Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
BUZ21

BUZ21

MOSFET N-CH 100V 21A TO220AB

Harris Corporation
44,223 -

RFQ

BUZ21

Ficha técnica

Tube SIPMOS® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 21A (Tc) - 85mOhm @ 13A, 10V 4V @ 1mA - - 1300 pF @ 25 V - - - Through Hole
IRFP150

IRFP150

MOSFET N-CH 100V 41A TO247-3

Harris Corporation
14,389 -

RFQ

IRFP150

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 100 V 41A (Tc) 10V 55mOhm @ 25A, 10V 4V @ 250µA 140 nC @ 10 V ±20V 2800 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) Through Hole
2N6792

2N6792

N-CHANNEL POWER MOSFET

Harris Corporation
10,903 -

RFQ

2N6792

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 400 V 2A (Tc) 10V 1.8Ohm @ 1.25A, 10V 4V @ 1mA - ±20V 600 pF @ 25 V - 20W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF331

IRF331

N-CHANNEL POWER MOSFET

Harris Corporation
5,599 -

RFQ

IRF331

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 350 V 5.5A (Tc) 10V 1Ohm @ 3A, 10V 4V @ 250µA 35 nC @ 10 V ±20V 700 pF @ 25 V - 75W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF641

IRF641

N-CHANNEL POWER MOSFET

Harris Corporation
14,411 -

RFQ

IRF641

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 150 V 18A (Tc) 10V 180mOhm @ 10A, 10V 4V @ 250µA 64 nC @ 10 V ±20V 1275 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
RFW2N06RLE

RFW2N06RLE

N-CHANNEL POWER MOSFET

Harris Corporation
915 -

RFQ

RFW2N06RLE

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 60 V 2A (Tc) 5V 200mOhm @ 2A, 5V 2V @ 250µA 30 nC @ 10 V +10V, -5V 535 pF @ 25 V - 1.09W (Tc) -55°C ~ 150°C (TJ) Through Hole
RFL1N15L

RFL1N15L

N-CHANNEL POWER MOSFET

Harris Corporation
1,621 -

RFQ

RFL1N15L

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 150 V 1A (Tc) 5V 1.9Ohm @ 1A, 5V 2V @ 250µA - ±10V 200 pF @ 25 V - 8.33W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF644

IRF644

14A, 250V, 0.28 OHM, N-CHANNEL

Harris Corporation
24,596 -

RFQ

IRF644

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 250 V 14A (Tc) 10V 280mOhm @ 8.4A, 10V 4V @ 250µA 68 nC @ 10 V ±20V 1300 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF120

IRF120

N-CHANNEL POWER MOSFET

Harris Corporation
498 -

RFQ

IRF120

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 100 V 8A (Tc) 10V 300mOhm @ 4A, 10V 4V @ 250µA 15 nC @ 10 V ±20V 600 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF351

IRF351

N-CHANNEL POWER MOSFET

Harris Corporation
1,804 -

RFQ

IRF351

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 350 V 15A (Tc) 10V 300mOhm @ 8A, 10V 4V @ 250µA 120 nC @ 10 V ±20V 2000 pF @ 25 V - 150W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFPG42

IRFPG42

N-CHANNEL POWER MOSFET

Harris Corporation
2,551 -

RFQ

IRFPG42

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 1000 V 3.9A (Tc) 10V 4.2Ohm @ 2.5A, 10V 4V @ 250µA 120 nC @ 10 V ±20V - - 150W (Tc) -55°C ~ 150°C (TJ) Through Hole
RF1S9540

RF1S9540

P-CHANNEL POWER MOSFETS

Harris Corporation
7,199 -

RFQ

RF1S9540

Ficha técnica

Bulk - Active P-Channel MOSFET (Metal Oxide) 100 V 19A (Tc) 10V 200mOhm @ 10A, 10V 4V @ 250µA 90 nC @ 10 V ±20V 1100 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
RFP10P15

RFP10P15

P-CHANNEL POWER MOSFET

Harris Corporation
75,487 -

RFQ

RFP10P15

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 150 V 10A (Tc) 10V 500mOhm @ 5A, 10V 4V @ 1mA - ±20V 1700 pF @ 25 V - 75W (Tc) -55°C ~ 150°C (TJ) Through Hole
RFB18N10CS

RFB18N10CS

MOSFET N-CH 100V 18A TO220AB-5

Harris Corporation
1,768 -

RFQ

RFB18N10CS

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 100 V 18A (Tc) - 100mOhm @ 9A, 10V 4V @ 250µA 20 nC @ 10 V ±20V - Current Sensing 79W (Tc) -55°C ~ 175°C (TJ) Through Hole
RFP25N06L

RFP25N06L

N-CHANNEL, MOSFET

Harris Corporation
1,389 -

RFQ

RFP25N06L

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 60 V 25A (Tc) 5V 85mOhm @ 12.5A, 5V 2V @ 1mA - ±10V 2000 pF @ 25 V - 75W (Tc) -55°C ~ 150°C (TJ) Through Hole
RF1S640SM

RF1S640SM

MOSFET N-CH 200V 18A TO263AB

Harris Corporation
805 -

RFQ

RF1S640SM

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 200 V 18A (Tc) - 180mOhm @ 10A, 10V 4V @ 250µA 64 nC @ 10 V ±20V 1275 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
RFG30P05

RFG30P05

P-CHANNEL POWER MOSFET

Harris Corporation
1,617 -

RFQ

RFG30P05

Ficha técnica

Bulk - Active P-Channel MOSFET (Metal Oxide) 50 V 30A (Tc) 10V 65mOhm @ 30A, 10V 4V @ 250µA 170 nC @ 20 V ±20V 3200 pF @ 25 V - 120W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFP440

IRFP440

MOSFET N-CH 500V 8.8A TO247-3

Harris Corporation
1,892 -

RFQ

IRFP440

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 500 V 8.8A (Tc) 10V 850mOhm @ 5.3A, 10V 4V @ 250µA 63 nC @ 10 V ±20V 1300 pF @ 25 V - 150W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF244

IRF244

N-CHANNEL POWER MOSFET

Harris Corporation
37,562 -

RFQ

IRF244

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 250 V 8.8A (Tc) 10V 280mOhm @ 8A, 10V 4V @ 250µA 59 nC @ 10 V ±20V 1300 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFP9240

IRFP9240

MOSFET P-CH 200V 12A TO247-3

Harris Corporation
5,232 -

RFQ

IRFP9240

Ficha técnica

Tube - Obsolete P-Channel MOSFET (Metal Oxide) 200 V 12A (Tc) 10V 500mOhm @ 7.2A, 10V 4V @ 250µA 44 nC @ 10 V ±20V 1200 pF @ 25 V - 150W (Tc) -55°C ~ 150°C (TJ) Through Hole
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1500+ Promedio diario de RFQ
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1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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