Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
TSM026NA03CR RLG

TSM026NA03CR RLG

MOSFET N-CH 30V 168A 8PDFN

Taiwan Semiconductor Corporation
3,093 -

RFQ

TSM026NA03CR RLG

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 168A (Tc) 4.5V, 10V 2.6mOhm @ 24A, 10V 2.5V @ 250µA 41 nC @ 10 V ±20V 2540 pF @ 15 V - 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
TSM052N06PQ56 RLG

TSM052N06PQ56 RLG

MOSFET N-CH 60V 100A 8PDFN

Taiwan Semiconductor Corporation
3,714 -

RFQ

TSM052N06PQ56 RLG

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 100A (Tc) 10V 5.2mOhm @ 20A, 10V 4V @ 250µA 50 nC @ 10 V ±25V 3686 pF @ 30 V - 83W (Tc) -55°C ~ 150°C (TJ) Surface Mount
TSM061NA03CR RLG

TSM061NA03CR RLG

MOSFET N-CH 30V 88A 8PDFN

Taiwan Semiconductor Corporation
3,289 -

RFQ

TSM061NA03CR RLG

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 88A (Tc) 4.5V, 10V 6.1mOhm @ 16A, 10V 2.5V @ 250µA 19 nC @ 10 V ±20V 1133 pF @ 15 V - 78W (Tc) -55°C ~ 150°C (TJ) Surface Mount
TSM061NA03CV RGG

TSM061NA03CV RGG

MOSFET N-CH 30V 66A 8PDFN

Taiwan Semiconductor Corporation
3,305 -

RFQ

TSM061NA03CV RGG

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 66A (Tc) 4.5V, 10V 6.1mOhm @ 16A, 10V 2.5V @ 250µA 19.3 nC @ 10 V ±20V 1136 pF @ 15 V - 44.6W (Tc) -55°C ~ 150°C (TJ) Surface Mount
TSM088NA03CR RLG

TSM088NA03CR RLG

MOSFET N-CH 30V 61A 8PDFN

Taiwan Semiconductor Corporation
2,655 -

RFQ

TSM088NA03CR RLG

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 61A (Tc) 4.5V, 10V 8.8mOhm @ 13A, 10V 2.5V @ 250µA 12.6 nC @ 10 V ±20V 750 pF @ 15 V - 56W (Tc) -55°C ~ 150°C (TJ) Surface Mount
TSM10N06CP ROG

TSM10N06CP ROG

MOSFET N-CHANNEL 60V 10A TO252

Taiwan Semiconductor Corporation
3,362 -

RFQ

TSM10N06CP ROG

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 10A (Ta) 4V, 10V 65mOhm @ 10A, 10V 3V @ 250µA 10.5 nC @ 4.5 V ±20V 1100 pF @ 30 V - 45W (Tc) -55°C ~ 150°C (TJ) Surface Mount
TSM10N80CI C0G

TSM10N80CI C0G

MOSFET N-CH 800V 9.5A ITO220AB

Taiwan Semiconductor Corporation
2,846 -

RFQ

TSM10N80CI C0G

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 800 V 9.5A (Tc) 10V 1.05Ohm @ 4.75A, 10V 4V @ 250µA 53 nC @ 10 V ±30V 2336 pF @ 25 V - 48W (Tc) -55°C ~ 150°C (TJ) Through Hole
TSM10N80CZ C0G

TSM10N80CZ C0G

MOSFET N-CH 800V 9.5A TO220

Taiwan Semiconductor Corporation
2,143 -

RFQ

TSM10N80CZ C0G

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 800 V 9.5A (Tc) 10V 1.05Ohm @ 4.75A, 10V 4V @ 250µA 53 nC @ 10 V ±30V 2336 pF @ 25 V - 290W (Tc) -55°C ~ 150°C (TJ) Through Hole
TSM900N06CH X0G

TSM900N06CH X0G

MOSFET N-CHANNEL 60V 11A TO251

Taiwan Semiconductor Corporation
7,292 -

RFQ

TSM900N06CH X0G

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 11A (Tc) 4.5V, 10V 90mOhm @ 6A, 10V 2.5V @ 250µA 9.3 nC @ 10 V ±20V 500 pF @ 15 V - 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
TSM10NB60CI C0G

TSM10NB60CI C0G

MOSFET N-CH 600V 10A ITO220AB

Taiwan Semiconductor Corporation
2,179 -

RFQ

TSM10NB60CI C0G

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 10A (Tc) 10V 750mOhm @ 5A, 10V 4V @ 250µA 39 nC @ 10 V ±30V 1820 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
TSM120N10PQ56 RLG

