Mount
TSM4N80CI C0G

TSM4N80CI C0G

MOSFET N-CH 800V 4A ITO220AB

Taiwan Semiconductor Corporation
2,338 -

RFQ

TSM4N80CI C0G

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 800 V 4A (Tc) 10V 3Ohm @ 1.2A, 10V 4V @ 250µA 20 nC @ 10 V ±30V 955 pF @ 25 V - 38.7W (Tc) -55°C ~ 150°C (TJ) Through Hole
TSM4N80CZ C0G

TSM4N80CZ C0G

MOSFET N-CHANNEL 800V 4A TO220

Taiwan Semiconductor Corporation
2,137 -

RFQ

TSM4N80CZ C0G

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 800 V 4A (Tc) 10V 3Ohm @ 1.2A, 10V 4V @ 250µA 20 nC @ 10 V ±30V 955 pF @ 25 V - 38.7W (Tc) -55°C ~ 150°C (TJ) Through Hole
TSM4N90CI C0G

TSM4N90CI C0G

MOSFET N-CH 900V 4A ITO220AB

Taiwan Semiconductor Corporation
3,672 -

RFQ

TSM4N90CI C0G

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 900 V 4A (Tc) 10V 4Ohm @ 2A, 10V 4V @ 250µA 25 nC @ 10 V ±30V 955 pF @ 25 V - 38.7W (Tc) -55°C ~ 150°C (TJ) Through Hole
TSM4NB60CZ C0G

TSM4NB60CZ C0G

MOSFET N-CHANNEL 600V 4A TO220

Taiwan Semiconductor Corporation
3,946 -

RFQ

TSM4NB60CZ C0G

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 4A (Tc) 10V 2.5Ohm @ 2A, 10V 4.5V @ 250µA 14.5 nC @ 10 V ±30V 500 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
TSM4NC60CI C0G

TSM4NC60CI C0G

MOSFET N-CH 600V 4A ITO220AB

Taiwan Semiconductor Corporation
2,716 -

RFQ

TSM4NC60CI C0G

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 4A (Tc) 10V 2.5Ohm @ 1.3A, 10V 4V @ 250µA 18 nC @ 10 V ±30V 654 pF @ 50 V - 40W (Tc) -55°C ~ 150°C (TJ) Through Hole
TSM480P06CH X0G

TSM480P06CH X0G

MOSFET P-CHANNEL 60V 20A TO251

Taiwan Semiconductor Corporation
1,446 -

RFQ

TSM480P06CH X0G

Ficha técnica

Tube - Active P-Channel MOSFET (Metal Oxide) 60 V 20A (Tc) 4.5V, 10V 48mOhm @ 8A, 10V 2.2V @ 250µA 22.4 nC @ 10 V ±20V 1250 pF @ 30 V - 66W (Tc) -50°C ~ 150°C (TJ) Through Hole
TSM500N03CP ROG

TSM500N03CP ROG

MOSFET N-CH 30V 12.5A TO252

Taiwan Semiconductor Corporation
3,741 -

RFQ

TSM500N03CP ROG

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 12.5A (Tc) 4.5V, 10V 50mOhm @ 8A, 10V 3V @ 250µA 7 nC @ 4.5 V ±20V 270 pF @ 25 V - 12.5W (Tc) 150°C (TJ) Surface Mount
TSM60N06CP ROG

TSM60N06CP ROG

MOSFET N-CHANNEL 60V 66A TO252

Taiwan Semiconductor Corporation
2,556 -

RFQ

TSM60N06CP ROG

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 66A (Tc) 10V 7.3mOhm @ 30A, 10V 4V @ 250µA 81 nC @ 10 V ±20V 4382 pF @ 30 V - 44.6W (Tc) -55°C ~ 150°C (TJ) Surface Mount
TSM60N750CH C5G

TSM60N750CH C5G

MOSFET N-CHANNEL 600V 6A TO251

Taiwan Semiconductor Corporation
3,558 -

RFQ

TSM60N750CH C5G

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 6A (Tc) 10V 750mOhm @ 3A, 10V 4V @ 250µA 10.8 nC @ 10 V ±30V 554 pF @ 100 V - 62.5W (Tc) -55°C ~ 150°C (TJ) Through Hole
TSM60N750CP ROG

TSM60N750CP ROG

MOSFET N-CHANNEL 600V 6A TO252

Taiwan Semiconductor Corporation
2,124 -

RFQ

TSM60N750CP ROG

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 6A (Tc) 10V 750mOhm @ 3A, 10V 4V @ 250µA 10.8 nC @ 10 V ±30V 554 pF @ 100 V - 62.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
TSM6N50CH C5G

TSM6N50CH C5G

MOSFET N-CH 500V 5.6A TO251

Taiwan Semiconductor Corporation
3,944 -

RFQ

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 500 V 5.6A (Ta) 10V 1.4Ohm @ 2.8A, 10V 4V @ 250µA 25 nC @ 10 V ±30V 900 pF @ 25 V - 90W (Tc) 150°C (TJ) Through Hole
TSM6N50CP ROG

TSM6N50CP ROG

MOSFET N-CH 500V 5.6A TO252

Taiwan Semiconductor Corporation
3,347 -

RFQ

Tape & Reel (TR),Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 500 V 5.6A (Ta) 10V 1.4Ohm @ 2.8A, 10V 4V @ 250µA 25 nC @ 10 V ±30V 900 pF @ 25 V - 90W (Tc) 150°C (TJ) Surface Mount
TSM6N60CH C5G

TSM6N60CH C5G

MOSFET N-CHANNEL 600V 6A TO251

Taiwan Semiconductor Corporation
2,904 -

RFQ

TSM6N60CH C5G

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 6A (Tc) 10V 1.25Ohm @ 3A, 10V 4V @ 250µA 20.7 nC @ 10 V ±30V 1248 pF @ 25 V - 89W (Tc) 150°C (TJ) Through Hole
TSM6N60CP ROG

TSM6N60CP ROG

MOSFET N-CHANNEL 600V 6A TO252

Taiwan Semiconductor Corporation
2,480 -

RFQ

TSM6N60CP ROG

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 6A (Tc) 10V 1.25Ohm @ 3A, 10V 4V @ 250µA 20.7 nC @ 10 V ±30V 1248 pF @ 25 V - 89W (Tc) 150°C (TJ) Surface Mount
TSM6NB60CI C0G

TSM6NB60CI C0G

MOSFET N-CH 600V 6A ITO220AB

Taiwan Semiconductor Corporation
3,689 -

RFQ

TSM6NB60CI C0G

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 6A (Tc) 10V 1.6Ohm @ 3A, 10V 4.5V @ 250µA 18.3 nC @ 10 V ±30V 872 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) Through Hole
TSM6NB60CZ C0G

TSM6NB60CZ C0G

MOSFET N-CHANNEL 600V 6A TO220

Taiwan Semiconductor Corporation
3,005 -

RFQ

TSM6NB60CZ C0G

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 6A (Tc) 10V 1.6Ohm @ 3A, 10V 4.5V @ 250µA 18.3 nC @ 10 V ±30V 872 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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