Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
RFP15N05L

RFP15N05L

MOSFET N-CH 50V 15A TO220-3

Harris Corporation
2,194 -

RFQ

RFP15N05L

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 50 V 15A (Tc) 5V 140mOhm @ 15A, 5V 2V @ 250µA - ±10V 900 pF @ 25 V - 60W (Tc) -55°C ~ 150°C (TJ) Through Hole
HUF75345P3

HUF75345P3

MOSFET N-CH 55V 75A TO220-3

Harris Corporation
1,005 -

RFQ

HUF75345P3

Ficha técnica

Tube UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 7mOhm @ 75A, 10V 4V @ 250µA 275 nC @ 20 V ±20V 4000 pF @ 25 V - 325W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFU9220

IRFU9220

MOSFET P-CH 200V 3.6A TO251AA

Harris Corporation
3,563 -

RFQ

IRFU9220

Ficha técnica

Tube - Obsolete P-Channel MOSFET (Metal Oxide) 200 V 3.6A (Tc) 10V 1.5Ohm @ 2.2A, 10V 4V @ 250µA 20 nC @ 10 V ±20V 340 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) Through Hole
HUF75333P3

HUF75333P3

MOSFET N-CH 55V 66A TO220-3

Harris Corporation
2,452 -

RFQ

HUF75333P3

Ficha técnica

Tube UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 66A (Tc) - 16mOhm @ 66A, 10V 4V @ 250µA 85 nC @ 20 V ±20V 1300 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF121

IRF121

MOSFET N-CH 60V 8A TO204AA

Harris Corporation
2,980 -

RFQ

IRF121

Ficha técnica

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 8A (Ta) - - - - - - - - - Chassis Mount
IRFP244

IRFP244

MOSFET N-CH 250V 15A TO247-3

Harris Corporation
2,463 -

RFQ

IRFP244

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 250 V 15A (Tc) 10V 280mOhm @ 9A, 10V 4V @ 250µA 63 nC @ 10 V ±20V 1400 pF @ 25 V - 150W (Tc) -55°C ~ 150°C (TJ) Through Hole
RFD3055LESM9A

RFD3055LESM9A

MOSFET N-CH 60V 11A TO252AA

Harris Corporation
2,013 -

RFQ

RFD3055LESM9A

Ficha técnica

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 11A (Tc) 5V 107mOhm @ 8A, 5V 3V @ 250µA 11.3 nC @ 10 V ±16V 350 pF @ 25 V - 38W (Tc) -55°C ~ 175°C (TJ) Surface Mount
RFG40N10

RFG40N10

N-CHANNEL POWER MOSFET

Harris Corporation
3,347 -

RFQ

RFG40N10

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 100 V 40A (Tc) 10V 40mOhm @ 40A, 10V 4V @ 250µA 300 nC @ 20 V ±20V - - 160W (Tc) -55°C ~ 175°C (TJ) Through Hole
HUF75337P3

HUF75337P3

MOSFET N-CH 55V 75A TO220-3

Harris Corporation
3,451 -

RFQ

HUF75337P3

Ficha técnica

Tube UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) - 14mOhm @ 75A, 10V 4V @ 250µA 109 nC @ 20 V ±20V 1775 pF @ 25 V - 175W (Tc) -55°C ~ 175°C (TJ) Through Hole
HUF75343G3

HUF75343G3

MOSFET N-CH 55V 75A TO247

Harris Corporation
2,971 -

RFQ

HUF75343G3

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) - 9mOhm @ 75A, 10V 4V @ 250µA 205 nC @ 20 V ±20V 3000 pF @ 25 V - 270W (Tc) -55°C ~ 175°C (TJ) Through Hole
RFD16N05LSM

RFD16N05LSM

N-CHANNEL POWER MOSFET

Harris Corporation
2,984 -

RFQ

RFD16N05LSM

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 50 V 16A (Tc) 4V, 5V 47mOhm @ 16A, 5V 2V @ 250mA 80 nC @ 10 V ±10V - - 60W (Tc) -55°C ~ 150°C (TJ) Surface Mount
HUF75309P3

HUF75309P3

MOSFET N-CH 55V 19A TO220-3

Harris Corporation
2,476 -

RFQ

HUF75309P3

Ficha técnica

Tube UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 19A (Tc) - 70mOhm @ 19A, 10V 4V @ 250µA 24 nC @ 20 V ±20V 350 pF @ 25 V - 55W (Tc) -55°C ~ 175°C (TJ) Through Hole
RFD3055

RFD3055

MOSFET N-CH 60V 12A IPAK

Harris Corporation
3,616 -

RFQ

RFD3055

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 12A (Tc) - 150mOhm @ 12A, 10V 4V @ 250µA 23 nC @ 20 V ±20V 300 pF @ 25 V - 53W (Tc) -55°C ~ 175°C (TJ) Through Hole
RFD14N05LSM9A

RFD14N05LSM9A

MOSFET N-CH 50V 14A TO252AA

Harris Corporation
2,996 -

RFQ

RFD14N05LSM9A

Ficha técnica

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 50 V 14A (Tc) 5V 100mOhm @ 14A, 5V 2V @ 250µA 40 nC @ 10 V ±10V 670 pF @ 25 V - 48W (Tc) -55°C ~ 175°C (TJ) Surface Mount
RFP12N10L

RFP12N10L

MOSFET N-CH 100V 12A TO220-3

Harris Corporation
2,824 -

RFQ

RFP12N10L

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 100 V 12A (Tc) 5V 200mOhm @ 12A, 5V 2V @ 250µA - ±10V 900 pF @ 25 V - 60W (Tc) -55°C ~ 150°C (TJ) Through Hole
RF1S30N06LESM9A

RF1S30N06LESM9A

N-CHANNEL POWER MOSFET

Harris Corporation
3,296 -

RFQ

RF1S30N06LESM9A

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
RFD15P06SM

RFD15P06SM

P-CHANNEL POWER MOSFET

Harris Corporation
3,621 -

RFQ

RFD15P06SM

Ficha técnica

Bulk - Active P-Channel MOSFET (Metal Oxide) 60 V 15A - - - - - - - - - Surface Mount
IRF133

IRF133

N-CHANNEL POWER MOSFET

Harris Corporation
2,274 -

RFQ

IRF133

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 80 V 12A (Tc) 10V 230mOhm @ 8.3A, 10V 4V @ 250µA 26 nC @ 10 V ±20V 600 pF @ 25 V - 79W (Tc) -55°C ~ 175°C (TJ) Through Hole
2N6757

2N6757

N-CHANNEL POWER MOSFET

Harris Corporation
2,230 -

RFQ

2N6757

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 150 V 8A (Tc) 10V 600mOhm @ 5A, 10V 4V @ 1mA - ±20V 800 pF @ 25 V - 75W (Tc) -55°C ~ 150°C (TJ) Through Hole
2N6895

2N6895

P-CHANNEL, MOSFET

Harris Corporation
2,774 -

RFQ

2N6895

Ficha técnica

Bulk - Active P-Channel MOSFET (Metal Oxide) 100 V 1.16A (Tc) 10V 3.65Ohm @ 740mA, 10V 4V @ 250µA - ±20V 150 pF @ 25 V - 8.33W (Tc) -55°C ~ 150°C (TJ) Through Hole
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1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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