TSM120N10PQ56 RLG

MOSFET N-CH 100V 58A 8PDFN

Taiwan Semiconductor Corporation
2,464 -

RFQ

Tape & Reel (TR),Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 100 V 58A (Tc) 10V 12mOhm @ 30A, 10V 4V @ 250µA 145 nC @ 10 V ±20V 3902 pF @ 30 V - 36W (Tc) -55°C ~ 150°C (TJ) Surface Mount
TSM120NA03CR RLG

TSM120NA03CR RLG

MOSFET N-CH 30V 39A 8PDFN

Taiwan Semiconductor Corporation
3,784 -

RFQ

TSM120NA03CR RLG

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 39A (Tc) 4.5V, 10V 11.7mOhm @ 11A, 10V 2.5V @ 250µA 9.2 nC @ 10 V ±20V 562 pF @ 15 V - 33W (Tc) -55°C ~ 150°C (TJ) Surface Mount
TSM13N50ACI C0G

TSM13N50ACI C0G

MOSFET N-CH 500V 13A ITO220AB

Taiwan Semiconductor Corporation
3,526 -

RFQ

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 500 V 13A (Tc) 10V 480mOhm @ 6.5A, 10V 4V @ 250µA 31 nC @ 10 V ±30V 1965 pF @ 25 V - 52W (Tc) -55°C ~ 150°C (TJ) Through Hole
TSM13N50ACZ C0G

TSM13N50ACZ C0G

MOSFET N-CHANNEL 500V 13A TO220

Taiwan Semiconductor Corporation
2,279 -

RFQ

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 500 V 13A (Tc) 10V 480mOhm @ 6.5A, 10V 4V @ 250µA 31 nC @ 10 V ±30V 1965 pF @ 25 V - 52W (Tc) -55°C ~ 150°C (TJ) Through Hole
TSM15N50CI C0G

TSM15N50CI C0G

MOSFET N-CH 500V 14A ITO220AB

Taiwan Semiconductor Corporation
2,815 -

RFQ

TSM15N50CI C0G

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 500 V 14A (Tc) 10V 440mOhm @ 7A, 10V 4V @ 250µA 39 nC @ 10 V ±30V 2263 pF @ 25 V - - 150°C (TJ) Through Hole
TSM15N50CZ C0G

TSM15N50CZ C0G

MOSFET N-CHANNEL 500V 14A TO220

Taiwan Semiconductor Corporation
3,240 -

RFQ

TSM15N50CZ C0G

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 500 V 14A (Tc) 10V 440mOhm @ 7A, 10V 4V @ 250µA 39 nC @ 10 V ±30V 2263 pF @ 25 V - - 150°C (TJ) Through Hole
TSM1N45CT A3G

TSM1N45CT A3G

MOSFET N-CH 450V 500MA TO92

Taiwan Semiconductor Corporation
3,756 -

RFQ

TSM1N45CT A3G

Ficha técnica

Cut Tape (CT),Tape & Box (TB) - Obsolete N-Channel MOSFET (Metal Oxide) 450 V 500mA (Tc) 10V 4.25Ohm @ 250mA, 10V 4.25V @ 250µA 6.5 nC @ 10 V ±30V 235 pF @ 25 V - 2W (Tc) -55°C ~ 150°C (TJ) Through Hole
TSM1N45CT B0G

TSM1N45CT B0G

MOSFET N-CH 450V 500MA TO92

Taiwan Semiconductor Corporation
3,060 -

RFQ

TSM1N45CT B0G

Ficha técnica

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 450 V 500mA (Tc) 10V 4.25Ohm @ 250mA, 10V 4.25V @ 250µA 6.5 nC @ 10 V ±30V 235 pF @ 25 V - 2W (Tc) -55°C ~ 150°C (TJ) Through Hole
TSM1N45CW RPG

TSM1N45CW RPG

MOSFET N-CH 450V 500MA SOT223

Taiwan Semiconductor Corporation
2,030 -

RFQ

TSM1N45CW RPG

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 450 V 500mA (Tc) 10V 4.25Ohm @ 250mA, 10V 4.25V @ 250µA 6.5 nC @ 10 V ±30V 235 pF @ 25 V - 2W (Tc) -55°C ~ 150°C (TJ) Surface Mount
TSM1N45DCS RLG

TSM1N45DCS RLG

MOSFET N-CH 450V 500MA 8SOP

Taiwan Semiconductor Corporation
2,973 -

RFQ

TSM1N45DCS RLG

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 450 V 500mA (Tc) 10V 4.25Ohm @ 250mA, 10V 4.9V @ 250mA 6.5 nC @ 10 V ±50V 185 pF @ 25 V - 900mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
Total 343 Record«Prev123456789...18Next»
1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Inicio

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Producto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Teléfono

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Usuario