Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
2N6756

2N6756

N-CHANNEL POWER MOSFET

Harris Corporation
3,582 -

RFQ

2N6756

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 100 V 14A (Tc) 10V 210mOhm @ 14A, 10V 4V @ 250µA 35 nC @ 10 V ±20V - - 4W (Ta), 75W (Tc) -55°C ~ 150°C (TJ) Through Hole
2N6767

2N6767

N-CHANNEL POWER MOSFET

Harris Corporation
3,097 -

RFQ

2N6767

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 350 V 12A (Tc) 10V 400mOhm @ 7.75A, 10V 4V @ 1mA - ±20V 3000 pF @ 25 V - 150W (Tc) -55°C ~ 150°C (TJ) Through Hole
2N6760

2N6760

N-CHANNEL POWER MOSFET

Harris Corporation
3,527 -

RFQ

Bulk - Active N-Channel MOSFET (Metal Oxide) 400 V 5.5A (Tc) 10V 1.22Ohm @ 5.5A, 10V 4V @ 250µA 39 nC @ 10 V ±20V - - 4W (Ta), 75W (Tc) -55°C ~ 150°C (TJ) Through Hole
2N6761

2N6761

N-CHANNEL POWER MOSFET

Harris Corporation
3,615 -

RFQ

2N6761

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 450 V 4A (Tc) 10V 2Ohm @ 2.5A, 10V 4V @ 1mA - ±20V 800 pF @ 25 V - 75W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF122

IRF122

N-CHANNEL POWER MOSFET

Harris Corporation
3,958 -

RFQ

IRF122

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 100 V 8A (Tc) 10V 360mOhm @ 5.6A, 10V 4V @ 250µA 15 nC @ 10 V ±20V 350 pF @ 25 V - 60W (Tc) -55°C ~ 175°C (TJ) Through Hole
2N6786

2N6786

N-CHANNEL POWER MOSFET

Harris Corporation
3,895 -

RFQ

2N6786

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 400 V 1.25A (Tc) 10V 3.7Ohm @ 1.25A, 10V 4V @ 250µA 12 nC @ 10 V ±20V 170 pF @ 25 V - 15W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF341

IRF341

N-CHANNEL POWER MOSFET

Harris Corporation
3,892 -

RFQ

IRF341

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 350 V 10A (Tc) 10V 550mOhm @ 5.2A, 10V 4V @ 250µA 63 nC @ 10 V ±20V 1250 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF442

IRF442

N-CHANNEL POWER MOSFET

Harris Corporation
3,754 -

RFQ

IRF442

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 500 V 7A (Tc) 10V 1.1Ohm @ 4.4A, 10V 4V @ 250µA 63 nC @ 10 V ±20V 1225 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF640R

IRF640R

N-CHANNEL POWER MOSFET

Harris Corporation
3,253 -

RFQ

IRF640R

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 200 V 18A (Tc) 10V 180mOhm @ 10A, 10V 4V @ 250µA 64 nC @ 10 V ±20V 1275 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF453

IRF453

N-CHANNEL POWER MOSFET

Harris Corporation
3,974 -

RFQ

IRF453

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 450 V 7.2A (Tc) 10V 500mOhm @ 7.2A, 10V 4V @ 250µA 130 nC @ 10 V ±20V 1800 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
2N7224JANTXV

2N7224JANTXV

NPN POWER TRANSISTOR

Harris Corporation
3,230 -

RFQ

2N7224JANTXV

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 100 V 34A (Tc) 10V 81mOhm @ 34A, 10V 4V @ 250µA 125 nC @ 10 V ±20V - - 4W (Ta), 150W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF710R

IRF710R

N-CHANNEL POWER MOSFET

Harris Corporation
3,451 -

RFQ

IRF710R

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 400 V 2A (Tc) 10V 3.6Ohm @ 1.1A, 10V 4V @ 250µA 12 nC @ 10 V ±20V 135 pF @ 25 V - 36W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF612

IRF612

N-CHANNEL POWER MOSFET

Harris Corporation
2,569 -

RFQ

IRF612

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 200 V 2.6A (Tc) 10V 2.4Ohm @ 1.6A, 10V 4V @ 250µA 8.2 nC @ 10 V ±20V 135 pF @ 25 V - 43W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF633

IRF633

N-CHANNEL POWER MOSFET

Harris Corporation
3,366 -

RFQ

IRF633

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 150 V 8A (Tc) 10V 600mOhm @ 5A, 10V 4V @ 250µA 30 nC @ 10 V ±20V 600 pF @ 25 V - 75W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF712

IRF712

N-CHANNEL POWER MOSFET

Harris Corporation
3,836 -

RFQ

IRF712

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 400 V 1.7A (Tc) 10V 5Ohm @ 1.1A, 10V 4V @ 250µA 12 nC @ 10 V ±20V 135 pF @ 25 V - 36W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF740R

IRF740R

N-CHANNEL POWER MOSFET

Harris Corporation
2,843 -

RFQ

IRF740R

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 400 V 10A (Tc) 10V 550mOhm @ 5.2A, 10V 4V @ 250µA 63 nC @ 10 V ±20V 1250 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF9511

IRF9511

P-CHANNEL POWER MOSFET

Harris Corporation
2,496 -

RFQ

IRF9511

Ficha técnica

Bulk - Active P-Channel MOSFET (Metal Oxide) 80 V 3A (Tc) 10V 1.2Ohm @ 1.5A, 10V 4V @ 250µA 11 nC @ 10 V ±20V 180 pF @ 25 V - 20W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF9621

IRF9621

P-CHANNEL POWER MOSFET

Harris Corporation
3,049 -

RFQ

IRF9621

Ficha técnica

Bulk - Active P-Channel MOSFET (Metal Oxide) 150 V 3.5A (Tc) 10V 1.5Ohm @ 1.5A, 10V 4V @ 250µA 22 nC @ 10 V ±20V 350 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFD122

IRFD122

SMALL SIGNAL N-CHANNEL MOSFET

Harris Corporation
2,032 -

RFQ

IRFD122

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 100 V 1.1A (Tc) 10V 400mOhm @ 600mA, 10V 4V @ 250µA 15 nC @ 10 V ±20V 450 pF @ 25 V - 1W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFBC40R

IRFBC40R

N-CHANNEL POWER MOSFET

Harris Corporation
3,162 -

RFQ

IRFBC40R

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 600 V 6.2A (Tc) 10V 1.2Ohm @ 3.4A, 10V 4V @ 250µA 60 nC @ 10 V ±20V 1300 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
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1500+ Promedio diario de RFQ
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20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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