Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRL7472L1TRPBF

IRL7472L1TRPBF

IRL7472L1 - 12V-300V N-CHANNEL P

International Rectifier
165 -

RFQ

Bulk StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 40 V 375A (Tc) 4.5V, 10V 0.59mOhm @ 195A, 10V 2.5V @ 250µA 330 nC @ 4.5 V ±20V 20082 pF @ 25 V - 3.8W (Ta), 341W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRF1324STRL7P

AUIRF1324STRL7P

MOSFET N-CH 24V 340A D2PAK

International Rectifier
601 -

RFQ

AUIRF1324STRL7P

Ficha técnica

Bulk Automotive, AEC-Q101, HEXFET® Active N-Channel MOSFET (Metal Oxide) 24 V 340A (Tc) 10V 1.65mOhm @ 195A, 10V 4V @ 250µA 240 nC @ 10 V ±20V 7590 pF @ 24 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFP4004

AUIRFP4004

MOSFET N-CH 40V 195A TO247AC

International Rectifier
303 -

RFQ

AUIRFP4004

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 195A (Tc) 10V 1.7mOhm @ 195A, 10V 4V @ 250µA 330 nC @ 10 V ±20V 8920 pF @ 25 V - 380W (Tc) -55°C ~ 175°C (TJ) Through Hole
2N6787

2N6787

POWER FIELD-EFFECT TRANSISTOR, N

International Rectifier
943 -

RFQ

2N6787

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
2N6847

2N6847

POWER FIELD-EFFECT TRANSISTOR, P

International Rectifier
186 -

RFQ

2N6847

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IRFR3707PBF

IRFR3707PBF

MOSFET N-CH 30V 61A DPAK

International Rectifier
3,464 -

RFQ

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 61A (Tc) 4.5V, 10V 13mOhm @ 15A, 10V 3V @ 250µA 19 nC @ 4.5 V ±20V 1990 pF @ 15 V - 87W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFHM8337TRPBF-IR

IRFHM8337TRPBF-IR

MOSFET N-CH 30V 12A 8PQFN DL

International Rectifier
3,291 -

RFQ

IRFHM8337TRPBF-IR

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 12A (Ta) - 12.4mOhm @ 12A, 10V 2.35V @ 25µA 8.1 nC @ 4.5 V ±20V 755 pF @ 15 V - 2.8W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF7601PBF

IRF7601PBF

MOSFET N-CH 20V 5.7A MICRO8

International Rectifier
2,091 -

RFQ

IRF7601PBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 20 V 5.7A (Ta) - 35mOhm @ 3.8A, 4.5V 700mV @ 250µA (Min) 22 nC @ 4.5 V ±12V 650 pF @ 15 V - 1.8W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF9335PBF

IRF9335PBF

AUTOMOTIVE HEXFET P-CHANNEL POWE

International Rectifier
2,902 -

RFQ

IRF9335PBF

Ficha técnica

Bulk HEXFET® Active P-Channel MOSFET (Metal Oxide) 30 V 5.4A (Ta) 4.5V, 10V 59mOhm @ 5.4A, 10V 2.4V @ 10µA 14 nC @ 10 V ±20V 386 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFR4105ZPBF

IRFR4105ZPBF

MOSFET N-CH 55V 30A DPAK

International Rectifier
2,162 -

RFQ

IRFR4105ZPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 30A (Tc) - 24.5mOhm @ 18A, 10V 4V @ 250µA 27 nC @ 10 V ±20V 740 pF @ 25 V - 48W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF7401PBF

IRF7401PBF

HEXFET POWER MOSFET

International Rectifier
2,630 -

RFQ

IRF7401PBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 20 V 8.7A (Ta) 2.7V, 4.5V 22mOhm @ 4.1A, 4.5V 700mV @ 250µA (Min) 48 nC @ 4.5 V ±12V 1600 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7413PBF

IRF7413PBF

MOSFET N-CH 30V 13A 8SO

International Rectifier
2,873 -

RFQ

IRF7413PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 13A (Ta) 4.5V, 10V 11mOhm @ 7.3A, 10V 3V @ 250µA 79 nC @ 10 V ±20V 1800 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFR3411PBF

IRFR3411PBF

MOSFET N-CH 100V 32A DPAK

International Rectifier
3,826 -

RFQ

IRFR3411PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 32A (Tc) - 44mOhm @ 16A, 10V 4V @ 250µA 71 nC @ 10 V ±20V 1960 pF @ 25 V - 130W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLR8259PBF

IRLR8259PBF

HEXFET POWER MOSFET

International Rectifier
3,141 -

RFQ

IRLR8259PBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 25 V 57A (Tc) 4.5V, 10V 8.7mOhm @ 21A, 10V 2.35V @ 25µA 10 nC @ 4.5 V ±20V 900 pF @ 13 V - 48W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF7470PBF

IRF7470PBF

MOSFET N-CH 40V 10A 8SO

International Rectifier
3,360 -

RFQ

IRF7470PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 10A (Ta) 2.8V, 10V 13mOhm @ 10A, 10V 2V @ 250µA 44 nC @ 4.5 V ±12V 3430 pF @ 20 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFR7746PBF

IRFR7746PBF

HEXFET POWER MOSFET

International Rectifier
2,440 -

RFQ

IRFR7746PBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 75 V 56A (Tc) 6V, 10V 11.2mOhm @ 35A, 10V 3.7V @ 100µA 89 nC @ 10 V ±20V 3107 pF @ 25 V - 99W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLR2908PBF

IRLR2908PBF

HEXFET POWER MOSFET

International Rectifier
2,849 -

RFQ

IRLR2908PBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 80 V 30A (Tc) 4.5V, 10V 28mOhm @ 23A, 10V 2.5V @ 250µA 33 nC @ 4.5 V ±16V 1890 pF @ 25 V - 120W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFU3806PBF

IRFU3806PBF

MOSFET N-CH 60V 43A IPAK

International Rectifier
2,293 -

RFQ

IRFU3806PBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 60 V 43A (Tc) - 15.8mOhm @ 25A, 10V 4V @ 50µA 30 nC @ 10 V ±20V 1150 pF @ 50 V - 71W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFH7194TRPBF

IRFH7194TRPBF

HEXFET POWER MOSFET

International Rectifier
2,047 -

RFQ

IRFH7194TRPBF

Ficha técnica

Bulk FASTIRFET™, HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 11A (Ta), 35A (Tc) 10V 16.4mOhm @ 21A, 10V 3.6V @ 50µA 19 nC @ 10 V ±20V 733 pF @ 50 V - 3.6W (Ta), 39W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRL3103STRLPBF

IRL3103STRLPBF

IRL3103 - HEXFET POWER MOSFET

International Rectifier
2,023 -

RFQ

IRL3103STRLPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 64A (Tc) 4.5V, 10V 12mOhm @ 34A, 10V 1V @ 250µA 33 nC @ 4.5 V ±16V 1650 pF @ 25 V - 94W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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