Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRFF222

IRFF222

N-CHANNEL POWER MOSFET

Harris Corporation
2,621 -

RFQ

IRFF222

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 200 V 3A (Tc) 10V 1.2Ohm @ 2A, 10V 4V @ 250µA 15 nC @ 10 V ±20V 450 pF @ 25 V - 20W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFD111

IRFD111

SMALL SIGNAL N-CHANNEL MOSFET

Harris Corporation
2,676 -

RFQ

IRFD111

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 80 V 1A (Tc) 10V 600mOhm @ 800mA, 10V 4V @ 250µA 7 nC @ 10 V ±20V 135 pF @ 25 V - 1W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFF213

IRFF213

N-CHANNEL POWER MOSFET

Harris Corporation
2,081 -

RFQ

IRFF213

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 150 V 1.8A (Tc) 10V 2.4Ohm @ 1.25A, 10V 4V @ 250µA 7.5 nC @ 10 V ±20V 135 pF @ 25 V - 15W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFBC42R

IRFBC42R

N-CHANNEL POWER MOSFET

Harris Corporation
2,199 -

RFQ

IRFBC42R

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 600 V 5.4A (Tc) 10V 1.6Ohm @ 3.4A, 10V 4V @ 250µA 60 nC @ 10 V ±20V 1300 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFF322

IRFF322

N-CHANNEL POWER MOSFET

Harris Corporation
2,755 -

RFQ

IRFF322

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 400 V 2A (Tc) 10V 2.5Ohm @ 1.25A, 10V 4V @ 250µA 15 nC @ 10 V 20V 450 pF @ 25 V - 20W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFP142R

IRFP142R

N-CHANNEL POWER MOSFET

Harris Corporation
3,176 -

RFQ

IRFP142R

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 100 V 27A (Tc) 10V 99mOhm @ 19A, 10V 4V @ 250µA 59 nC @ 10 V ±20V 1275 pF @ 25 V - 180W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFF9122

IRFF9122

P-CHANNEL POWER MOSFET

Harris Corporation
3,617 -

RFQ

IRFF9122

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 100 V 3.5A (Tc) - - - - - - - 20W - Through Hole
IRFF9131

IRFF9131

P-CHANNEL POWER MOSFET

Harris Corporation
2,558 -

RFQ

IRFF9131

Ficha técnica

Bulk - Active P-Channel MOSFET (Metal Oxide) 80 V 6.5A (Tc) 10V 300mOhm @ 3A, 10V 4V @ 250µA 45 nC @ 10 V ±20V 500 pF @ 25 V - 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFF423

IRFF423

N-CHANNEL POWER MOSFET

Harris Corporation
3,938 -

RFQ

IRFF423

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 450 V 1.4A (Tc) 10V 4Ohm @ 1A, 10V 4V @ 250µA 15 nC @ 10 V ±20V 300 pF @ 25 V - 20W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFP140R

IRFP140R

N-CHANNEL POWER MOSFET

Harris Corporation
2,257 -

RFQ

IRFP140R

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 100 V 31A (Tc) 10V 77mOhm @ 19A, 10V 4V @ 250µA 59 nC @ 10 V ±20V 1275 pF @ 25 V - 180W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFF9132

IRFF9132

P-CHANNEL POWER MOSFET

Harris Corporation
3,494 -

RFQ

IRFF9132

Ficha técnica

Bulk - Active P-Channel MOSFET (Metal Oxide) 100 V 5.5A (Tc) 10V 400mOhm @ 3A, 10V 4V @ 250µA 45 nC @ 10 V ±20V 500 pF @ 25 V - 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFF9222

IRFF9222

P-CHANNEL POWER MOSFET

Harris Corporation
3,135 -

RFQ

IRFF9222

Ficha técnica

Bulk - Active P-Channel MOSFET (Metal Oxide) 200 V 2A (Ta) 10V 2.4Ohm @ 1.5A, 10V 4V @ 250µA 22 nC @ 10 V ±20V 350 pF @ 25 V - 20W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFF223

IRFF223

N-CHANNEL POWER MOSFET

Harris Corporation
3,193 -

RFQ

IRFF223

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 150 V 3A (Tc) 10V 1.2Ohm @ 2A, 10V 4V @ 250µA 15 nC @ 10 V ±20V 450 pF @ 25 V - 20W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFP152

IRFP152

N-CHANNEL POWER MOSFET

Harris Corporation
3,229 -

RFQ

IRFP152

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 100 V 34A (Tc) 10V 80mOhm @ 22A, 10V 4V @ 250µA 110 nC @ 10 V ±20V 2000 pF @ 25 V - 180W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFP153

IRFP153

N-CHANNEL POWER MOSFET

Harris Corporation
2,728 -

RFQ

IRFP153

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 60 V 34A (Tc) 10V 80mOhm @ 22A, 10V 4V @ 250µA 110 nC @ 10 V ±20V 2000 pF @ 25 V - 180W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFP450R

IRFP450R

N-CHANNEL POWER MOSFET

Harris Corporation
2,028 -

RFQ

IRFP450R

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 500 V 14A (Tc) 10V 400mOhm @ 7.9A, 10V 4V @ 250µA 130 nC @ 10 V ±20V 2000 pF @ 25 V - 180W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFU321

IRFU321

N-CHANNEL POWER MOSFET

Harris Corporation
3,546 -

RFQ

IRFU321

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 350 V 3.1A (Ta) 10V 1.8Ohm @ 1.7A, 10V 4V @ 250µA 20 nC @ 10 V ±20V 350 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
HUF76132S3

HUF76132S3

N-CHANNEL POWER MOSFET

Harris Corporation
3,540 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
RFD8P06ESM

RFD8P06ESM

P-CHANNEL POWER MOSFET

Harris Corporation
3,314 -

RFQ

RFD8P06ESM

Ficha técnica

Bulk - Active P-Channel MOSFET (Metal Oxide) 60 V 8A - - - - - - - - - Surface Mount
RFL1P08

RFL1P08

P-CHANNEL MOSFET

Harris Corporation
2,688 -

RFQ

RFL1P08

Ficha técnica

Bulk - Active P-Channel MOSFET (Metal Oxide) 80 V 1A (Tc) 10V 3.65Ohm @ 1A, 10V 4V @ 250µA - ±20V 150 pF @ 25 V - 8.33W (Tc) -55°C ~ 150°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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