Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
TSM1NB60CW RPG

TSM1NB60CW RPG

MOSFET N-CHANNEL 600V 1A SOT223

Taiwan Semiconductor Corporation
3,357 -

RFQ

TSM1NB60CW RPG

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 600 V 1A (Tc) 10V 10Ohm @ 500mA, 10V 4.5V @ 250µA 6.1 nC @ 10 V ±30V 138 pF @ 25 V - 39W (Tc) -55°C ~ 150°C (TJ) Surface Mount
TSM060N03ECP ROG

TSM060N03ECP ROG

MOSFET N-CHANNEL 30V 70A TO252

Taiwan Semiconductor Corporation
2,921 -

RFQ

TSM060N03ECP ROG

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 30 V 70A (Tc) 4.5V, 10V 6mOhm @ 20A, 10V 2.5V @ 250µA 11.1 nC @ 4.5 V ±20V 1210 pF @ 25 V - 54W (Tc) 150°C (TJ) Surface Mount
TSM80N1R2CP ROG

TSM80N1R2CP ROG

MOSFET N-CH 800V 5.5A TO252

Taiwan Semiconductor Corporation
3,635 -

RFQ

TSM80N1R2CP ROG

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 800 V 5.5A (Tc) 10V 1.2Ohm @ 2.75A, 10V 4V @ 250µA 19.4 nC @ 10 V ±30V 685 pF @ 100 V - 110W (Tc) -55°C ~ 150°C (TJ) Surface Mount
TSM60NB099CZ C0G

TSM60NB099CZ C0G

MOSFET N-CHANNEL 600V 38A TO220

Taiwan Semiconductor Corporation
2,733 -

RFQ

TSM60NB099CZ C0G

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 38A (Tc) 10V 99mOhm @ 11.3A, 10V 4V @ 250µA 62 nC @ 10 V ±30V 2587 pF @ 100 V - 298W (Tc) -55°C ~ 150°C (TJ) Through Hole
TSM60N380CP ROG

TSM60N380CP ROG

MOSFET N-CHANNEL 600V 11A TO252

Taiwan Semiconductor Corporation
2,885 -

RFQ

TSM60N380CP ROG

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 11A (Tc) 10V 380mOhm @ 5.5A, 10V 4V @ 250µA 20.5 nC @ 10 V ±30V 1040 pF @ 100 V - 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
TSM60NB600CP ROG

TSM60NB600CP ROG

MOSFET N-CHANNEL 600V 7A TO252

Taiwan Semiconductor Corporation
2,871 -

RFQ

TSM60NB600CP ROG

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 600 V 7A (Tc) 10V 600mOhm @ 2.1A, 10V 4V @ 250µA 13 nC @ 10 V ±30V 516 pF @ 100 V - 63W (Tc) -55°C ~ 150°C (TJ) Surface Mount
TSM60NB1R4CH C5G

TSM60NB1R4CH C5G

MOSFET N-CHANNEL 600V 3A TO251

Taiwan Semiconductor Corporation
2,050 -

RFQ

TSM60NB1R4CH C5G

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 3A (Tc) 10V 1.4Ohm @ 900mA, 10V 4V @ 250µA 7.12 nC @ 10 V ±30V 257.3 pF @ 100 V - 28.4W (Tc) -55°C ~ 150°C (TJ) Through Hole
TSM70N380CI C0G

TSM70N380CI C0G

MOSFET N-CH 700V 11A ITO220AB

Taiwan Semiconductor Corporation
2,024 -

RFQ

TSM70N380CI C0G

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 700 V 11A (Tc) 10V 380mOhm @ 3.3A, 10V 4V @ 250µA 18.8 nC @ 10 V ±30V 981 pF @ 100 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
TSM60NB150CF C0G

TSM60NB150CF C0G

MOSFET N-CH 600V 24A ITO220S

Taiwan Semiconductor Corporation
3,331 -

RFQ

TSM60NB150CF C0G

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 24A (Tc) 10V 150mOhm @ 4.3A, 10V 4V @ 250µA 43 nC @ 10 V ±30V 1765 pF @ 100 V - 62.5W (Tc) -55°C ~ 150°C (TJ) Through Hole
TSM2N7002KCU

TSM2N7002KCU

60V, 0.24A, SINGLE N-CHANNEL POW

Taiwan Semiconductor Corporation
3,331 -

RFQ

TSM2N7002KCU

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 60 V 240mA (Ta) 4.5V, 10V 2.5Ohm @ 240mA, 10V 2.5V @ 250µA 0.91 nC @ 4.5 V ±20V 30 pF @ 30 V - 298mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
TQM300NB06CR RLG

TQM300NB06CR RLG

MOSFET N-CH 60V 6A/27A 8PDFNU

Taiwan Semiconductor Corporation
3,053 -

RFQ

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 60 V 6A (Ta), 27A (Tc) 7V, 10V 30mOhm @ 6A, 10V 3.8V @ 250µA 20 nC @ 10 V ±20V 1009 pF @ 30 V - 3.1W (Ta), 56W (Tc) -55°C ~ 175°C (TJ) Surface Mount, Wettable Flank
TSM056NH04CV RGG

