Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
AUIRL1404S

AUIRL1404S

PFET, 160A I(D), 40V, 0.004OHM

International Rectifier
2,225 -

RFQ

AUIRL1404S

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 160A (Tc) 4.3V, 10V 4mOhm @ 95A, 10V 3V @ 250µA 140 nC @ 5 V ±20V 6600 pF @ 25 V - 3.8W (Ta), 200W (Tc) -55°C ~ 175°C (TJ)
AUIRL1404STRL

AUIRL1404STRL

AUTOMOTIVE POWER MOSFET

International Rectifier
820 -

RFQ

AUIRL1404STRL

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 160A (Tc) 4.3V, 10V 4mOhm @ 95A, 10V 3V @ 250µA 140 nC @ 5 V ±20V 6600 pF @ 25 V - 3.8W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFF9221

IRFF9221

MOSFET N-CH 150V 2.5A TO205AF

International Rectifier
194 -

RFQ

IRFF9221

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 150 V 2.5A (Tc) - - - - - - - 20W - Through Hole
IRF9233

IRF9233

MOSFET P-CH 150V 5.5A TO204AE

International Rectifier
301 -

RFQ

IRF9233

Ficha técnica

Bulk HEXFET® Active P-Channel MOSFET (Metal Oxide) 150 V 5.5A - - - - - - Standard 75W - Through Hole
AUIRFS3206

AUIRFS3206

AUTOMOTIVE POWER MOSFET

International Rectifier
300 -

RFQ

AUIRFS3206

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 10V 3mOhm @ 75A, 10V 4V @ 150µA 170 nC @ 10 V ±20V 6540 pF @ 50 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRF3805S-7P

AUIRF3805S-7P

AUTOMOTIVE N CHANNEL

International Rectifier
150 -

RFQ

AUIRF3805S-7P

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 160A (Tc) 10V 2.6mOhm @ 140A, 10V 4V @ 250µA 200 nC @ 10 V ±20V 7820 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFAF52

IRFAF52

N-CHANNEL HERMETIC MOS HEXFET

International Rectifier
172 -

RFQ

IRFAF52

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IRF362

IRF362

N-CHANNEL HERMETIC MOS HEXFET

International Rectifier
160 -

RFQ

IRF362

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IRFH7914TRPBF

IRFH7914TRPBF

IRFH7914 - 12V-300V N-CHANNEL PO

International Rectifier
3,375 -

RFQ

IRFH7914TRPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 15A (Ta), 35A (Tc) 4.5V, 10V 8.7mOhm @ 14A, 10V 2.35V @ 25µA 12 nC @ 4.5 V ±20V 1160 pF @ 15 V - 3.1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
AUIRFL024NTR

AUIRFL024NTR

AUIRFL024 - 55V-60V N-CHANNEL AU

International Rectifier
2,500 -

RFQ

AUIRFL024NTR

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 2.8A (Ta) 10V 75mOhm @ 2.8A, 10V 4V @ 250µA 18.3 nC @ 10 V ±20V 400 pF @ 25 V - 1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFR1010ZPBF

IRFR1010ZPBF

IRFR1010 - 12V-300V N-CHANNEL PO

International Rectifier
647 -

RFQ

IRFR1010ZPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 42A (Tc) 10V 7.5mOhm @ 42A, 10V 4V @ 100µA 95 nC @ 10 V ±20V 2840 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFU7746PBF

IRFU7746PBF

TRENCH 40<-<100V

International Rectifier
3,000 -

RFQ

Bulk HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 75 V 56A (Tc) 6V, 10V 11.2mOhm @ 35A, 10V 3.7V @ 100µA 89 nC @ 10 V ±20V 3107 pF @ 25 V - 99W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF3709PBF

IRF3709PBF

IRF3709 - 12V-300V N-CHANNEL POW

International Rectifier
913 -

RFQ

IRF3709PBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 90A (Tc) 4.5V, 10V 9mOhm @ 15A, 10V 3V @ 250µA 41 nC @ 5 V ±20V 2672 pF @ 16 V - 3.1W (Ta), 120W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFH7934TRPBF

IRFH7934TRPBF

MOSFET N-CH 30V 24A/76A 8PQFN

International Rectifier
5,719 -

RFQ

IRFH7934TRPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 24A (Ta), 76A (Tc) 4.5V, 10V 3.5mOhm @ 24A, 10V 2.35V @ 50µA 30 nC @ 4.5 V ±20V 3100 pF @ 15 V - 3.1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
94-2354PBF

94-2354PBF

PLANAR MOSFET 40<-<100V

International Rectifier
5,500 -

RFQ

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 110A (Tc) - 8mOhm @ 62A, 10V 4V @ 250µA 146 nC @ 10 V - 3247 pF @ 25 V - - - Through Hole
AUIRFU8401

AUIRFU8401

MOSFET N-CH 40V 100A I-PAK

International Rectifier
8,142 -

RFQ

AUIRFU8401

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 10V 4.25mOhm @ 60A, 10V 3.9V @ 500µA 63 nC @ 10 V ±20V 2200 pF @ 25 V - 79W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF60B217

IRF60B217

TRENCH 40<-<100V

International Rectifier
4,342 -

RFQ

Bulk HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 60A (Tc) 6V, 10V 9mOhm @ 36A, 10V 3.7V @ 50µA 66 nC @ 10 V ±20V 2230 pF @ 25 V - 83W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFZ46ZSPBF

IRFZ46ZSPBF

IRFZ46 - 12V-300V N-CHANNEL POWE

International Rectifier
800 -

RFQ

Bulk HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 51A (Tc) 10V 13.6mOhm @ 31A, 10V 4V @ 250µA 46 nC @ 10 V ±20V 1460 pF @ 25 V - 82W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFR4292

AUIRFR4292

MOSFET N-CH 250V 9.3A DPAK

International Rectifier
4,435 -

RFQ

AUIRFR4292

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 250 V 9.3A (Tc) 10V 345mOhm @ 5.6A, 10V 5V @ 50µA 20 nC @ 10 V ±20V 705 pF @ 25 V - 100W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF122

IRF122

8.0A, 100V, 0.36 OHM, N-CHANNEL

International Rectifier
731 -

RFQ

IRF122

Ficha técnica

Bulk * Active - - - - - - - - - - - - -
Total 781 Record«Prev1234567...40Next»
1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Inicio

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Producto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Teléfono

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Usuario