Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
AUIRLR2703

AUIRLR2703

MOSFET N-CH 30V 20A DPAK

International Rectifier
6,804 -

RFQ

AUIRLR2703

Ficha técnica

Bulk Automotive, AEC-Q101, HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 20A (Tc) - 45mOhm @ 14A, 10V 1V @ 250µA 15 nC @ 4.5 V ±16V 450 pF @ 25 V - 45W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF6892STRPBF

IRF6892STRPBF

25V 999A DIRECTFET-LV

International Rectifier
3,790 -

RFQ

IRF6892STRPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 25 V 28A (Ta), 125A (Tc) 4.5V, 10V 1.7mOhm @ 28A, 10V 2.1V @ 50µA 25 nC @ 4.5 V ±16V 2510 pF @ 13 V - 2.1W (Ta), 42W (Tc) -40°C ~ 150°C (TJ) Surface Mount
AUIRFR5410-IR

AUIRFR5410-IR

AUTOMOTIVE HEXFET P CHANNEL

International Rectifier
2,887 -

RFQ

AUIRFR5410-IR

Ficha técnica

Bulk HEXFET® Active P-Channel MOSFET (Metal Oxide) 100 V 13A (Tc) 10V 205mOhm @ 7.8A, 10V 4V @ 250µA 58 nC @ 10 V ±20V 760 pF @ 25 V - 66W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF6810STRPBF

IRF6810STRPBF

PFET, 16A I(D), 25V, 0.0052OHM

International Rectifier
4,760 -

RFQ

IRF6810STRPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 25 V 16A (Ta), 50A (Tc) 4.5V, 10V 5.2mOhm @ 16A, 10V 2.1V @ 25µA 11 nC @ 4.5 V ±16V 1038 pF @ 13 V - 2.1W (Ta), 20W (Tc) -40°C ~ 150°C (TJ)
IRFB7446GPBF

IRFB7446GPBF

IRFB7446 - POWER MOSFET

International Rectifier
1,157 -

RFQ

IRFB7446GPBF

Ficha técnica

Bulk HEXFET®, StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 6V, 10V 3.3mOhm @ 70A, 10V 3.9V @ 100µA 93 nC @ 10 V ±20V 3183 pF @ 25 V - 99W (Tc) - Through Hole
IRFZ44NSTRRPBF

IRFZ44NSTRRPBF

HEXFET POWER MOSFET

International Rectifier
450 -

RFQ

IRFZ44NSTRRPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 49A (Tc) 10V 17.5mOhm @ 25A, 10V 4V @ 250µA 63 nC @ 10 V ±20V 1470 pF @ 25 V - 3.8W (Ta), 94W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRLZ24NS

AUIRLZ24NS

AUTOMOTIVE HEXFET POWER MOSFET

International Rectifier
2,902 -

RFQ

AUIRLZ24NS

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 18A (Tc) 4V, 10V 60mOhm @ 11A, 10V 2V @ 250µA 15 nC @ 5 V ±16V 480 pF @ 25 V - 3.8W (Ta), 45W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF6711STRPBF

IRF6711STRPBF

MOSFET N-CH 25V 19A/84A DIRECTFT

International Rectifier
4,800 -

RFQ

IRF6711STRPBF

Ficha técnica

Bulk DirectFET™ Active N-Channel MOSFET (Metal Oxide) 25 V 19A (Ta), 84A (Tc) - 3.8mOhm @ 19A, 10V 2.35V @ 25µA 20 nC @ 4.5 V ±20V 1810 pF @ 13 V - 2.2W (Ta), 42W (Tc) -40°C ~ 150°C (TJ) Surface Mount
AUIRFU1010Z

AUIRFU1010Z

MOSFET N-CH 55V 42A TO251-3

International Rectifier
825 -

RFQ

AUIRFU1010Z

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 55 V 42A (Tc) - 7.5mOhm @ 42A, 10V 4V @ 100µA 95 nC @ 10 V ±20V 2840 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Through Hole
AUIRFR3504TRL

