Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRFD9123

IRFD9123

MOSFET P-CH 100V 1A 4DIP

Harris Corporation
18,527 -

RFQ

IRFD9123

Ficha técnica

Tube - Obsolete P-Channel MOSFET (Metal Oxide) 100 V 1A (Ta) - 600mOhm @ 600mA, 10V 4V @ 250µA 18 nC @ 10 V - 390 pF @ 25 V - - - Through Hole
HUF76129P3

HUF76129P3

N-CHANNEL POWER MOSFET

Harris Corporation
24,775 -

RFQ

HUF76129P3

Ficha técnica

Bulk UltraFET™ Active N-Channel MOSFET (Metal Oxide) 30 V 56A (Tc) 4.5V, 10V 16Ohm @ 56A, 10V 3V @ 250µA 45 nC @ 10 V ±20V 1350 pF @ 25 V - 105W (Tc) -40°C ~ 150°C (TJ) Through Hole
IRFD123

IRFD123

MOSFET N-CH 100V 1.3A 4DIP

Harris Corporation
40,377 -

RFQ

IRFD123

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 100 V 1.3A (Ta) - 270mOhm @ 780mA, 10V 4V @ 250µA 16 nC @ 10 V - 360 pF @ 25 V - - - Through Hole
IRFU220

IRFU220

4.6A 200V 0.800 OHM N-CHANNEL

Harris Corporation
13,114 -

RFQ

IRFU220

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 200 V 4.8A (Tc) - 800mOhm @ 2.9A, 10V 4V @ 250µA 14 nC @ 10 V - 260 pF @ 25 V - - - Through Hole
RFP8N18L

RFP8N18L

N-CHANNEL POWER MOSFET

Harris Corporation
3,462 -

RFQ

RFP8N18L

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 180 V 8A (Tc) 5V 500mOhm @ 4A, 5V 2V @ 1mA - ±10V 900 pF @ 25 V - 60W (Tc) -55°C ~ 150°C (TJ) Through Hole
RFP10N15L

RFP10N15L

N-CHANNEL POWER MOSFET

Harris Corporation
36,313 -

RFQ

RFP10N15L

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 150 V 10A (Tc) 5V 300mOhm @ 5A, 5V - - ±10V 1200 pF @ 25 V - 60W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFD9120

IRFD9120

MOSFET P-CH 100V 1A 4DIP

Harris Corporation
41,464 -

RFQ

IRFD9120

Ficha técnica

Bulk - Obsolete P-Channel MOSFET (Metal Oxide) 100 V 1A (Ta) 10V 600mOhm @ 600mA, 10V 4V @ 250µA 18 nC @ 10 V ±20V 390 pF @ 25 V - 1.3W (Ta) -55°C ~ 175°C (TJ) Through Hole
RFP50N05

RFP50N05

N-CHANNEL POWER MOSFET

Harris Corporation
30,879 -

RFQ

RFP50N05

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 50 V 50A (Tc) 10V 22mOhm @ 50A, 10V 4V @ 250nA 160 nC @ 20 V ±20V - - 132W (Tc) -55°C ~ 175°C (TJ) Through Hole
HUF75339P3

HUF75339P3

MOSFET N-CH 55V 75A TO220-3

Harris Corporation
31,790 -

RFQ

HUF75339P3

Ficha técnica

Tube UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 12mOhm @ 75A, 10V 4V @ 250µA 130 nC @ 20 V ±20V 2000 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
RFD16N05

RFD16N05

MOSFET N-CH 50V 16A IPAK

Harris Corporation
2,800 -

RFQ

RFD16N05

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 50 V 16A (Tc) 10V 47mOhm @ 16A, 10V 4V @ 250µA 80 nC @ 20 V ±20V 900 pF @ 25 V - 72W (Tc) -55°C ~ 175°C (TJ) Through Hole
RFD16N05L

RFD16N05L

N-CHANNEL POWER MOSFET

Harris Corporation
33,102 -

RFQ

RFD16N05L

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 50 V 16A (Tc) 4V, 5V 47mOhm @ 16A, 5V 2V @ 250mA 80 nC @ 10 V ±10V - - 60W (Tc) -55°C ~ 150°C (TJ) Through Hole
RFP50N06

RFP50N06

MOSFET N-CH 60V 50A TO220-3

Harris Corporation
13,469 -

RFQ

RFP50N06

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 10V 22mOhm @ 50A, 10V 4V @ 250µA 150 nC @ 20 V ±20V 2020 pF @ 25 V - 131W (Tc) -55°C ~ 175°C (TJ) Through Hole
RFP15N12

RFP15N12

N-CHANNEL POWER MOSFET

Harris Corporation
12,478 -

RFQ

RFP15N12

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 120 V 15A (Tc) 10V 150mOhm @ 7.5A, 10V 4V @ 1mA - ±20V 1700 pF @ 25 V - 75W (Tc) -55°C ~ 150°C (TJ) Through Hole
RFP10N12L

RFP10N12L

N-CHANNEL POWER MOSFET

Harris Corporation
54,904 -

RFQ

RFP10N12L

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 120 V 10A (Tc) 5V 300mOhm @ 5A, 5V - - ±10V 1200 pF @ 25 V - 60W (Tc) -55°C ~ 150°C (TJ) Through Hole
RFP42N03L

RFP42N03L

MOSFET N-CH 30V 42A TO220AB

Harris Corporation
63,600 -

RFQ

RFP42N03L

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 30 V 42A (Tc) - 25mOhm @ 42A, 5V 2V @ 250µA 60 nC @ 10 V ±10V 1650 pF @ 25 V - 90W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF9530

IRF9530

MOSFET P-CH 100V 12A TO220AB

Harris Corporation
3,861 -

RFQ

IRF9530

Ficha técnica

Bulk - Active P-Channel MOSFET (Metal Oxide) 100 V 12A (Tc) - 300mOhm @ 6.5A, 10V 4V @ 250µA 45 nC @ 10 V ±20V 500 pF @ 25 V - 75W (Tc) -55°C ~ 150°C (TJ) Through Hole
RFP15P05

RFP15P05

MOSFET P-CH 50V 15A TO220-3

Harris Corporation
90,852 -

RFQ

RFP15P05

Ficha técnica

Tube - Obsolete P-Channel MOSFET (Metal Oxide) 50 V 15A (Tc) 10V 150mOhm @ 15A, 10V 4V @ 250µA 150 nC @ 20 V ±20V 1150 pF @ 25 V - 80W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF632

IRF632

N-CHANNEL POWER MOSFET

Harris Corporation
22,035 -

RFQ

IRF632

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 200 V 8A (Tc) 10V 600mOhm @ 5A, 10V 4V @ 250µA 30 nC @ 10 V ±20V 600 pF @ 25 V - 75W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF9630

IRF9630

MOSFET P-CH 200V 6.5A TO220AB

Harris Corporation
28,718 -

RFQ

IRF9630

Ficha técnica

Tube - Obsolete P-Channel MOSFET (Metal Oxide) 200 V 6.5A (Tc) 10V 800mOhm @ 3.9A, 10V 4V @ 250µA 29 nC @ 10 V ±20V 700 pF @ 25 V - 74W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF830

IRF830

MOSFET N-CH 500V 4.5A TO220-3

Harris Corporation
329 -

RFQ

IRF830

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 500 V 4.5A (Tc) - 1.5Ohm @ 2.5A, 10V 4V @ 250µA 32 nC @ 10 V ±20V 600 pF @ 25 V - 75W (Tc) -55°C ~ 150°C (TJ) Through Hole
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1500+ Promedio diario de RFQ
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20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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