Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
2SK3113-AZ

2SK3113-AZ

SMALL SIGNAL N-CHANNEL MOSFET

Renesas Electronics America Inc
1,828 -

RFQ

2SK3113-AZ

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
FQA6N80

FQA6N80

MOSFET N-CH 800V 6.3A TO3P

Fairchild Semiconductor
1,562 -

RFQ

FQA6N80

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 800 V 6.3A (Tc) 10V 1.95Ohm @ 3.15A, 10V 5V @ 250µA 31 nC @ 10 V ±30V 1500 pF @ 25 V - 185W (Tc) -55°C ~ 150°C (TJ) Through Hole
ISL9N302AP3

ISL9N302AP3

MOSFET N-CH 30V 75A TO220-3

Fairchild Semiconductor
1,344 -

RFQ

ISL9N302AP3

Ficha técnica

Tube UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 75A (Tc) 4.5V, 10V 2.5mOhm @ 75A, 10V 3V @ 250µA 300 nC @ 10 V ±20V 11000 pF @ 15 V - 345W (Tc) -55°C ~ 175°C (TJ) Through Hole
2SK3635-Z-AZ

2SK3635-Z-AZ

SMALL SIGNAL N-CHANNEL MOSFET

Renesas Electronics America Inc
1,293 -

RFQ

2SK3635-Z-AZ

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
2SK3433-ZJ-E1-AZ

2SK3433-ZJ-E1-AZ

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
800 -

RFQ

2SK3433-ZJ-E1-AZ

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IRFB7540PBF

IRFB7540PBF

MOSFET N-CH 60V 110A TO220

Infineon Technologies
560 -

RFQ

IRFB7540PBF

Ficha técnica

Tube HEXFET®, StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 60 V 110A (Tc) 6V, 10V 5.1mOhm @ 65A, 10V 3.7V @ 100µA 130 nC @ 10 V ±20V 4555 pF @ 25 V - 160W (Tc) -55°C ~ 175°C (TJ) Through Hole
AUIRLR3705Z

AUIRLR3705Z

AUTOMOTIVE HEXFET N-CHANNEL

International Rectifier
449 -

RFQ

AUIRLR3705Z

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 42A (Tc) 4.5V, 10V 8mOhm @ 42A, 10V 3V @ 250µA 66 nC @ 5 V ±16V 2900 pF @ 25 V - 130W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFS8407TRR

AUIRFS8407TRR

MOSFET N-CH 40V 195A D2PAK

International Rectifier
395 -

RFQ

AUIRFS8407TRR

Ficha técnica

Bulk Automotive, AEC-Q101, HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 195A (Tc) - 1.8mOhm @ 100A, 10V 4V @ 150µA 225 nC @ 10 V ±20V 7330 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) Surface Mount
HUF75344P3_NL

HUF75344P3_NL

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
312 -

RFQ

HUF75344P3_NL

Ficha técnica

Bulk UltraFET® Active N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 8mOhm @ 75A, 10V 4V @ 250µA 210 nC @ 20 V ±20V 3200 pF @ 25 V - 285W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXTU02N50D

IXTU02N50D

MOSFET N-CH 500V 200MA TO251

IXYS
2,077 -

RFQ

IXTU02N50D

Ficha técnica

Tube Depletion Active N-Channel MOSFET (Metal Oxide) 500 V 200mA (Tc) 10V 30Ohm @ 50mA, 0V 5V @ 25µA - ±20V 120 pF @ 25 V Depletion Mode 1.1W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHP12N50E-BE3

SIHP12N50E-BE3

N-CHANNEL 500V

Vishay Siliconix
1,000 -

RFQ

SIHP12N50E-BE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 10.5A (Tc) 10V 380mOhm @ 6A, 10V 4V @ 250µA 50 nC @ 10 V ±30V 886 pF @ 100 V - 114W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPP129N10NF2SAKMA1

IPP129N10NF2SAKMA1

TRENCH >=100V

Infineon Technologies
915 -

RFQ

IPP129N10NF2SAKMA1

Ficha técnica

Tube StrongIRFET™ 2 Active N-Channel MOSFET (Metal Oxide) 100 V 12A (Ta), 52A (Tc) 6V, 10V 12.9mOhm @ 30A, 10V 3.8V @ 30µA 28 nC @ 10 V ±20V 1300 pF @ 50 V - 3.8W (Ta), 71W (Tc) -55°C ~ 175°C (TJ) Through Hole
HUFA76437S3ST

HUFA76437S3ST

MOSFET N-CH 60V 71A D2PAK

Fairchild Semiconductor
9,600 -

RFQ

HUFA76437S3ST

Ficha técnica

Bulk UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 60 V 71A (Tc) 4.5V, 10V 14mOhm @ 71A, 10V 3V @ 250µA 71 nC @ 10 V ±16V 2230 pF @ 25 V - 155W (Tc) -55°C ~ 175°C (TJ) Surface Mount
UPA2760T1A-E1-AT

UPA2760T1A-E1-AT

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
9,000 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
UPA2727T1A-E1-AZ

UPA2727T1A-E1-AZ

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
6,000 -

RFQ

UPA2727T1A-E1-AZ

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
UPA2754GR-E1-AT

UPA2754GR-E1-AT

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
4,799 -

RFQ

UPA2754GR-E1-AT

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
RF1S540

RF1S540

28A, 100V, 0.077 OHM, N-CHANNEL

Harris Corporation
4,101 -

RFQ

RF1S540

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 100 V 28A (Tc) 10V 77mOhm @ 17A, 10V 4V @ 250µA 59 nC @ 10 V ±20V 1450 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFZ34PBF-BE3

IRFZ34PBF-BE3

MOSFET N-CH 60V 30A TO220AB

Vishay Siliconix
921 -

RFQ

IRFZ34PBF-BE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 30A (Tc) - 50mOhm @ 18A, 10V 4V @ 250µA 46 nC @ 10 V ±20V 1200 pF @ 25 V - 88W (Tc) -55°C ~ 175°C (TJ) Through Hole
RJK5026DPP-00#T2

RJK5026DPP-00#T2

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
2,724 -

RFQ

RJK5026DPP-00#T2

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IPP082N10NF2SAKMA1

IPP082N10NF2SAKMA1

TRENCH >=100V

Infineon Technologies
556 -

RFQ

IPP082N10NF2SAKMA1

Ficha técnica

Tube StrongIRFET™ 2 Active N-Channel MOSFET (Metal Oxide) 100 V 15A (Ta), 77A (Tc) 6V, 10V 8.2mOhm @ 50A, 10V 3.8V @ 46µA 42 nC @ 10 V ±20V 2000 pF @ 50 V - 3.8W (Ta), 100W (Tc) -55°C ~ 175°C (TJ) Through Hole
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1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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