Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
HUFA76633P3

HUFA76633P3

MOSFET N-CH 100V 39A TO220-3

Fairchild Semiconductor
1,474 -

RFQ

HUFA76633P3

Ficha técnica

Tube UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 100 V 39A (Tc) 4.5V, 10V 35mOhm @ 39A, 10V 3V @ 250µA 67 nC @ 10 V ±16V 1820 pF @ 25 V - 145W (Tc) -55°C ~ 175°C (TJ) Through Hole
RFP7N35

RFP7N35

N-CHANNEL POWER MOSFET

Harris Corporation
1,200 -

RFQ

RFP7N35

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 350 V 7A (Tc) 10V 750mOhm @ 3.5A, 10V 4V @ 1mA - ±20V 1600 pF @ 25 V - 75W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFF211

IRFF211

N-CHANNEL POWER MOSFET

Harris Corporation
1,043 -

RFQ

IRFF211

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 150 V 2.2A (Tc) 10V 1.5Ohm @ 1.25A, 10V 4V @ 250µA 7.5 nC @ 10 V ±20V 135 pF @ 25 V - 15W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPA082N10NF2SXKSA1

IPA082N10NF2SXKSA1

TRENCH >=100V PG-TO220-3

Infineon Technologies
500 -

RFQ

IPA082N10NF2SXKSA1

Ficha técnica

Tube StrongIRFET™ 2 Active N-Channel MOSFET (Metal Oxide) 100 V 46A (Tc) 6V, 10V 8.2mOhm @ 30A, 10V 3.8V @ 46µA 42 nC @ 10 V ±20V 2000 pF @ 50 V - 35W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFF221

IRFF221

N-CHANNEL POWER MOSFET

Harris Corporation
650 -

RFQ

IRFF221

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 150 V 3.5A (Tc) 10V 800mOhm @ 2A, 10V 4V @ 250µA 15 nC @ 10 V ±20V 450 pF @ 25 V - 20W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF624PBF-BE3

IRF624PBF-BE3

MOSFET N-CH 250V 4.4A TO220AB

Vishay Siliconix
1,000 -

RFQ

IRF624PBF-BE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 250 V 4.4A (Tc) - 1.1Ohm @ 2.6A, 10V 4V @ 250µA 14 nC @ 10 V ±20V 260 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPI65R280C6

IPI65R280C6

N-CHANNEL POWER MOSFET

Infineon Technologies
500 -

RFQ

IPI65R280C6

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IRL620PBF-BE3

IRL620PBF-BE3

MOSFET N-CH 200V 5.2A TO220AB

Vishay Siliconix
980 -

RFQ

IRL620PBF-BE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 200 V 5.2A (Tc) - 800mOhm @ 3.1A, 5V 2V @ 250µA 16 nC @ 5 V ±10V 360 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
SPI11N60S5

SPI11N60S5

N-CHANNEL POWER MOSFET

Infineon Technologies
368 -

RFQ

SPI11N60S5

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
HUFA76645S3ST

HUFA76645S3ST

MOSFET N-CH 100V 75A D2PAK

Fairchild Semiconductor
7,689 -

RFQ

HUFA76645S3ST

Ficha técnica

Bulk UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 100 V 75A (Tc) 4.5V, 10V 14mOhm @ 75A, 10V 3V @ 250µA 153 nC @ 10 V ±16V 4400 pF @ 25 V - 310W (Tc) -55°C ~ 175°C (TJ) Surface Mount
MTB4N50ET4

MTB4N50ET4

NFET D2PAK 500V 1.5R TR

onsemi
5,600 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
AUIRLU3114Z-701TRL

AUIRLU3114Z-701TRL

AUTOMOTIVE HEXFET N-CHANNEL

International Rectifier
2,992 -

RFQ

AUIRLU3114Z-701TRL

Ficha técnica

Bulk Automotive, AEC-Q101, HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 42A (Tc) 4.5V, 10V 4.9mOhm @ 42A, 10V 2.5V @ 100µA 56 nC @ 4.5 V ±16V 3810 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Through Hole
HAT1130RWS-E

HAT1130RWS-E

P-CHANNEL POWER MOSFET

Renesas Electronics America Inc
2,170 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
BUK753R8-80E,127

BUK753R8-80E,127

TRANSISTOR >30MHZ

NXP USA Inc.
1,749 -

RFQ

BUK753R8-80E,127

Ficha técnica

Tube Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 80 V 120A (Tc) 10V 4mOhm @ 25A, 10V 4V @ 1mA 169 nC @ 10 V ±20V 12030 pF @ 25 V - 349W (Tc) -55°C ~ 175°C (TJ) Through Hole
FQPF18N20V2

FQPF18N20V2

MOSFET N-CH 200V 18A TO220F

Fairchild Semiconductor
1,234 -

RFQ

FQPF18N20V2

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 18A (Tc) 10V 140mOhm @ 9A, 10V 5V @ 250µA 26 nC @ 10 V ±30V 1080 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) Through Hole
2SK3635-Z-E1-AZ

2SK3635-Z-E1-AZ

MOSFET N-CH 200V 8A TO252

Renesas Electronics America Inc
8,000 -

RFQ

2SK3635-Z-E1-AZ

Ficha técnica

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 200 V 8A (Tc) - 430mOhm @ 4A, 10V 4.5V @ 1mA 12 nC @ 10 V - 390 pF @ 10 V - - - Surface Mount
HAT1041T-EL-E

HAT1041T-EL-E

P-CHANNEL POWER MOSFET

Renesas Electronics America Inc
2,900 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
2SK3113-ZK-E2-AZ

2SK3113-ZK-E2-AZ

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
2,500 -

RFQ

2SK3113-ZK-E2-AZ

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IRF9Z34PBF-BE3

IRF9Z34PBF-BE3

MOSFET P-CH 60V 18A TO220AB

Vishay Siliconix
123 -

RFQ

IRF9Z34PBF-BE3

Ficha técnica

Tube - Active P-Channel MOSFET (Metal Oxide) 60 V 18A (Tc) - 140mOhm @ 11A, 10V 4V @ 250µA 34 nC @ 10 V ±20V 1100 pF @ 25 V - 88W (Tc) -55°C ~ 175°C (TJ) Through Hole
FDP3205

FDP3205

MOSFET N-CH 55V 100A TO220-3

Fairchild Semiconductor
2,301 -

RFQ

FDP3205

Ficha técnica

Tube PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 100A (Tc) 10V 7.5mOhm @ 59A, 10V 5.5V @ 250µA 120 nC @ 10 V ±20V 7730 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
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1500+ Promedio diario de RFQ
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20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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