AUIRFR3504TRL

MOSFET N-CH 40V 56A DPAK

International Rectifier
8,645 -

RFQ

AUIRFR3504TRL

Ficha técnica

Bulk Automotive, AEC-Q101, HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 56A (Tc) - 9.2mOhm @ 30A, 10V 4V @ 250µA 71 nC @ 10 V ±20V 2150 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRL6283MTRPBF

IRL6283MTRPBF

DIRECTFET N-CHANNEL POWER MOSFET

International Rectifier
4,800 -

RFQ

IRL6283MTRPBF

Ficha técnica

Bulk HEXFET®, StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 20 V 38A (Ta), 211A (Tc) 2.5V, 4.5V 0.75mOhm @ 50A, 10V 1.1V @ 100µA 158 nC @ 4.5 V ±12V 8292 pF @ 10 V - 2.1W (Ta), 63W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IRF234

IRF234

N-CHANNEL HERMETIC MOS HEXFET

International Rectifier
789 -

RFQ

IRF234

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IRF6713STRPBF

IRF6713STRPBF

MOSFET N-CH 25V 22A/95A DIRECTFT

International Rectifier
2,745 -

RFQ

IRF6713STRPBF

Ficha técnica

Bulk DirectFET™ Active N-Channel MOSFET (Metal Oxide) 25 V 22A (Ta), 95A (Tc) - 3mOhm @ 22A, 10V 2.4V @ 50µA 32 nC @ 4.5 V ±20V 2880 pF @ 13 V - 2.2W (Ta), 42W (Tc) -40°C ~ 150°C (TJ) Surface Mount
AUIRFR4104

AUIRFR4104

AUTOMOTIVE HEXFET N CHANNEL

International Rectifier
8,742 -

RFQ

AUIRFR4104

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 42A (Tc) 10V 5.5mOhm @ 42A, 10V 4V @ 250µA 89 nC @ 10 V ±20V 2950 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRL1404PBF

IRL1404PBF

HEXFET POWER MOSFET

International Rectifier
481 -

RFQ

IRL1404PBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 160A (Tc) 4.3V, 10V 4mOhm @ 95A, 10V 3V @ 250µA 140 nC @ 5 V ±20V 6590 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
AUIRLU3114Z-701TRL

AUIRLU3114Z-701TRL

AUTOMOTIVE HEXFET N-CHANNEL

International Rectifier
2,992 -

RFQ

AUIRLU3114Z-701TRL

Ficha técnica

Bulk Automotive, AEC-Q101, HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 42A (Tc) 4.5V, 10V 4.9mOhm @ 42A, 10V 2.5V @ 100µA 56 nC @ 4.5 V ±16V 3810 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Through Hole
AUIRLR3705Z

AUIRLR3705Z

AUTOMOTIVE HEXFET N-CHANNEL

International Rectifier
449 -

RFQ

AUIRLR3705Z

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 42A (Tc) 4.5V, 10V 8mOhm @ 42A, 10V 3V @ 250µA 66 nC @ 5 V ±16V 2900 pF @ 25 V - 130W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFS8407TRR

AUIRFS8407TRR

MOSFET N-CH 40V 195A D2PAK

International Rectifier
395 -

RFQ

AUIRFS8407TRR

Ficha técnica

Bulk Automotive, AEC-Q101, HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 195A (Tc) - 1.8mOhm @ 100A, 10V 4V @ 150µA 225 nC @ 10 V ±20V 7330 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFH4210DTRPBF

IRFH4210DTRPBF

HEXFET POWER MOSFET

International Rectifier
937 -

RFQ

IRFH4210DTRPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 25 V 44A (Ta) 4.5V, 10V 1.1mOhm @ 50A, 10V 2.1V @ 100µA 77 nC @ 10 V ±20V 4812 pF @ 13 V - 3.5W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRL8114PBF

IRL8114PBF

MOSFET N-CH 30V 90A TO220AB

International Rectifier
5,900 -

RFQ

IRL8114PBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 90A (Tc) - 4.5mOhm @ 40A, 10V 2.25V @ 250µA 29 nC @ 4.5 V ±20V 2660 pF @ 15 V - 115W (Tc) -55°C ~ 175°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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