TSM056NH04CV RGG

40V, 54A, SINGLE N-CHANNEL POWER

Taiwan Semiconductor Corporation
3,247 -

RFQ

TSM056NH04CV RGG

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) PerFET™ Active N-Channel MOSFET (Metal Oxide) 40 V 16A (Ta), 54A (Tc) 7V, 10V 5.6mOhm @ 27A, 10V 3.6V @ 250µA 29 nC @ 10 V ±20V 1828 pF @ 25 V - 34W (Tc) -55°C ~ 150°C (TJ) Surface Mount
TSM070NH04CV RGG

TSM070NH04CV RGG

40V, 54A, SINGLE N-CHANNEL POWER

Taiwan Semiconductor Corporation
2,784 -

RFQ

TSM070NH04CV RGG

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) PerFET™ Active N-Channel MOSFET (Metal Oxide) 40 V 14A (Ta), 54A (Tc) 7V, 10V 7mOhm @ 27A, 10V 3.6V @ 250µA 21 nC @ 10 V ±20V 1233 pF @ 25 V - 36W (Tc) -55°C ~ 150°C (TJ) Surface Mount
TSM032NH04CR RLG

TSM032NH04CR RLG

40V, 81A, SINGLE N-CHANNEL POWER

Taiwan Semiconductor Corporation
2,825 -

RFQ

TSM032NH04CR RLG

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) PerFET™ Active N-Channel MOSFET (Metal Oxide) 40 V 25A (Ta), 81A (Tc) 7V, 10V 3.2mOhm @ 40A, 10V 3.6V @ 250µA 45 nC @ 10 V ±20V 2896 pF @ 25 V - 115W (Tc) -55°C ~ 175°C (TJ) Surface Mount
TSM2323CX RFG

TSM2323CX RFG

MOSFET P-CHANNEL 20V 4.7A SOT23

Taiwan Semiconductor Corporation
102,885 -

RFQ

TSM2323CX RFG

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 20 V 4.7A (Ta) 1.8V, 4.5V 39mOhm @ 4.7A, 4.5V 1V @ 250µA 12.5 nC @ 4.5 V ±8V 1020 pF @ 10 V - 1.25W (Ta) -55°C ~ 150°C (TJ) Surface Mount
TSM2312CX RFG

TSM2312CX RFG

MOSFET N-CHANNEL 20V 4.9A SOT23

Taiwan Semiconductor Corporation
37,367 -

RFQ

TSM2312CX RFG

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 20 V 4.9A (Tc) 1.8V, 4.5V 33mOhm @ 4.9A, 4.5V 1V @ 250µA 11.2 nC @ 4.5 V ±8V 500 pF @ 10 V - 750mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
TSM850N06CX RFG

TSM850N06CX RFG

MOSFET N-CHANNEL 60V 3A SOT23

Taiwan Semiconductor Corporation
44,907 -

RFQ

TSM850N06CX RFG

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 60 V 3A (Tc) 4.5V, 10V 85mOhm @ 2.3A, 10V 2.5V @ 250µA 9.5 nC @ 10 V ±20V 529 pF @ 30 V - 1.7W (Tc) -55°C ~ 150°C (TJ) Surface Mount
TSM210N02CX RFG

TSM210N02CX RFG

MOSFET N-CHANNEL 20V 6.7A SOT23

Taiwan Semiconductor Corporation
419 -

RFQ

TSM210N02CX RFG

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 20 V 6.7A (Tc) 1.8V, 4.5V 25mOhm @ 4A, 4.5V 800mV @ 250µA 4 nC @ 4.5 V ±10V 600 pF @ 10 V - 1.56W (Tc) 150°C (TJ) Surface Mount
TSM250N02CX RFG

TSM250N02CX RFG

MOSFET N-CHANNEL 20V 5.8A SOT23

Taiwan Semiconductor Corporation
374,755 -

RFQ

TSM250N02CX RFG

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 20 V 5.8A (Tc) 1.8V, 4.5V 25mOhm @ 4A, 4.5V 800mV @ 250µA 7.7 nC @ 4.5 V ±10V 535 pF @ 10 V - 1.56W (Tc) 150°C (TJ) Surface Mount
TSM2309CX RFG

TSM2309CX RFG

MOSFET P-CHANNEL 60V 3.1A SOT23

Taiwan Semiconductor Corporation
151,792 -

RFQ

TSM2309CX RFG

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 60 V 3.1A (Tc) 4.5V, 10V 190mOhm @ 3A, 10V 2.5V @ 250µA 8.2 nC @ 10 V ±20V 425 pF @ 30 V - 1.56W (Tc) 150°C (TJ) Surface Mount
Total 343 Record«Prev123456...18Next»
1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Inicio

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Producto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Teléfono

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Usuario