Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
AUIRFR4104

AUIRFR4104

AUTOMOTIVE HEXFET N CHANNEL

International Rectifier
8,742 -

RFQ

AUIRFR4104

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 42A (Tc) 10V 5.5mOhm @ 42A, 10V 4V @ 250µA 89 nC @ 10 V ±20V 2950 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
HUF75339G3

HUF75339G3

MOSFET N-CH 55V 75A TO247-3

Fairchild Semiconductor
3,009 -

RFQ

HUF75339G3

Ficha técnica

Tube UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 12mOhm @ 75A, 10V 4V @ 250µA 130 nC @ 20 V ±20V 2000 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
RFP17N06L

RFP17N06L

N-CHANNEL, MOSFET

Harris Corporation
2,275 -

RFQ

RFP17N06L

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 60 V 17A (Tc) 4V, 5V 130mOhm @ 17A, 5V 2V @ 1mA 45 nC @ 30 V ±10V - - 60W (Tc) -55°C ~ 150°C (TJ) Through Hole
RFD16N03LSM

RFD16N03LSM

N-CHANNEL POWER MOSFET

Harris Corporation
2,057 -

RFQ

RFD16N03LSM

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 30 V 16A - - - - - - - - - Surface Mount
SPP12N50C3

SPP12N50C3

N-CHANNEL POWER MOSFET

Infineon Technologies
1,250 -

RFQ

SPP12N50C3

Ficha técnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 500 V 11.6A (Tc) 10V 380mOhm @ 7A, 10V 3.9V @ 500µA 49 nC @ 10 V ±20V 1200 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQAF44N10

FQAF44N10

MOSFET N-CH 100V 33A TO3PF

Fairchild Semiconductor
1,044 -

RFQ

FQAF44N10

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 33A (Tc) 10V 39mOhm @ 16.5A, 10V 4V @ 250µA 62 nC @ 10 V ±25V 1800 pF @ 25 V - 85W (Tc) -55°C ~ 175°C (TJ) Through Hole
SP001017058

SP001017058

IPP60R380P6 - 600V N-CHANNEL

Infineon Technologies
1,000 -

RFQ

SP001017058

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
SIHP6N80AE-GE3

SIHP6N80AE-GE3

MOSFET N-CH 800V 5A TO220AB

Vishay Siliconix
980 -

RFQ

SIHP6N80AE-GE3

Ficha técnica

Tube E Active N-Channel MOSFET (Metal Oxide) 800 V 5A (Tc) - 950mOhm @ 2A, 10V 4V @ 250µA 22.5 nC @ 10 V ±30V 422 pF @ 100 V - 62.5W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQAF9P25

FQAF9P25

MOSFET P-CH 250V 7.1A TO3PF

Fairchild Semiconductor
590 -

RFQ

FQAF9P25

Ficha técnica

Tube QFET® Obsolete P-Channel MOSFET (Metal Oxide) 250 V 7.1A (Tc) 10V 620mOhm @ 3.55A, 10V 5V @ 250µA 38 nC @ 10 V ±30V 1180 pF @ 25 V - 70W (Tc) -55°C ~ 150°C (TJ) Through Hole
SPI12N50C3IN

SPI12N50C3IN

N-CHANNEL POWER MOSFET

Infineon Technologies
480 -

RFQ

SPI12N50C3IN

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
SPI16N50C3IN

SPI16N50C3IN

N-CHANNEL POWER MOSFET

Infineon Technologies
448 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
FDP75N08

FDP75N08

MOSFET N-CH 75V 75A TO220-3

Fairchild Semiconductor
365 -

RFQ

FDP75N08

Ficha técnica

Tube UniFET™ Obsolete N-Channel MOSFET (Metal Oxide) 75 V 75A (Tc) 10V 11mOhm @ 37.5A, 10V 4V @ 250µA 104 nC @ 10 V ±20V 4468 pF @ 25 V - 131W (Tc) -55°C ~ 150°C (TJ) Through Hole
SPI16N50C3

SPI16N50C3

N-CHANNEL POWER MOSFET

Infineon Technologies
300 -

RFQ

SPI16N50C3

Ficha técnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 500 V 16A (Tc) 10V 280mOhm @ 10A, 10V 3.9V @ 675µA 66 nC @ 10 V ±20V 1600 pF @ 25 V - 160W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRLZ24PBF-BE3

IRLZ24PBF-BE3

MOSFET N-CH 60V 17A TO220AB

Vishay Siliconix
923 -

RFQ

IRLZ24PBF-BE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 17A (Tc) - 100mOhm @ 10A, 5V 2V @ 250µA 18 nC @ 5 V ±10V 870 pF @ 25 V - 60W (Tc) -55°C ~ 175°C (TJ) Through Hole
HUFA76445S3S

HUFA76445S3S

MOSFET N-CH 60V 75A D2PAK

Fairchild Semiconductor
500 -

RFQ

HUFA76445S3S

Ficha técnica

Tube UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 60 V 75A (Tc) 4.5V, 10V 6.5mOhm @ 75A, 10V 3V @ 250µA 150 nC @ 10 V ±16V 4965 pF @ 25 V - 310W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRL1404PBF

IRL1404PBF

HEXFET POWER MOSFET

International Rectifier
481 -

RFQ

IRL1404PBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 160A (Tc) 4.3V, 10V 4mOhm @ 95A, 10V 3V @ 250µA 140 nC @ 5 V ±20V 6590 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
RFP10P12

RFP10P12

P-CHANNEL POWER MOSFET

Harris Corporation
300 -

RFQ

RFP10P12

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 120 V 10A (Tc) 10V 500mOhm @ 5A, 10V 4V @ 1mA - ±20V 1700 pF @ 25 V - 75W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQB8N60CFTM

FQB8N60CFTM

MOSFET N-CH 600V 6.26A D2PAK

Fairchild Semiconductor
6,964 -

RFQ

FQB8N60CFTM

Ficha técnica

Bulk FRFET® Obsolete N-Channel MOSFET (Metal Oxide) 600 V 6.26A (Tc) 10V 1.5Ohm @ 3.13A, 10V 4V @ 250µA 36 nC @ 10 V ±30V 1255 pF @ 25 V - 147W (Tc) -55°C ~ 150°C (TJ) Surface Mount
TMOSP12034

TMOSP12034

N-CHANNEL POWER MOSFET

Infineon Technologies
6,270 -

RFQ

TMOSP12034

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IRF820APBF-BE3

IRF820APBF-BE3

MOSFET N-CH 500V 2.5A TO220AB

Vishay Siliconix
714 -

RFQ

IRF820APBF-BE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 2.5A (Tc) - 3Ohm @ 1.5A, 10V 4.5V @ 250µA 17 nC @ 10 V ±30V 340 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
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1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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