Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRF223

IRF223

N-CHANNEL POWER MOSFET

Harris Corporation
3,136 -

RFQ

IRF223

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 150 V 4A (Tc) 10V 1.2Ohm @ 2.5A, 10V 4V @ 250µA 15 nC @ 10 V ±20V 450 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) Through Hole
2N6759

2N6759

N-CHANNEL POWER MOSFET

Harris Corporation
3,255 -

RFQ

2N6759

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 350 V 4.5A (Tc) 10V 1.5Ohm @ 3A, 10V 4V @ 1mA - ±20V 800 pF @ 25 V - 75W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF532

IRF532

N-CHANNEL POWER MOSFET

Harris Corporation
2,722 -

RFQ

IRF532

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 100 V 12A (Tc) 10V 230mOhm @ 8.3A, 10V 4V @ 250µA 26 nC @ 10 V ±20V 600 pF @ 25 V - 79W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF433

IRF433

N-CHANNEL POWER MOSFET

Harris Corporation
2,063 -

RFQ

IRF433

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 450 V 4A - - - - - - - 75W - Through Hole
HRF3205

HRF3205

MOSFET N-CH 55V 100A TO220-3

Harris Corporation
3,650 -

RFQ

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 55 V 100A (Tc) 10V 8mOhm @ 59A, 10V 4V @ 250µA 170 nC @ 10 V ±20V 4000 pF @ 25 V - 175W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFP151

IRFP151

N-CHANNEL POWER MOSFET

Harris Corporation
2,158 -

RFQ

IRFP151

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 60 V 40A (Tc) 10V 55mOhm @ 22A, 10V 4V @ 250µA 110 nC @ 10 V ±20V 2000 pF @ 25 V - 180W (Tc) -55°C ~ 150°C (TJ) Through Hole
RFM25N06

RFM25N06

N-CHANNEL POWER MOSFET

Harris Corporation
3,749 -

RFQ

RFM25N06

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 60 V 25A (Tc) 10V 70mOhm @ 12.5A, 10V 4V @ 1mA - ±20V 1700 pF @ 25 V - 100W (Tc) -55°C ~ 150°C (TJ) Through Hole
RFM10N15L

RFM10N15L

N-CHANNEL POWER MOSFET

Harris Corporation
3,401 -

RFQ

RFM10N15L

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 150 V 10A (Tc) 5V 300mOhm @ 5A, 5V - - ±10V 1200 pF @ 25 V - 75W (Tc) -55°C ~ 150°C (TJ) Through Hole
RFH75N05

RFH75N05

75A, 50V, 0.008OHM, N-CHANNEL

Harris Corporation
3,605 -

RFQ

RFH75N05

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 50 V - - - - - - - - - -
IRFD321

IRFD321

N-CHANNEL POWER MOSFET

Harris Corporation
3,979 -

RFQ

IRFD321

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 350 V 500mA (Tc) 10V 1.8Ohm @ 250mA, 10V 4V @ 250µA 15 nC @ 10 V ±20V 455 pF @ 25 V - 1W (Tc) -55°C ~ 150°C (TJ) Through Hole
RFM10N45

RFM10N45

N-CHANNEL POWER MOSFET

Harris Corporation
3,678 -

RFQ

RFM10N45

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 450 V 10A (Tc) 10V 600mOhm @ 5A, 10V 4V @ 1mA - ±20V 3000 pF @ 25 V - 150W (Tc) -55°C ~ 150°C (TJ) Through Hole
RFH45N05

RFH45N05

N-CHANNEL POWER MOSFET

Harris Corporation
3,323 -

RFQ

RFH45N05

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 50 V 45A (Tc) 10V 40mOhm @ 22.5A, 10V 4V @ 1mA - ±20V 3000 pF @ 25 V - 150W (Tc) -55°C ~ 150°C (TJ) Through Hole
RFH75N05E

RFH75N05E

N-CHANNEL POWER MOSFET

Harris Corporation
2,730 -

RFQ

RFH75N05E

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 50 V 75A (Tc) 10V 8mOhm @ 75A, 10V 4V @ 250µA 400 nC @ 20 V ±20V - - 240W (Tc) -55°C ~ 175°C (TJ) Through Hole
JANSR2N7292

JANSR2N7292

25A, 100V, 0.070 OHM, RAD HARD

Harris Corporation
2,832 -

RFQ

JANSR2N7292

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 100 V 25A (Tc) 10V 70mOhm @ 20A, 10V 5V @ 1mA 552 nC @ 20 V ±20V - - 125W (Tc) -55°C ~ 150°C (TJ)
IRFU9110

IRFU9110

3.1A 100V 1.200 OHM P-CHANNEL

Harris Corporation
2,564 -

RFQ

IRFU9110

Ficha técnica

Bulk - Active P-Channel MOSFET (Metal Oxide) 100 V 3.1A (Tc) 10V 1.2Ohm @ 1.9A, 10V 4V @ 250µA 8.7 nC @ 10 V ±20V 200 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF520

IRF520

MOSFET N-CH 100V 9.2A TO220AB

Harris Corporation
1,331 -

RFQ

IRF520

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 100 V 9.2A (Tc) - 270mOhm @ 5.6A, 10V 4V @ 250µA 15 nC @ 10 V ±20V 350 pF @ 25 V - 60W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFD9110

IRFD9110

0.7A 100V 1.200 OHM P-CHANNEL

Harris Corporation
15,652 -

RFQ

IRFD9110

Ficha técnica

Bulk - Active P-Channel MOSFET (Metal Oxide) 100 V 700mA (Ta) 10V 1.2Ohm @ 420mA, 10V 4V @ 250µA 8.7 nC @ 10 V ±20V 200 pF @ 25 V - 1.3W (Ta) -55°C ~ 175°C (TJ) Through Hole
RFD20N03

RFD20N03

N-CHANNEL POWER MOSFET

Harris Corporation
10,550 -

RFQ

RFD20N03

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 30 V 20A (Tc) 10V 25mOhm @ 20A, 10V 4V @ 250µA 75 nC @ 20 V ±20V 1150 pF @ 25 V - 90W (Tc) -55°C ~ 175°C (TJ) Through Hole
BUZ73A

BUZ73A

MOSFET N-CH 200V 5.5A TO220-3

Harris Corporation
25,614 -

RFQ

BUZ73A

Ficha técnica

Tube SIPMOS® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 5.5A (Tc) 10V 600mOhm @ 4.5A, 10V 4V @ 1mA - ±20V 530 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF621

IRF621

N-CHANNEL POWER MOSFET

Harris Corporation
14,230 -

RFQ

IRF621

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 150 V 5A (Tc) 10V 800mOhm @ 2.5A, 10V 4V @ 250µA 15 nC @ 10 V ±20V 450 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) Through Hole
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1500+ Promedio diario de RFQ
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1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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