Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
AUIRFR3504Z

AUIRFR3504Z

AUIRFR3504 - 20V-40V N-CHANNEL A

International Rectifier
6,989 -

RFQ

AUIRFR3504Z

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 42A (Tc) 10V 9mOhm @ 42A, 10V 4V @ 250µA 45 nC @ 10 V ±20V 1510 pF @ 25 V - 90W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFS4115-7P

AUIRFS4115-7P

AUIRFS4115 - 120V-300V N-CHANNEL

International Rectifier
323 -

RFQ

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 150 V 105A (Tc) 10V 11.8mOhm @ 63A, 10V 5V @ 250µA 110 nC @ 10 V ±20V 5320 pF @ 50 V - 380W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFZ44Z

AUIRFZ44Z

MOSFET N-CH 55V 51A TO220

International Rectifier
1,022 -

RFQ

AUIRFZ44Z

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 51A (Tc) 10V 13.9mOhm @ 31A, 10V 4V @ 250µA 43 nC @ 10 V ±20V 1420 pF @ 25 V - 80W (Tc) -55°C ~ 175°C (TJ) Through Hole
AUIRLR2703TRL

AUIRLR2703TRL

MOSFET N-CH 30V 20A DPAK

International Rectifier
2,599 -

RFQ

AUIRLR2703TRL

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 20A (Tc) - 45mOhm @ 14A, 10V 1V @ 250µA 15 nC @ 4.5 V - 450 pF @ 25 V - 45W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFS3806

AUIRFS3806

MOSFET N-CH 60V 43A D2PAK

International Rectifier
8,450 -

RFQ

AUIRFS3806

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 60 V 43A (Tc) 10V 15.8mOhm @ 25A, 10V 4V @ 50µA 30 nC @ 10 V ±20V 1150 pF @ 50 V - 71W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFSL8403

AUIRFSL8403

MOSFET N-CH 40V 123A TO262

International Rectifier
3,030 -

RFQ

AUIRFSL8403

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 123A (Tc) 10V 3.3mOhm @ 70A, 10V 3.9V @ 100µA 93 nC @ 10 V ±20V 3183 pF @ 25 V - 99W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRLU3705ZPBF

IRLU3705ZPBF

MOSFET N-CH 55V 42A IPAK

International Rectifier
1,275 -

RFQ

IRLU3705ZPBF

Ficha técnica

Bulk HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 42A (Tc) 4.5V, 10V 8mOhm @ 42A, 10V 3V @ 250µA 66 nC @ 5 V ±16V 2900 pF @ 25 V - 130W (Tc) -55°C ~ 175°C (TJ) Through Hole
AUIRFZ44VZS

AUIRFZ44VZS

MOSFET N-CH 60V 57A D2PAK

International Rectifier
4,055 -

RFQ

AUIRFZ44VZS

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 60 V 57A (Tc) 10V 12mOhm @ 34A, 10V 4V @ 250µA 65 nC @ 10 V ±20V 1690 pF @ 25 V - 92W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRF7734M2TR

AUIRF7734M2TR

MOSFET N-CH 40V 17A DIRECTFET M2

International Rectifier
4,800 -

RFQ

AUIRF7734M2TR

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 17A (Ta) 10V 4.9mOhm @ 43A, 10V 4V @ 100µA 72 nC @ 10 V ±20V 2545 pF @ 25 V - 2.5W (Ta), 46W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRF7732S2TR

AUIRF7732S2TR

MOSFET N-CH 40V 14A DIRECTFET SC

International Rectifier
3,106 -

RFQ

AUIRF7732S2TR

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 14A (Ta) 10V 6.95mOhm @ 33A, 10V 4V @ 50µA 45 nC @ 10 V ±20V 1700 pF @ 25 V - 2.5W (Ta), 41W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRL3705Z

AUIRL3705Z

MOSFET N-CH 55V 75A TO220AB

International Rectifier
750 -

RFQ

AUIRL3705Z

Ficha técnica

Bulk HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 4.5V, 10V 8mOhm @ 52A, 10V 3V @ 250µA 60 nC @ 5 V ±16V 2880 pF @ 25 V - 130W (Tc) -55°C ~ 175°C (TJ) Through Hole
AUIRFR2405TRL

AUIRFR2405TRL

AUIRFR2405 - MOSFET N-CHANNEL SI

International Rectifier
3,000 -

RFQ

AUIRFR2405TRL

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 30A (Tc) - 16mOhm @ 34A, 10V 4V @ 250µA 110 nC @ 10 V - 2430 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFF223

IRFF223

3.0A, 150V, 1.2 OHM, N-CHANNEL P

International Rectifier
422 -

RFQ

IRFF223

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
AUIRFR3504ZTRL

AUIRFR3504ZTRL

MOSFET N-CH 40V 42A DPAK

International Rectifier
1,929 -

RFQ

AUIRFR3504ZTRL

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 42A (Tc) - 9mOhm @ 42A, 10V 4V @ 250µA 45 nC @ 10 V - 1510 pF @ 25 V - 90W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRLR3705ZTRL

AUIRLR3705ZTRL

MOSFET N-CH 55V 42A DPAK

International Rectifier
362 -

RFQ

AUIRLR3705ZTRL

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 42A (Tc) - 8mOhm @ 42A, 10V 3V @ 250µA 66 nC @ 5 V - 2900 pF @ 25 V - 130W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF6726MTRPBFTR

IRF6726MTRPBFTR

IRF6726 - 12V-300V N-CHANNEL POW

International Rectifier
4,800 -

RFQ

IRF6726MTRPBFTR

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 32A (Ta), 180A (Tc) 4.5V, 10V 1.7mOhm @ 32A, 10V 2.35V @ 150µA 77 nC @ 4.5 V ±20V 6140 pF @ 15 V - 2.8W (Ta), 89W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IRF40DM229

IRF40DM229

MOSFET N-CH 40V 159A DIRECTFET

International Rectifier
9,196 -

RFQ

IRF40DM229

Ficha técnica

Bulk StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 40 V 159A (Tc) 6V, 10V 1.85mOhm @ 97A, 10V 3.9V @ 100µA 161 nC @ 10 V ±20V 5317 pF @ 25 V - 83W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRL7486MTRPBF

IRL7486MTRPBF

IRL7486M - 12V-300V N-CHANNEL PO

International Rectifier
4,920 -

RFQ

IRL7486MTRPBF

Ficha técnica

Bulk HEXFET®, StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 40 V 209A (Tc) 4.5V, 10V 1.25mOhm @ 123A, 10V 2.5V @ 150µA 111 nC @ 4.5 V ±20V 6904 pF @ 25 V - 104W (Tc) -55°C ~ 150°C (TJ) Surface Mount
AUIRL3705ZL

AUIRL3705ZL

MOSFET N-CH 55V 75A TO262

International Rectifier
9,271 -

RFQ

AUIRL3705ZL

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) - 8mOhm @ 52A, 10V 3V @ 250µA 60 nC @ 5 V - 2880 pF @ 25 V - 130W (Tc) -55°C ~ 175°C (TJ) Through Hole
AUIRFS8403

AUIRFS8403

MOSFET N-CH 40V 123A D2PAK

International Rectifier
7,413 -

RFQ

AUIRFS8403

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 123A (Tc) 10V 3.3mOhm @ 70A, 10V 3.9V @ 100µA 93 nC @ 10 V ±20V 3183 pF @ 25 V - 99W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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