Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
UPA2718AGR-E1-AT

UPA2718AGR-E1-AT

MOSFET P-CH 30V 13A 8PSOP

Renesas Electronics America Inc
7,500 -

RFQ

Bulk - Obsolete P-Channel MOSFET (Metal Oxide) 30 V 13A (Ta) - 9mOhm @ 6.5A, 10V 2.5V @ 1mA 67 nC @ 10 V - 2810 pF @ 10 V - - - Surface Mount
UPA2742GR-E1-AT

UPA2742GR-E1-AT

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
7,500 -

RFQ

UPA2742GR-E1-AT

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
UPA2718AGR-E2-AT

UPA2718AGR-E2-AT

MOSFET P-CH 30V 13A 8PSOP

Renesas Electronics America Inc
5,000 -

RFQ

Bulk - Obsolete P-Channel MOSFET (Metal Oxide) 30 V 13A (Ta) - 9mOhm @ 6.5A, 10V 2.5V @ 1mA 67 nC @ 10 V - 2810 pF @ 10 V - - - Surface Mount
UPA2718GR-E1-AT

UPA2718GR-E1-AT

P-CHANNEL POWER MOSFET

Renesas Electronics America Inc
5,000 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
RJK0204DPA-00#J53

RJK0204DPA-00#J53

MOSFET N-CH 25V 50A 8WPAK

Renesas Electronics America Inc
3,000 -

RFQ

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 25 V 50A (Ta) - 2.7mOhm @ 25A, 10V 2.5V @ 1mA 22 nC @ 4.5 V - 4240 pF @ 10 V - - 150°C (TJ) Surface Mount
UPA2719GR(1)-E1-AT

UPA2719GR(1)-E1-AT

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
2,500 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
RJK0204DPA-WS#J53

RJK0204DPA-WS#J53

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
1,950 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
FDS6689S

FDS6689S

MOSFET N-CH 30V 16A 8SOIC

Fairchild Semiconductor
1,941 -

RFQ

FDS6689S

Ficha técnica

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 16A (Ta) 4.5V, 10V 5.4mOhm @ 16A, 10V 3V @ 1mA 78 nC @ 10 V ±20V 3290 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
HUFA75344S3S

HUFA75344S3S

MOSFET N-CH 55V 75A D2PAK

Fairchild Semiconductor
1,880 -

RFQ

HUFA75344S3S

Ficha técnica

Tube UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 8mOhm @ 75A, 10V 4V @ 250µA 210 nC @ 20 V ±20V 3200 pF @ 25 V - 285W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDMS8848NZ

FDMS8848NZ

MOSFET N-CH 40V 22.8A/49A 8PQFN

Fairchild Semiconductor
993 -

RFQ

FDMS8848NZ

Ficha técnica

Bulk PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 22.8A (Ta), 49A (Tc) 4.5V, 10V 3.1mOhm @ 22.8A, 10V 3V @ 250µA 152 nC @ 10 V ±20V 8075 pF @ 20 V - 2.5W (Ta), 104W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FQPF6N60

FQPF6N60

MOSFET N-CH 600V 3.6A TO220F

Fairchild Semiconductor
887 -

RFQ

FQPF6N60

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 600 V 3.6A (Tc) 10V 1.5Ohm @ 1.8A, 10V 5V @ 250µA 25 nC @ 10 V ±30V 1000 pF @ 25 V - 44W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF841

IRF841

N-CHANNEL POWER MOSFET

Harris Corporation
800 -

RFQ

IRF841

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 450 V 8A (Tc) 10V 850mOhm @ 4.4A, 10V 4V @ 250µA 63 nC @ 10 V ±20V 1225 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
HUF75344S3

HUF75344S3

75A, 55V, 0.008 OHM, N-CHANNEL U

Harris Corporation
678 -

RFQ

HUF75344S3

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 8mOhm @ 75A, 10V 4V @ 250µA 210 nC @ 20 V ±20V 3200 pF @ 25 V - 155W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF741

IRF741

N-CHANNEL POWER MOSFET

Harris Corporation
520 -

RFQ

IRF741

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 350 V 10A (Tc) 10V 550mOhm @ 5.2A, 10V 4V @ 250µA 63 nC @ 10 V ±20V 1250 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
2SJ128-AZ

2SJ128-AZ

POWER MOSFET

Renesas Electronics America Inc
448 -

RFQ

2SJ128-AZ

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IRFBE20PBF-BE3

IRFBE20PBF-BE3

MOSFET N-CH 800V 1.8A TO220AB

Vishay Siliconix
985 -

RFQ

IRFBE20PBF-BE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 800 V 1.8A (Tc) - 6.5Ohm @ 1.1A, 10V 4V @ 250µA 38 nC @ 10 V ±20V 530 pF @ 25 V - 54W (Tc) -55°C ~ 150°C (TJ) Through Hole
ISL9N322AS3ST

ISL9N322AS3ST

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
8,800 -

RFQ

ISL9N322AS3ST

Ficha técnica

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 35A (Tc) 4.5V, 10V 22mOhm @ 35A, 10V 3V @ 250µA 27 nC @ 10 V ±20V 970 pF @ 15 V - 50W (Ta) -55°C ~ 175°C (TJ) Surface Mount
BUK9515-100A127

BUK9515-100A127

N-CHANNEL POWER MOSFET

NXP USA Inc.
8,000 -

RFQ

BUK9515-100A127

Ficha técnica

Bulk TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 75A (Tc) 4.5V, 10V 14.4mOhm @ 25A, 10V 2V @ 1mA - ±10V 8600 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) Through Hole
FQPF6N70

FQPF6N70

MOSFET N-CH 700V 3.5A TO220F

Fairchild Semiconductor
5,064 -

RFQ

FQPF6N70

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 700 V 3.5A (Tc) 10V 1.5Ohm @ 1.75A, 10V 5V @ 250µA 40 nC @ 10 V ±30V 1400 pF @ 25 V - 48W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDD6682_NL

FDD6682_NL

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
2,748 -

RFQ

FDD6682_NL

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 30 V 75A (Ta) 4.5V, 10V 6.2mOhm @ 17A, 10V 3V @ 250µA 31 nC @ 5 V ±20V 2400 pF @ 15 V - 1.6W (Ta) -55°C ~ 175°C (TJ) Surface Mount
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1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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