Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SIHB5N80AE-GE3

SIHB5N80AE-GE3

E SERIES POWER MOSFET D2PAK (TO-

Vishay Siliconix
890 -

RFQ

Tube E Active N-Channel MOSFET (Metal Oxide) 800 V 4.4A (Tc) 10V 1.35Ohm @ 1.5A, 10V 4V @ 250µA 16.5 nC @ 10 V ±30V 321 pF @ 100 V - 62.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF9Z10PBF-BE3

IRF9Z10PBF-BE3

MOSFET P-CH 60V 6.7A TO220AB

Vishay Siliconix
862 -

RFQ

IRF9Z10PBF-BE3

Ficha técnica

Tube - Active P-Channel MOSFET (Metal Oxide) 60 V 6.7A (Tc) - 500mOhm @ 4A, 10V 4V @ 250µA 12 nC @ 10 V ±20V 270 pF @ 25 V - 43W (Tc) -55°C ~ 175°C (TJ) Through Hole
FDS5692Z

FDS5692Z

MOSFET N-CH 50V 5.8A 8SOIC

Fairchild Semiconductor
8,231 -

RFQ

FDS5692Z

Ficha técnica

Bulk UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 50 V 5.8A (Ta) 4.5V, 10V 24mOhm @ 5.8A, 10V 3V @ 250µA 25 nC @ 10 V ±20V 1025 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
FX20ASJ-03F-T13#X3

FX20ASJ-03F-T13#X3

P-CHANNEL POWER MOSFET

Renesas Electronics America Inc
5,876 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
UPA2714GR-E1-A

UPA2714GR-E1-A

P-CHANNEL SWITCHING POWER MOSFET

Renesas Electronics America Inc
5,000 -

RFQ

UPA2714GR-E1-A

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
RF1S50N06LE

RF1S50N06LE

N-CHANNEL POWER MOSFET

Harris Corporation
4,042 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
FDS7296N3

FDS7296N3

MOSFET N-CH 30V 15A 8SO

Fairchild Semiconductor
2,499 -

RFQ

FDS7296N3

Ficha técnica

Bulk PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 15A (Ta) 4.5V, 10V 8mOhm @ 15A, 10V 3V @ 250µA 32 nC @ 10 V ±20V 1540 pF @ 15 V - 3W (Ta) -55°C ~ 150°C (TJ) Surface Mount
HUFA76445P3

HUFA76445P3

MOSFET N-CH 60V 75A TO220-3

Fairchild Semiconductor
518 -

RFQ

HUFA76445P3

Ficha técnica

Tube UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 60 V 75A (Tc) 4.5V, 10V 6.5mOhm @ 75A, 10V 3V @ 250µA 150 nC @ 10 V ±16V 4965 pF @ 25 V - 310W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFS654B

IRFS654B

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
9,857 -

RFQ

IRFS654B

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 250 V 21A (Tj) 10V 140mOhm @ 10.5A, 10V 4V @ 250µA 123 nC @ 10 V ±30V 3400 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDU2572

FDU2572

MOSFET N-CH 150V 4A/29A IPAK

Fairchild Semiconductor
8,957 -

RFQ

FDU2572

Ficha técnica

Tube PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 150 V 4A (Ta), 29A (Tc) 6V, 10V 54mOhm @ 9A, 10V 4V @ 250µA 34 nC @ 10 V ±20V 1770 pF @ 25 V - 135W (Tc) -55°C ~ 175°C (TJ) Through Hole
BSB012N03LX3G

BSB012N03LX3G

N-CHANNEL POWER MOSFET

Infineon Technologies
5,766 -

RFQ

BSB012N03LX3G

Ficha técnica

Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 39A (Ta), 180A (Tc) 4.5V, 10V 1.2mOhm @ 30A, 10V 2.2V @ 250µA 169 nC @ 10 V ±20V 16900 pF @ 15 V - 2.8W (Ta), 89W (Tc) -40°C ~ 150°C (TJ) Surface Mount
R8002ANJGTL

R8002ANJGTL

NCH 800V 2A POWER MOSFET : R8002

Rohm Semiconductor
1,000 -

RFQ

R8002ANJGTL

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 800 V 2A (Tc) 10V 4.3Ohm @ 1A, 10V 5V @ 1mA 13 nC @ 10 V ±30V 250 pF @ 25 V - 62W (Tc) 150°C (TJ) Surface Mount
RF1S630SM9A

RF1S630SM9A

N-CHANNEL POWER MOSFET

Harris Corporation
4,000 -

RFQ

RF1S630SM9A

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 200 V 6A (Tc) 10V 400mOhm @ 5A, 10V 4V @ 250µA 30 nC @ 10 V ±20V 600 pF @ 25 V - 75W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF6713STRPBF

IRF6713STRPBF

MOSFET N-CH 25V 22A/95A DIRECTFT

International Rectifier
2,745 -

RFQ

IRF6713STRPBF

Ficha técnica

Bulk DirectFET™ Active N-Channel MOSFET (Metal Oxide) 25 V 22A (Ta), 95A (Tc) - 3mOhm @ 22A, 10V 2.4V @ 50µA 32 nC @ 4.5 V ±20V 2880 pF @ 13 V - 2.2W (Ta), 42W (Tc) -40°C ~ 150°C (TJ) Surface Mount
SPI07N60C3

SPI07N60C3

N-CHANNEL POWER MOSFET

Infineon Technologies
2,730 -

RFQ

SPI07N60C3

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
RFG45N06

RFG45N06

N-CHANNEL POWER MOSFET

Harris Corporation
2,175 -

RFQ

RFG45N06

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 60 V 45A (Tc) 10V 28mOhm @ 45A, 10V 4V @ 250µA 150 nC @ 20 V ±20V 2050 pF @ 25 V - 131W (Tc) -55°C ~ 175°C (TJ) Through Hole
NDB4060L

NDB4060L

MOSFET N-CH 60V 15A D2PAK

Fairchild Semiconductor
1,600 -

RFQ

NDB4060L

Ficha técnica

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 15A (Tc) 5V, 10V 80mOhm @ 15A, 10V 2V @ 250µA 17 nC @ 5 V ±16V 600 pF @ 25 V - 50W (Tc) -65°C ~ 175°C (TJ) Surface Mount
IRF9630PBF-BE3

IRF9630PBF-BE3

MOSFET P-CH 200V 6.5A TO220AB

Vishay Siliconix
940 -

RFQ

IRF9630PBF-BE3

Ficha técnica

Tube - Active P-Channel MOSFET (Metal Oxide) 200 V 6.5A (Tc) - 800mOhm @ 3.9A, 10V 4V @ 250µA 29 nC @ 10 V ±20V 700 pF @ 25 V - 74W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFZ24PBF-BE3

IRFZ24PBF-BE3

MOSFET N-CH 60V 17A TO220AB

Vishay Siliconix
208 -

RFQ

IRFZ24PBF-BE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 17A (Tc) - 100mOhm @ 10A, 10V 4V @ 250µA 25 nC @ 10 V ±20V 640 pF @ 25 V - 60W (Tc) -55°C ~ 175°C (TJ) Through Hole
HUF75343S3

HUF75343S3

MOSFET N-CH 55V 75A I2PAK

Fairchild Semiconductor
540 -

RFQ

HUF75343S3

Ficha técnica

Tube UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 9mOhm @ 75A, 10V 4V @ 250µA 205 nC @ 20 V ±20V 3000 pF @ 25 V - 270W (Tc) -55°C ~ 175°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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